2SD1336A Todos los transistores

 

2SD1336A . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: 2SD1336A

Material: Si

Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 40 W

Tensión colector-base (Vcb): 250 V

Corriente del colector DC máxima (Ic): 6 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Ganancia de corriente contínua (hfe): 3000

Empaquetado / Estuche: TO218

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2SD1336A Datasheet (PDF)

3.1. 2sd1336.pdf Size:258K _inchange_semiconductor

2SD1336A
2SD1336A

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Darlington Power Transistor 2SD1336 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 100V(Min) ·High DC Current Gain : hFE= 1500(Min) @ IC= 5A, VCE= 4V ·High Speed Switching APPLICATIONS ·High power switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25?) SYMBOL PARAMETER VALUE UNIT VCBO Colle

4.1. 2sd1330 e.pdf Size:47K _panasonic

2SD1336A
2SD1336A

Transistor 2SD1330 Silicon NPN epitaxial planer type For low-voltage output amplification Unit: mm For muting 6.9 0.1 2.5 0.1 For DC-DC converter 1.5 1.5 R0.9 1.0 R0.9 Features Low collector to emitter saturation voltage VCE(sat). Low ON resistance Ron. High foward current transfer ratio hFE. 0.85 M type package allowing easy automatic and manual insertion as 0.55 0.1 0.45 0.0

4.2. 2sd1330.pdf Size:84K _panasonic

2SD1336A
2SD1336A

Transistors 2SD1330 Silicon NPN epitaxial planar type For low-voltage output amplification Unit: mm For muting 2.50.1 6.90.1 For DC-DC converter (1.0) (1.5) (1.5) Features Low collector-emitter saturation voltage VCE(sat) R 0.9 Low ON resistance Ron R 0.7 High forward current transfer ratio hFE M type package allowing easy automatic and manual insertion as well as stan

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