2SD139. Equivalente. Reemplazo. Todos los transistores. Hoja de especificaciones. Principales características

2SD139 Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: 2SD139

Material: Si

Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 30 W

Tensión colector-base (Vcb): 300 V

Tensión colector-emisor (Vce): 300 V

Tensión emisor-base (Veb): 3 V

Corriente del colector DC máxima (Ic): 1 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Ganancia de corriente contínua (hFE): 30

Encapsulados: TO66

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2SD139 datasheet

0.1. Size:43K sanyo
2sd1399.pdf pdf_icon

0.2. Size:80K sanyo
2sd1395.pdf pdf_icon

0.3. Size:42K sanyo
2sd1396.pdf pdf_icon

0.4. Size:69K no
2sd1392.pdf pdf_icon

0.5. Size:26K wingshing
2sd1397.pdf pdf_icon

NPN TRIPLE DIFFUSED PLANAR SILICON TRANSISTOR 2SD1397 COLOR TV HORIZONTAL OUTPUT APPLICATIONS(Damper Diode BUILT IN) High Collector-Base Voltage(VCBO=1500V) SC-65 High Speed Switching ABSOLUTE MAXIMUM RATINGS (T =25oC) A Characteristic Symbol Rating Unit Collector-Base Voltage VCBO 1500 V Collector-Emitter Voltage VCEO 1500 V Emitter-Base voltage VEBO 6 V Collector Current

0.6. Size:204K inchange semiconductor
2sd1393.pdf pdf_icon

INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor 2SD1393 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 50V(Min) (BR)CEO High DC Current Gain h = 1000(Min) @I = 0.8A FE C Low Saturation Voltage 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for general purpose am

0.7. Size:215K inchange semiconductor
2sd1398.pdf pdf_icon

isc Silicon NPN Power Transistor 2SD1398 DESCRIPTION High Breakdown Voltage High Switching Speed Built-in damper diode Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in horizontal deflection circuits of colour TV receivers. ABSOLUTE MAXIMUM RATINGS (T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base V

0.8. Size:215K inchange semiconductor
2sd1399.pdf pdf_icon

isc Silicon NPN Power Transistor 2SD1399 DESCRIPTION High Breakdown Voltage V = 1500V (Min) CBO High Switching Speed Built-in damper diode Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for horizontal output applications. ABSOLUTE MAXIMUM RATINGS (T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage

0.9. Size:204K inchange semiconductor
2sd1394.pdf pdf_icon

INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor 2SD1394 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 50V(Min) (BR)CEO High DC Current Gain h = 2000(Min) @I = 1.5A FE C Low Saturation Voltage Fast Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for general purpose amp

0.10. Size:207K inchange semiconductor
2sd1390.pdf pdf_icon

isc Silicon NPN Power Transistor 2SD1390 DESCRIPTION High Breakdown Voltage- V = 1500V (Min) CBO High Reliability Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for line-operated horizontal deflection output applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage 150

0.11. Size:205K inchange semiconductor
2sd1395.pdf pdf_icon

INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor 2SD1395 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 50V(Min) (BR)CEO High DC Current Gain h = 1000(Min) @I = 2.5A FE C Low Saturation Voltage Fast Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for general purpose amp

0.12. Size:214K inchange semiconductor
2sd1397.pdf pdf_icon

isc Silicon NPN Power Transistor 2SD1397 DESCRIPTION High Breakdown Voltage- V = 1500V (Min) CBO High Switching Speed Built-in Damper Diode Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for horizontal output applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage

0.13. Size:212K inchange semiconductor
2sd1391.pdf pdf_icon

isc Silicon NPN Power Transistor 2SD1391 DESCRIPTION High Breakdown Voltage- V = 1500V (Min) CBO High Reliability Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for line-operated horizontal deflection output applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage 150

0.14. Size:214K inchange semiconductor
2sd1396.pdf pdf_icon

isc Silicon NPN Power Transistor 2SD1396 DESCRIPTION High Breakdown Voltage- V = 1500V (Min) CBO High Switching Speed Built-in Damper Diode Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for horizontal output applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage

Otros transistores... 2SD1383WA , 2SD1383WB , 2SD1384 , 2SD1385 , 2SD1386 , 2SD1387 , 2SD1388 , 2SD1389 , 2SC2625 , 2SD1390 , 2SD1391 , 2SD1392 , 2SD1393 , 2SD1394 , 2SD1395 , 2SD1396 , 2SD1397 .