2SD1376 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

2SD1376(K) Silicon NPN Epitaxial Application Low frequency power amplifier complementary pair with 2SB1012(K) Outline TO-126 MOD 2 3 1. Emitter ID 2. Collector 3. Base 1 6 k 0.5 k 2 3 (Typ) (Typ) 1 2SD1376(K) Absolute Maximum Ratings (Ta = 25 C) Item Symbol Rating Unit Collector to base voltage VCBO 120 V Collector to emitter voltage VCEO 120 V Emitter to base vol

isc Silicon NPN Darlington Power Transistor 2SD1376 DESCRIPTION High DC Current Gain- h = 2000(Min)@ I = 1A FE C Collector-Emitter Breakdown Voltage- V = 120V(Min) (BR)CEO Low Collector-Emitter Saturation Voltage- Complement to Type 2SB1012 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for low frequency powe

INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor 2SD1370 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 100V(Min) (BR)CEO Collector-Emitter Saturation Voltage- V = 1.5V(Max) @I = 3A CE(sat) C High DC Current Gain h = 1000(Min) @ I = 3A, V = 3V FE C CE Fast Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliab

isc Silicon NPN Power Transistor 2SD1371 DESCRIPTION High Voltage High Speed Switching High Power Dissipation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for switching mode power supply and electronic ballast applications. ABSOLUTE MAXIMUM RATINGS (T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage

INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SD1373 DESCRIPTION High Collector-Base Voltage- V = 300V(Min.) CBO Good Linearity of h FE High Speed Switching Wide Area of Safe Operation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in high-voltage,high-speed,power switching regulators and ge

INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor 2SD1377 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 120V(Min) (BR)CEO High DC Current Gain h = 2000(Min) @I = 4A FE C Low Saturation Voltage 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for general-purpose amp

isc Silicon NPN Power Transistor 2SD1378 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 80V(Min) (BR)CEO Low Saturation Voltage - V = 0.4V(Max)@ I = 0.5A CE(sat) C Complement to Type 2SB1007 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for low frequency power amplifier applications. ABSOLUTE MAXIMUM RAT

INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SD1374 DESCRIPTION High Collector-Base Voltage- V = 300V(Min.) CBO Good Linearity of h FE High Speed Switching Wide Area of Safe Operation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in high-voltage,high-speed,power switching regulators and ge

INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SD1375 DESCRIPTION High Collector-Base Voltage- V = 300V(Min.) CBO Good Linearity of h FE High Speed Switching Wide Area of Safe Operation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in high-voltage,high-speed,power switching regulators and ge

INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SD1372 DESCRIPTION High Collector-Base Voltage- V = 300V(Min.) CBO High Speed Switching Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in high-voltage,high-speed,power switching regulators,converters,inverters,motor control system. ABSOLUTE MAXIMUM RAT