2SD1376 Todos los transistores

 

2SD1376 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: 2SD1376
   Material: Si
   Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 20 W
   Tensión colector-base (Vcb): 120 V
   Tensión colector-emisor (Vce): 120 V
   Tensión emisor-base (Veb): 7 V
   Corriente del colector DC máxima (Ic): 1.5 A
   Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Ganancia de corriente contínua (hfe): 15000
   Paquete / Cubierta: TO126
 

 Búsqueda de reemplazo de 2SD1376

   - Selección ⓘ de transistores por parámetros

 

2SD1376 Datasheet (PDF)

 ..1. Size:33K  hitachi
2sd1376.pdf pdf_icon

2SD1376

2SD1376(K)Silicon NPN EpitaxialApplicationLow frequency power amplifier complementary pair with 2SB1012(K)OutlineTO-126 MOD231. EmitterID2. Collector3. Base16 k 0.5 k23(Typ) (Typ)12SD1376(K)Absolute Maximum Ratings (Ta = 25C)Item Symbol Rating UnitCollector to base voltage VCBO 120 VCollector to emitter voltage VCEO 120 VEmitter to base vol

 ..2. Size:207K  inchange semiconductor
2sd1376.pdf pdf_icon

2SD1376

isc Silicon NPN Darlington Power Transistor 2SD1376DESCRIPTIONHigh DC Current Gain-: h = 2000(Min)@ I = 1AFE CCollector-Emitter Breakdown Voltage-: V = 120V(Min)(BR)CEOLow Collector-Emitter Saturation Voltage-Complement to Type 2SB1012Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for low frequency powe

 8.1. Size:188K  inchange semiconductor
2sd1370.pdf pdf_icon

2SD1376

INCHANGE Semiconductorisc Silicon NPN Darlington Power Transistor 2SD1370DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 100V(Min)(BR)CEOCollector-Emitter Saturation Voltage-: V = 1.5V(Max) @I = 3ACE(sat) CHigh DC Current Gain: h = 1000(Min) @ I = 3A, V = 3VFE C CEFast Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliab

 8.2. Size:208K  inchange semiconductor
2sd1371.pdf pdf_icon

2SD1376

isc Silicon NPN Power Transistor 2SD1371DESCRIPTIONHigh VoltageHigh Speed SwitchingHigh Power DissipationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for switching mode power supply and electronicballast applications.ABSOLUTE MAXIMUM RATINGS (T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltage

Otros transistores... 2SD1369 , 2SD137 , 2SD1370 , 2SD1371 , 2SD1372 , 2SD1373 , 2SD1374 , 2SD1375 , BC327 , 2SD1376K , 2SD1377 , 2SD1377K , 2SD1378 , 2SD1379 , 2SD138 , 2SD1380 , 2SD1381 .

History: 2SD1273AF

 

 
Back to Top

 


 
.