2SD1423
. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 2SD1423
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.3
W
Tensión colector-base (Vcb): 30
V
Tensión colector-emisor (Vce): 25
V
Tensión emisor-base (Veb): 7
V
Corriente del colector DC máxima (Ic): 0.5
A
Temperatura operativa máxima (Tj): 150
°C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 200(typ)
MHz
Capacitancia de salida (Cc): 6
pF
Ganancia de corriente contínua (hfe): 85
Paquete / Cubierta:
SC72
Búsqueda de reemplazo de transistor bipolar 2SD1423
2SD1423
Datasheet (PDF)
..1. Size:41K panasonic
2sd1423 e.pdf 
Transistor2SD1423, 2SD1423ASilicon NPN epitaxial planer typeFor low-frequency amplificationUnit: mmComplementary to 2SB1030 and 2SB1030A4.0 0.2FeaturesOptimum for high-density mounting.Allowing supply with the radial taping.Absolute Maximum Ratings (Ta=25C)Parameter Symbol Ratings UnitmarkingCollector to 2SD1423 30VCBO V 1 2 3base voltage 2SD1423A 60Collector
..2. Size:37K panasonic
2sd1423.pdf
Transistor2SD1423, 2SD1423ASilicon NPN epitaxial planer typeFor low-frequency amplificationUnit: mmComplementary to 2SB1030 and 2SB1030A4.0 0.2FeaturesOptimum for high-density mounting.Allowing supply with the radial taping.Absolute Maximum Ratings (Ta=25C)Parameter Symbol Ratings UnitmarkingCollector to 2SD1423 30VCBO V 1 2 3base voltage 2SD1423A 60Collector
8.1. Size:49K toshiba
2sd1429.pdf
This Material Copyrighted By Its Respective Manufacturer
8.2. Size:116K toshiba
2sd1428.pdf
This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer
8.3. Size:37K panasonic
2sd1424.pdf
Transistor2SD1424Silicon NPN epitaxial planer typeFor low-frequency amplificationUnit: mm4.0 0.2FeaturesOptimum for high-density mounting.Allowing supply with the radial taping.High foward current transfer ratio hFE.markingAbsolute Maximum Ratings (Ta=25C)1 2 3Parameter Symbol Ratings UnitCollector to base voltage VCBO 50 V1.27 1.27Collector to emitter voltag
8.4. Size:41K panasonic
2sd1424 e.pdf
Transistor2SD1424Silicon NPN epitaxial planer typeFor low-frequency amplificationUnit: mm4.0 0.2FeaturesOptimum for high-density mounting.Allowing supply with the radial taping.High foward current transfer ratio hFE.markingAbsolute Maximum Ratings (Ta=25C)1 2 3Parameter Symbol Ratings UnitCollector to base voltage VCBO 50 V1.27 1.27Collector to emitter voltag
8.5. Size:30K hitachi
2sd1420.pdf
2SD1420Silicon NPN EpitaxialApplicationLow frequency power amplifierOutlineUPAK12341. Base2. Collector3. Emitter4. Collector (Flange)2SD1420Absolute Maximum Ratings (Ta = 25C)Item Symbol Ratings UnitCollector to base voltage VCBO 180 VCollector to emitter voltage VCEO 120 VEmitter to base voltage VEBO 5VCollector current IC 1.5 ACollector peak curren
8.6. Size:30K hitachi
2sd1421.pdf
2SD1421Silicon NPN EpitaxialApplicationLow frequency power amplifierOutlineUPAK12341. Base2. Collector3. Emitter4. Collector (Flange)2SD1421Absolute Maximum Ratings (Ta = 25C)Item Symbol Ratings UnitCollector to base voltage VCBO 180 VCollector to emitter voltage VCEO 160 VEmitter to base voltage VEBO 5VCollector current IC 1.5 ACollector peak curren
8.9. Size:881K kexin
2sd1420.pdf
SMD Type TransistorsNPN Transistors2SD1420SOT-89Unit:mm1.70 0.1 Features Collector Current Capability IC=1.5A Collector Emitter Voltage VCEO=120V0.42 0.10.46 0.11.Base2.Collector3.Emitter Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 180 Collector - Emitter Voltage VCEO 120 V Emitter - Base Voltage
8.10. Size:897K kexin
2sd1421.pdf
SMD Type TransistorsNPN Transistors2SD1421SOT-89Unit:mm1.70 0.1 Features Collector Current Capability IC=1.5A Collector Emitter Voltage VCEO=160V Low frequency power amplifier0.42 0.10.46 0.11.Base2.Collector3.Emitter Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 180 Collector - Emitter Voltage
8.11. Size:191K inchange semiconductor
2sd1429.pdf
INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SD1429DESCRIPTIONHigh Breakdown Voltage-: V = 1500V (Min)CBOHigh Switching SpeedLow Saturation Voltage100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSColor TV horizontal deflection output applicationsABSOLUTE MAXIMUM RATINGS(T =25)a
8.12. Size:215K inchange semiconductor
2sd1427.pdf
isc Silicon NPN Power Transistor 2SD1427DESCRIPTIONHigh Breakdown VoltageHigh Switching SpeedBuilt-in damper diodeLow Saturation VoltageMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in large screen color deflection circuits.ABSOLUTE MAXIMUM RATINGS (T =25)aSYMBOL PARAMETER VALUE UNITV Collec
8.13. Size:215K inchange semiconductor
2sd1426.pdf
isc Silicon NPN Power Transistor 2SD1426DESCRIPTIONHigh Breakdown VoltageHigh Switching SpeedBuilt-in damper diodeLow Saturation VoltageMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in horizontal deflection circuits ofcolour TV receivers.ABSOLUTE MAXIMUM RATINGS (T =25)aSYMBOL PARAMETER VALU
8.14. Size:189K inchange semiconductor
2sd1428.pdf
INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SD1428DESCRIPTIONHigh Breakdown Voltage-: V = 1500V (Min)CBOHigh Switching SpeedLow Saturation VoltageBuilt-in Damper Diode100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSColor TV horizontal deflection output applicationsABSOLUTE MAX
8.15. Size:189K inchange semiconductor
2sd1425.pdf
INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SD1425DESCRIPTIONHigh Breakdown Voltage-: V = 1500V (Min)CBOHigh Switching SpeedLow Saturation VoltageBuilt-in Damper Diode100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSColor TV horizontal deflection output applicationsABSOLUTE MAX
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