2SD1437 Todos los transistores

 ..1. Size:69K  wingshing
 2sd1437.pdf

2SD1437 NPN EPITAXIAL SILICON TRANSISTOR LOW FREQUENCY POWER AMPLIFIER TO-220 Complement to 2SB1033 ABSOLUTE MAXIMUM RATINGS (T =25 ) A Characteristic Symbol Rating Unit Collector-Base Voltage VCBO 80 V Collector-Emitter Voltage VCEO 60 V Emitter-Base voltage VEBO 5 V Collector Current (DC) IC 3 A Collector Dissipation (Tc=25 PC 40 W Juncti

 ..2. Size:209K  inchange semiconductor
 2sd1437.pdf

isc Silicon NPN Power Transistor 2SD1437 DESCRIPTION Collector-Emitter Breakdown Voltage V = 60V(Min) (BR)CEO Complement to Type 2SB1033 Low Collector Saturation Voltage Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for low frequency power amplification. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE

 8.1. Size:100K  toshiba
 2sd1438.pdf

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 8.2. Size:49K  toshiba
 2sd1430.pdf

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 8.3. Size:100K  panasonic
 2sd1439.pdf

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 8.4. Size:320K  hitachi
 2sd1435k.pdf

 8.5. Size:34K  hitachi
 2sd1436.pdf

2SD1436(K) Silicon NPN Triple Diffused Application Power switching complementary pair with 2SB1032(K) Outline TO-3P 2 1 1. Base 2. Collector (Flange) 3. Emitter 1.5 k 130 (Typ) (Typ) 1 3 2 3 2SD1436(K) Absolute Maximum Ratings (Ta = 25 C) Item Symbol Rating Unit Collector to base voltage VCBO 120 V Collector to emitter voltage VCEO 120 V Emitter to base voltage VE

 8.6. Size:28K  wingshing
 2sd1432.pdf

NPN TRIPLE DIFFUSED 2SD1432 PLANAR SILICON TRANSISTOR COLOR TV HORIZONTAL OUTPUT APPLICATIONS(No Damper Diode) High Collector-Base Voltage(VCBO=1500V) 2-16D3A High Speed Switching ABSOLUTE MAXIMUM RATINGS (T =25oC) A Characteristic Symbol Rating Unit Collector-Base Voltage VCBO 1500 V Collector-Emitter Voltage VCEO 600 V Emitter-Base voltage VEBO 6 V Collector Current (DC) IC

 8.7. Size:28K  wingshing
 2sd1431.pdf

NPN TRIPLE DIFFUSED 2SD1431 PLANAR SILICON TRANSISTOR COLOR TV HORIZONTAL OUTPUT APPLICATIONS(No Damper Diode) High Collector-Base Voltage(VCBO=1500V) 2-16D3A High Speed Switching ABSOLUTE MAXIMUM RATINGS (T =25oC) A Characteristic Symbol Rating Unit Collector-Base Voltage VCBO 1500 V Collector-Emitter Voltage VCEO 600 V Emitter-Base voltage VEBO 6 V Collector Current (DC) IC

 8.8. Size:27K  wingshing
 2sd1433.pdf

NPN TRIPLE DIFFUSED 2SD1433 PLANAR SILICON TRANSISTOR COLOR TV HORIZONTAL OUTPUT APPLICATIONS (No Damper Diode) High Collector-Base Voltage(VCBO=1500V) 2-16D3A High Speed Switching ABSOLUTE MAXIMUM RATINGS (T =25oC) A Characteristic Symbol Rating Unit Collector-Base Voltage VCBO 1500 V Collector-Emitter Voltage VCEO 600 V Emitter-Base voltage VEBO 6 V Collector Current (DC) I

 8.9. Size:215K  inchange semiconductor
 2sd1439.pdf

isc Silicon NPN Power Transistor 2SD1439 DESCRIPTION High Voltage High Switching Speed Built-in damper diode Wide Area of Safe Operation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in horizontal deflection circuits of colour TV receivers. ABSOLUTE MAXIMUM RATINGS (T =25 ) a SYMBOL PARAMETER VALUE UNI

 8.10. Size:191K  inchange semiconductor
 2sd1430.pdf

INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SD1430 DESCRIPTION High Breakdown Voltage- V = 1500V (Min) CBO High Switching Speed Low Saturation Voltage 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Color TV horizontal deflection output applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a

 8.11. Size:190K  inchange semiconductor
 2sd1432.pdf

INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SD1432 DESCRIPTION High Breakdown Voltage- V = 1500V (Min) CBO High Switching Speed Low Saturation Voltage 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Color TV horizontal deflection output applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a

 8.12. Size:89K  inchange semiconductor
 2sd1435.pdf

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD1435 DESCRIPTION With TO-3PN package DARLINGTON High DC current gain Complement to type 2SB1031 APPLICATIONS For low frequency power amplifier and high current switching applications PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base Fig.1 simplified outline

 8.13. Size:216K  inchange semiconductor
 2sd1436.pdf

isc Silicon NPN Darlington Power Transistor 2SD1436 DESCRIPTION High DC Current Gain h = 1000(Min.)@ I = 5A, V = 3V FE C CE Collector-Emitter Breakdown Voltage- V = 120V(Min) (BR)CEO Complement to Type 2SB1032 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for power switching applications. ABSOLUTE MAXIMUM RATI

 8.14. Size:215K  inchange semiconductor
 2sd1431.pdf

isc Silicon NPN Power Transistor 2SD1431 DESCRIPTION High Speed t = 1.0 us(MIN) @ I = 4A , I = 0.8A f C B(end) High Voltage V =1300V CBO Low Saturation Voltage V

 8.15. Size:190K  inchange semiconductor
 2sd1433.pdf

INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SD1433 DESCRIPTION High Breakdown Voltage- V = 1500V (Min) CBO High Switching Speed Low Saturation Voltage 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Color TV horizontal deflection output applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a