2SD1355R . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SD1355 DESCRIPTION Low Collector Saturation Voltage V = 2.0V(Max)@ I = 4A CE(sat) C Collector-Emitter Breakdown Voltage- V = 100V (Min) (BR)CEO Complement to Type 2SB995 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power amplifier applications. Recommended fo

Transistor 2SD1350, 2SD1350A Silicon NPN triple diffusion planer type For high breakdown voltage switching Unit mm Features High collector to base voltage VCBO. 6.9 0.1 2.5 0.1 1.5 High collector to emitter voltage VCEO. 1.5 R0.9 1.0 R0.9 Large collector power dissipation PC. Low collector to emitter saturation voltage VCE(sat). M type package allowing easy automatic and man

Transistor 2SD1350, 2SD1350A Silicon NPN triple diffusion planer type For high breakdown voltage switching Unit mm Features High collector to base voltage VCBO. 6.9 0.1 2.5 0.1 1.5 High collector to emitter voltage VCEO. 1.5 R0.9 1.0 R0.9 Large collector power dissipation PC. Low collector to emitter saturation voltage VCE(sat). M type package allowing easy automatic and man

isc Silicon NPN Power Transistor 2SD1351 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 60V(Min) (BR)CEO Collector Power Dissipation- P = 30W@ T = 25 C C Low Collector Saturation Voltage- V = 1.0V(Max)@ (I = 2A, I = 0.2A) CE(sat) C B Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for general purpose

INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor 2SD1357 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 100V(Min) (BR)CEO Collector-Emitter Saturation Voltage- V = 1.5V(Max) @I = 3A CE(sat) C High DC Current Gain h = 2000(Min) @ I = 3A, V = 3V FE C CE Complement to Type 2SB997 Minimum Lot-to-Lot variations for robust device performance and r

INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor 2SD1358 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 80V(Min) (BR)CEO Collector-Emitter Saturation Voltage- V = 1.5V(Max) @I = 3A CE(sat) C High DC Current Gain h = 2000(Min) @ I = 3A, V = 3V FE C CE Complement to Type 2SB998 Minimum Lot-to-Lot variations for robust device performance and re

isc Silicon NPN Power Transistor 2SD1352 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 80(Min) (BR)CEO Good Linearity of h FE Complement to Type 2SB989 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for general purpose application ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collect