2SD1357 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

INCHANGE Semiconductorisc Silicon NPN Darlington Power Transistor 2SD1357DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 100V(Min)(BR)CEOCollector-Emitter Saturation Voltage-: V = 1.5V(Max) @I = 3ACE(sat) CHigh DC Current Gain: h = 2000(Min) @ I = 3A, V = 3VFE C CEComplement to Type 2SB997Minimum Lot-to-Lot variations for robust deviceperformance and r

Transistor2SD1350, 2SD1350ASilicon NPN triple diffusion planer typeFor high breakdown voltage switchingUnit: mmFeaturesHigh collector to base voltage VCBO.6.9 0.1 2.5 0.11.5High collector to emitter voltage VCEO.1.5 R0.9 1.0 R0.9Large collector power dissipation PC.Low collector to emitter saturation voltage VCE(sat).M type package allowing easy automatic and man

Transistor2SD1350, 2SD1350ASilicon NPN triple diffusion planer typeFor high breakdown voltage switchingUnit: mmFeaturesHigh collector to base voltage VCBO.6.9 0.1 2.5 0.11.5High collector to emitter voltage VCEO.1.5 R0.9 1.0 R0.9Large collector power dissipation PC.Low collector to emitter saturation voltage VCE(sat).M type package allowing easy automatic and man

isc Silicon NPN Power Transistor 2SD1351DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 60V(Min)(BR)CEOCollector Power Dissipation-: P = 30W@ T = 25C CLow Collector Saturation Voltage-: V = 1.0V(Max)@ (I = 2A, I = 0.2A)CE(sat) C BMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for general purpose

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SD1355DESCRIPTIONLow Collector Saturation Voltage: V = 2.0V(Max)@ I = 4ACE(sat) CCollector-Emitter Breakdown Voltage-: V = 100V (Min)(BR)CEOComplement to Type 2SB995Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower amplifier applications.Recommended fo

INCHANGE Semiconductorisc Silicon NPN Darlington Power Transistor 2SD1358DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 80V(Min)(BR)CEOCollector-Emitter Saturation Voltage-: V = 1.5V(Max) @I = 3ACE(sat) CHigh DC Current Gain: h = 2000(Min) @ I = 3A, V = 3VFE C CEComplement to Type 2SB998Minimum Lot-to-Lot variations for robust deviceperformance and re

isc Silicon NPN Power Transistor 2SD1352DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 80(Min)(BR)CEOGood Linearity of hFEComplement to Type 2SB989Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for general purpose applicationABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collect