2SD1347R . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 2SD1347R
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 1 W
Tensión colector-base (Vcb): 60 V
Tensión colector-emisor (Vce): 50 V
Tensión emisor-base (Veb): 6 V
Corriente del colector DC máxima (Ic): 3 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Producto de corriente -- ganancia — ancho de banda (ft): 150 MHz
Capacitancia de salida (Cc): 25 pF
Ganancia de corriente contínua (hfe): 100
Empaquetado / Estuche: TO92
Búsqueda de reemplazo de transistor bipolar 2SD1347R
2SD1347R Datasheet (PDF)
3.1. 2sd1347.pdf 
Size:110K _sanyo
Ordering number:1244C PNP/NPN Epitaxial Planar Silicon Transistors 2SB985/2SD1347 Large-Current Driving Applications Applcations Package Dimensions · Power supplies, relay drivers, lamp drivers, electrical unit:mm equipment. 2006A [2SB985/2SD1347] Features · Adoption of FBET, MBIT processes. · Low saturation voltage. · Large current capacity and wide ASO. EIAJ : SC-51 B :
4.1. 2sd1348.pdf Size:129K _sanyo
Ordering number:1245C PNP/NPN Epitaxial Planar Silicon Darlington Transistors 2SB986/2SD1348 50V/4A Switching Applications Applications Package Dimensions · Power supplies, relay drivers, lamp drivers, electrical unit:mm equipment. 2009B [2SB986/2SD1348] Features · Adoption of FBET and MBIT processes. · Low saturation voltage. · High current capacity and wide ASO. JEDEC :
4.2. 2sd1341p.pdf Size:61K _sanyo
4.3. 2sd1349.pdf Size:796K _shindengen
4.4. 2sd1342.pdf Size:206K _inchange_semiconductor
isc Silicon NPN Power Transistor 2SD1342 DESCRIPTION ·High Breakdown Voltage- : V = 1500V (Min) CBO ·High Switching Speed ·Built-in Damper Diode ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for horizontal output applications. ABSOLUTE MAXIMUM RATINGS(T =25℃) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage
4.5. 2sd1345.pdf Size:210K _inchange_semiconductor
isc Silicon NPN Power Transistor 2SD1345 DESCRIPTION ·High Switching Time ·Low Collector Saturation Voltage : V = 0.4V(Max)@I = 4A CE(sat) C ·Wide Area of Safe Operation ·Complement to Type 2SB983 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Inverters, converters ·Controllers for DC motor, pulse motor ·Switching power sup
4.6. 2sd1348.pdf Size:213K _inchange_semiconductor
isc Silicon NPN Power Transistor 2SD1348 DESCRIPTION ·High Collector Current-I = 4.0A C ·Low Saturation Voltage - : V = 0.5V(Max)@ I = 2A, I = 0.1A CE(sat) C B ·Good Linearity of h FE ·Complement to Type 2SB986 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for power supplies, relay drivers, lamp drivers, electrical
4.7. 2sd1344.pdf Size:205K _inchange_semiconductor
isc Silicon NPN Power Transistor 2SD1344 DESCRIPTION ·High Breakdown Voltage- : V = 1500V (Min) CBO ·High Switching Speed ·Built-in Damper Diode ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for horizontal output applications. ABSOLUTE MAXIMUM RATINGS(T =25℃) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage
4.8. 2sd1340.pdf Size:205K _inchange_semiconductor
isc Silicon NPN Power Transistor 2SD1340 DESCRIPTION ·High Breakdown Voltage- : V = 1500V (Min) CBO ·High Switching Speed ·Built-in Damper Diode ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for horizontal output applications. ABSOLUTE MAXIMUM RATINGS(T =25℃) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage
Otros transistores... 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , 9012 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
