2SD1376 Todos los transistores

 

2SD1376 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: 2SD1376

Material: Si

Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 20 W

Tensión colector-base (Vcb): 120 V

Tensión colector-emisor (Vce): 120 V

Tensión emisor-base (Veb): 7 V

Corriente del colector DC máxima (Ic): 1.5 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Ganancia de corriente contínua (hfe): 15000

Empaquetado / Estuche: TO126

Búsqueda de reemplazo de transistor bipolar 2SD1376

 

2SD1376 Datasheet (PDF)

0.1. 2sd1376.pdf Size:33K _hitachi

2SD1376
2SD1376

2SD1376(K)Silicon NPN EpitaxialApplicationLow frequency power amplifier complementary pair with 2SB1012(K)OutlineTO-126 MOD231. EmitterID2. Collector3. Base16 k 0.5 k23(Typ) (Typ)12SD1376(K)Absolute Maximum Ratings (Ta = 25C)Item Symbol Rating UnitCollector to base voltage VCBO 120 VCollector to emitter voltage VCEO 120 VEmitter to base vol

0.2. 2sd1376.pdf Size:207K _inchange_semiconductor

2SD1376
2SD1376

isc Silicon NPN Darlington Power Transistor 2SD1376DESCRIPTIONHigh DC Current Gain-: h = 2000(Min)@ I = 1AFE CCollector-Emitter Breakdown Voltage-: V = 120V(Min)(BR)CEOLow Collector-Emitter Saturation Voltage-Complement to Type 2SB1012Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for low frequency powe

 8.1. 2sd1370.pdf Size:188K _inchange_semiconductor

2SD1376
2SD1376

INCHANGE Semiconductorisc Silicon NPN Darlington Power Transistor 2SD1370DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 100V(Min)(BR)CEOCollector-Emitter Saturation Voltage-: V = 1.5V(Max) @I = 3ACE(sat) CHigh DC Current Gain: h = 1000(Min) @ I = 3A, V = 3VFE C CEFast Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliab

8.2. 2sd1371.pdf Size:208K _inchange_semiconductor

2SD1376
2SD1376

isc Silicon NPN Power Transistor 2SD1371DESCRIPTIONHigh VoltageHigh Speed SwitchingHigh Power DissipationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for switching mode power supply and electronicballast applications.ABSOLUTE MAXIMUM RATINGS (T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltage

 8.3. 2sd1372.pdf Size:183K _inchange_semiconductor

2SD1376
2SD1376

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SD1372DESCRIPTIONHigh Collector-Base Voltage-: V = 300V(Min.)CBOHigh Speed SwitchingMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in high-voltage,high-speed,power switchingregulators,converters,inverters,motor control system.ABSOLUTE MAXIMUM RAT

8.4. 2sd1373.pdf Size:241K _inchange_semiconductor

2SD1376
2SD1376

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SD1373DESCRIPTIONHigh Collector-Base Voltage-: V = 300V(Min.)CBOGood Linearity of hFEHigh Speed SwitchingWide Area of Safe OperationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in high-voltage,high-speed,power switchingregulators and ge

 8.5. 2sd1378.pdf Size:212K _inchange_semiconductor

2SD1376
2SD1376

isc Silicon NPN Power Transistor 2SD1378DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 80V(Min)(BR)CEOLow Saturation Voltage -: V = 0.4V(Max)@ I = 0.5ACE(sat) CComplement to Type 2SB1007Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for low frequency power amplifier applications.ABSOLUTE MAXIMUM RAT

8.6. 2sd1377.pdf Size:200K _inchange_semiconductor

2SD1376
2SD1376

INCHANGE Semiconductorisc Silicon NPN Darlington Power Transistor 2SD1377DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 120V(Min)(BR)CEOHigh DC Current Gain: h = 2000(Min) @I = 4AFE CLow Saturation Voltage100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for general-purpose amp

8.7. 2sd1375.pdf Size:194K _inchange_semiconductor

2SD1376
2SD1376

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SD1375DESCRIPTIONHigh Collector-Base Voltage-: V = 300V(Min.)CBOGood Linearity of hFEHigh Speed SwitchingWide Area of Safe OperationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in high-voltage,high-speed,power switchingregulators and ge

8.8. 2sd1374.pdf Size:231K _inchange_semiconductor

2SD1376
2SD1376

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SD1374DESCRIPTIONHigh Collector-Base Voltage-: V = 300V(Min.)CBOGood Linearity of hFEHigh Speed SwitchingWide Area of Safe OperationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in high-voltage,high-speed,power switchingregulators and ge

Otros transistores... 2SC619 , 2SC62 , 2SC620 , 2SC620M , 2SC621 , 2SC621A , 2SC621M , 2SC622 , 2N5401 , 2SC623 , 2SC624 , 2SC626 , 2SC627 , 2SC627F , 2SC628 , 2SC629 , 2SC63 .

 

 
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