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2SD1357 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: 2SD1357

Material: Si

Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 40 W

Tensión colector-base (Vcb): 100 V

Tensión colector-emisor (Vce): 100 V

Tensión emisor-base (Veb): 5 V

Corriente del colector DC máxima (Ic): 7 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Ganancia de corriente contínua (hfe): 4000

Empaquetado / Estuche: TO220

Búsqueda de reemplazo de transistor bipolar 2SD1357

 

2SD1357 Datasheet (PDF)

4.1. 2sd1350.pdf Size:39K _panasonic

2SD1357
2SD1357

Transistor 2SD1350, 2SD1350A Silicon NPN triple diffusion planer type For high breakdown voltage switching Unit: mm Features High collector to base voltage VCBO. 6.9 0.1 2.5 0.1 1.5 High collector to emitter voltage VCEO. 1.5 R0.9 1.0 R0.9 Large collector power dissipation PC. Low collector to emitter saturation voltage VCE(sat). M type package allowing easy automatic and manual i

4.2. 2sd1350 e.pdf Size:43K _panasonic

2SD1357
2SD1357

Transistor 2SD1350, 2SD1350A Silicon NPN triple diffusion planer type For high breakdown voltage switching Unit: mm Features High collector to base voltage VCBO. 6.9 0.1 2.5 0.1 1.5 High collector to emitter voltage VCEO. 1.5 R0.9 1.0 R0.9 Large collector power dissipation PC. Low collector to emitter saturation voltage VCE(sat). M type package allowing easy automatic and manual i

 4.3. 2sd1352.pdf Size:140K _inchange_semiconductor

2SD1357
2SD1357

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SD1352 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 80(Min) ·Good Linearity of hFE ·Complement to Type 2SB989 APPLICATIONS ·Designed for general purpose application ABSOLUTE MAXIMUM RATINGS(Ta=25?) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 80 V VCEO Collector-

4.4. 2sd1351.pdf Size:64K _inchange_semiconductor

2SD1357
2SD1357

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD1351 DESCRIPTION · ·With TO-220C package ·Complement to type 2SB988 ·Low collector saturation voltage APPLICATIONS ·For general purpose application PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base 3 Emitter Absolute maximum ratings (Ta=25?) SYMBOL PARAMETER CONDITION

Otros transistores... 2N3187 , 2N3188 , 2N3189 , 2N319 , 2N3190 , 2N3191 , 2N3192 , 2N3193 , TIP122 , 2N3195 , 2N3196 , 2N3197 , 2N3198 , 2N3199 , 2N32 , 2N320 , 2N3200 .

 
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