2SD1380 Todos los transistores

 

2SD1380 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: 2SD1380
   Material: Si
   Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 10 W
   Tensión colector-base (Vcb): 40 V
   Corriente del colector DC máxima (Ic): 2 A
   Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Transición de frecuencia (ft): 100 MHz
   Ganancia de corriente contínua (hfe): 60
   Paquete / Cubierta: TO126

 Búsqueda de reemplazo de transistor bipolar 2SD1380

 

2SD1380 Datasheet (PDF)

 ..1. Size:108K  rohm
2sd1380.pdf

2SD1380

 ..2. Size:212K  inchange semiconductor
2sd1380.pdf

2SD1380
2SD1380

isc Silicon NPN Power Transistor 2SD1380DESCRIPTIONHigh Collector Current -I = 2ACCollector-Emitter Breakdown Voltage-: V = 32V(Min)(BR)CEOGood Linearity of hFELow Saturation VoltageComplement to Type 2SB1009Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for low frequency power amplifier application

 8.1. Size:52K  rohm
2sb852k 2sa830s 2sd1383k 2sc1645s.pdf

2SD1380
2SD1380

2SB852K / 2SA830STransistorsTransistors2SD1383K / 2SC1645S(96-118-B20)(96-205-D20)280Appendix NotesNo technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD.The contents described herein are subject to change without notice. The specifications for theproduct described in this document a

 8.2. Size:1369K  rohm
2sd1383k.pdf

2SD1380
2SD1380

2SD1383KDatasheetHigh-gain Amplifer Transistor (32V, 0.3A)lOutlinel SOT-346 Parameter Value SC-59 VCES32VIC0.3AR 4kSMT3lFeatures lInner circuitl l1)Darlington connection for high DC current gain.2)Built-in 4k resistor between base and emitter.3)Complements the 2SB852K.lApplicationlHIGH GAIN AMPLIFIER

 8.3. Size:89K  rohm
2sd1381f.pdf

2SD1380
2SD1380

2SD1898 / 2SD1733 / 2SD1768S / 2SD1863 / 2SD1381FTransistorsPower Transistor (80V, 1A)2SD1898 / 2SD1733 / 2SD1768S / 2SD1863 /2SD1381F Features External dimensions (Units : mm)1) High VCEO, VCEO=80V2SD18982) High IC, IC=1A (DC)4.5+0.2-0.13) Good hFE linearity 1.5+0.21.60.1 -0.14) Low VCE (sat)5) Complements the 2SB1260 /(1) (2) (3)0.4+0.1-0.05 2SB1241 / 2SB

 8.4. Size:41K  panasonic
2sd1385 e.pdf

2SD1380
2SD1380

Transistor2SD1385Silicon NPN triple diffusion planer typeFor low-frequency output amplificationUnit: mm6.9 0.1 2.5 0.11.51.5 R0.9 1.0FeaturesR0.9High collector to base voltage VCBO.High collector to emitter voltage VCEO.Large collector power dissipation PC.Low collector to emitter saturation voltage VCE(sat).0.85M type package allowing easy automatic and manual

 8.5. Size:37K  panasonic
2sd1385.pdf

2SD1380
2SD1380

Transistor2SD1385Silicon NPN triple diffusion planer typeFor low-frequency output amplificationUnit: mm6.9 0.1 2.5 0.11.51.5 R0.9 1.0FeaturesR0.9High collector to base voltage VCBO.High collector to emitter voltage VCEO.Large collector power dissipation PC.Low collector to emitter saturation voltage VCE(sat).0.85M type package allowing easy automatic and manual

 8.6. Size:201K  inchange semiconductor
2sd1386.pdf

2SD1380
2SD1380

INCHANGE Semiconductorisc Silicon NPN Darlington Power Transistor 2SD1386DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 140V(Min)(BR)CEOHigh DC Current Gain: h = 2000(Min) @I = 4AFE CLow Saturation Voltage100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for power amplifier and

Otros transistores... 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

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