2SD1401 Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 2SD1401
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 80 W
Tensión colector-base (Vcb): 1500 V
Tensión colector-emisor (Vce): 800 V
Tensión emisor-base (Veb): 7 V
Corriente del colector DC máxima (Ic): 3.5 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (fT): 3 MHz
Ganancia de corriente contínua (hFE): 8
Encapsulados: TO247
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2SD1401 datasheet
8.1. Size:105K toshiba
2sd1408.pdf 
This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer
8.3. Size:131K toshiba
2sd1407a.pdf
2SD1407A TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SD1407A Industrial Applications Power Amplifier Applications Unit mm High breakdown voltage VCEO = 100 V Low collector saturation voltage VCE (sat) = 2.0 V (max) Complementary to 2SB1016A Absolute Maximum Ratings (Ta = 25 C) Characteristics Symbol Rating Unit Collector-base voltage VCBO 100 V Col
8.5. Size:81K wingshing
2sd1403.pdf
Silicon Diffused Power Transistor 2SD1403 GENERAL DESCRIPTION Highvoltage,high-speed switching npn transistors in a plastic envelope with integrated efficiency diode,prim- arily for use in horizontal deflection circuites of colour television receivers MT-100 QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS TYP MAX UNIT Collector-emitter voltage peak value V = 0V BE V - 1500 V CES
8.6. Size:68K wingshing
2sd1402.pdf
NPN TRIPLE DIFFUSED 2SD1402 PLANAR SILICON TRANSISTOR COLOR TV HORIZONTAL OUTPUT APPLICATIONS (No Damper Diode) SC-65 High Collector-Base Voltage(VCBO=1500V) High Speed Switching ABSOLUTE MAXIMUM RATINGS (T =25 ) A Characteristic Symbol Rating Unit Collector-Base Voltage VCBO 1500 V Collector-Emitter Voltage VCEO 800 V Emitter-Base voltage VEBO 6 V Collecto
8.8. Size:71K wingshing
2sd1409.pdf
2SD1409 SILICON NPN DARLINGTON TRANSISTOR GENERAL DESCRIPTION Darington transistor are designed for use as general purpose amplifiers, switching and motor control applications. QUICK REFERENCE DATA TO-220F SYMBOL PARAMETER CONDITIONS MIN MAX UNIT Collector-emitter voltage peak value VBE = 0V VCESM - 600 V Collector-emitter voltage (open base) VCEO - 400 V Collector current (DC) I
8.9. Size:105K jmnic
2sd1409.pdf
Product Specification www.jmnic.com Silicon NPN Power Transistors 2SD1409 DESCRIPTION With TO-220F package High DC current gain Monolithic construction with built-in base-emitter shunt resistor APPLICATIONS Igniter applications High volitage switching applications PINNING PIN DESCRIPTION 1 Base 2 Collector 3 Emitter Fig.1 simplified outline (TO-220F) and sym
8.10. Size:212K inchange semiconductor
2sd1400.pdf
isc Silicon NPN Power Transistor 2SD1400 DESCRIPTION High Breakdown Voltage- V = 1500V (Min) CBO High Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for color TV horizontal output applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage 1500 V CBO V C
8.11. Size:208K inchange semiconductor
2sd1404.pdf
isc Silicon NPN Power Transistor 2SD1404 DESCRIPTION High Collector Current Capability High Collector Power Dissipation Capability Built-in Damper Diode Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS B/W TV horizontal deflection output applications. High voltage switching applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a
8.12. Size:217K inchange semiconductor
2sd1403.pdf
isc Silicon NPN Power Transistor 2SD1403 DESCRIPTION High Breakdown Voltage High Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in horizontal deflection circuits of colour TV receivers. ABSOLUTE MAXIMUM RATINGS (T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage 1500 V CBO V Col
8.13. Size:211K inchange semiconductor
2sd1408.pdf
isc Silicon NPN Power Transistor 2SD1408 DESCRIPTION Low Collector Saturation Voltage V = 1.5V(Max)@ I = 3A CE(sat) C Collector-Emitter Breakdown Voltage- V = 80V (Min) (BR)CEO Complement to Type 2SB1017 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for power amplifier applications. ABSOLUTE MAXIMUM RATINGS(T
8.14. Size:217K inchange semiconductor
2sd1402.pdf
isc Silicon NPN Power Transistor 2SD1402 DESCRIPTION High Breakdown Voltage- V = 1500V (Min) CBO High Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for color TV horizontal output applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage 1500 V CBO V C
8.15. Size:210K inchange semiconductor
2sd1407.pdf
isc Silicon NPN Power Transistor 2SD1407 DESCRIPTION Low Collector Saturation Voltage V = 2.0V(Max)@ I = 4A CE(sat) C Collector-Emitter Breakdown Voltage- V = 100V (Min) (BR)CEO Complement to Type 2SB1016 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for power amplifier applications. ABSOLUTE MAXIMUM RATINGS(T
8.16. Size:191K inchange semiconductor
2sd1409a.pdf
INCHANGE Semiconductor isc Product Specification isc Silicon NPN Darlington Power Transistor 2SD1409A DESCRIPTION High collector-emitter breakdown voltage- V = 400V(Min) (BR)CEO High DC current Gain h = 600(Min) @ I = 2A, V = 2V FE C CE Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Igniter applications High voltage swi
8.17. Size:187K inchange semiconductor
2sd1405.pdf
INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SD1405 DESCRIPTION High DC Current Gain h = 200(Min) @I = 0.5A FE C Low Collector Saturation Voltage V = 1.0V(Max.)@ I = 1A CE(sat) C Collector Power Dissipation of 25W@ T =25 C Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for audio frequency power
8.18. Size:216K inchange semiconductor
2sd1406.pdf
isc Silicon NPN Power Transistor 2SD1406 DESCRIPTION Low Collector Saturation Voltage V = 1.0V(Max)@ I = 3A CE(sat) C Collector-Emitter Breakdown Voltage- V = 60V (Min) (BR)CEO Complement to Type 2SB1015 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for audio frequency power amplifier applications. ABSOLUTE MA
8.19. Size:213K inchange semiconductor
2sd1409.pdf
isc Silicon NPN Darlington Power Transistor 2SD1409 DESCRIPTION High Collector-Emitter Breakdown Voltage- V = 400V(Min) (BR)CEO High DC Current Gain h = 600(Min) @ I = 2A, V = 2V FE C CE Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Igniter applications High voltage switching applications ABSOLUTE MAXIMUM RATINGS(T =25
Otros transistores... 2SD1394, 2SD1395, 2SD1396, 2SD1397, 2SD1398, 2SD1399, 2SD14, 2SD1400, D209L, 2SD1401BL, 2SD1401GR, 2SD1402, 2SD1402O, 2SD1403, 2SD1404, 2SD1405, 2SD1405BL
