2SD1438 Todos los transistores

 

2SD1438 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: 2SD1438

Material: Si

Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 15 W

Tensión colector-base (Vcb): 80 V

Tensión colector-emisor (Vce): 80 V

Tensión emisor-base (Veb): 8 V

Corriente del colector DC máxima (Ic): 2 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Producto de corriente -- ganancia — ancho de banda (ft): 100 MHz

Capacitancia de salida (Cc): 20 pF

Ganancia de corriente contínua (hfe): 4000

Empaquetado / Estuche: TO126

Búsqueda de reemplazo de transistor bipolar 2SD1438

 

2SD1438 Datasheet (PDF)

0.1. 2sd1438.pdf Size:100K _toshiba

2SD1438
2SD1438

This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer

8.1. 2sd1430.pdf Size:49K _toshiba

2SD1438

This Material Copyrighted By Its Respective Manufacturer

8.2. 2sd1439.pdf Size:100K _panasonic

2SD1438
2SD1438

This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer

 8.3. 2sd1436.pdf Size:34K _hitachi

2SD1438
2SD1438

2SD1436(K)Silicon NPN Triple DiffusedApplicationPower switching complementary pair with 2SB1032(K)OutlineTO-3P211. Base2. Collector(Flange)3. Emitter 1.5 k 130 (Typ) (Typ)13232SD1436(K)Absolute Maximum Ratings (Ta = 25C)Item Symbol Rating UnitCollector to base voltage VCBO 120 VCollector to emitter voltage VCEO 120 VEmitter to base voltage VE

8.4. 2sd1435k.pdf Size:320K _hitachi

2SD1438
2SD1438

 8.5. 2sd1433.pdf Size:27K _wingshing

2SD1438

NPN TRIPLE DIFFUSED2SD1433 PLANAR SILICON TRANSISTORCOLOR TV HORIZONTAL OUTPUTAPPLICATIONS (No Damper Diode) High Collector-Base Voltage(VCBO=1500V) 2-16D3A High Speed Switching ABSOLUTE MAXIMUM RATINGS (T =25oC)ACharacteristic Symbol Rating Unit Collector-Base Voltage VCBO 1500 V Collector-Emitter Voltage VCEO 600 V Emitter-Base voltage VEBO 6 V Collector Current (DC) I

8.6. 2sd1431.pdf Size:28K _wingshing

2SD1438

NPN TRIPLE DIFFUSED2SD1431 PLANAR SILICON TRANSISTORCOLOR TV HORIZONTAL OUTPUTAPPLICATIONS(No Damper Diode) High Collector-Base Voltage(VCBO=1500V) 2-16D3A High Speed Switching ABSOLUTE MAXIMUM RATINGS (T =25oC)ACharacteristic Symbol Rating Unit Collector-Base Voltage VCBO 1500 V Collector-Emitter Voltage VCEO 600 V Emitter-Base voltage VEBO 6 V Collector Current (DC) IC

8.7. 2sd1437.pdf Size:69K _wingshing

2SD1438

2SD1437 NPN EPITAXIAL SILICON TRANSISTORLOW FREQUENCY POWER AMPLIFIER TO-220 Complement to 2SB1033ABSOLUTE MAXIMUM RATINGS (T =25)ACharacteristic Symbol Rating Unit Collector-Base Voltage VCBO 80 V Collector-Emitter Voltage VCEO 60 V Emitter-Base voltage VEBO 5 V Collector Current (DC) IC 3 A Collector Dissipation (Tc=25 PC 40 W Juncti

8.8. 2sd1432.pdf Size:28K _wingshing

2SD1438

NPN TRIPLE DIFFUSED2SD1432 PLANAR SILICON TRANSISTORCOLOR TV HORIZONTAL OUTPUTAPPLICATIONS(No Damper Diode) High Collector-Base Voltage(VCBO=1500V) 2-16D3A High Speed Switching ABSOLUTE MAXIMUM RATINGS (T =25oC)ACharacteristic Symbol Rating Unit Collector-Base Voltage VCBO 1500 V Collector-Emitter Voltage VCEO 600 V Emitter-Base voltage VEBO 6 V Collector Current (DC) IC

8.9. 2sd1439.pdf Size:215K _inchange_semiconductor

2SD1438
2SD1438

isc Silicon NPN Power Transistor 2SD1439DESCRIPTIONHigh VoltageHigh Switching SpeedBuilt-in damper diodeWide Area of Safe OperationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in horizontal deflection circuits ofcolour TV receivers.ABSOLUTE MAXIMUM RATINGS (T =25)aSYMBOL PARAMETER VALUE UNI

8.10. 2sd1433.pdf Size:190K _inchange_semiconductor

2SD1438
2SD1438

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SD1433DESCRIPTIONHigh Breakdown Voltage-: V = 1500V (Min)CBOHigh Switching SpeedLow Saturation Voltage100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSColor TV horizontal deflection output applicationsABSOLUTE MAXIMUM RATINGS(T =25)a

8.11. 2sd1430.pdf Size:191K _inchange_semiconductor

2SD1438
2SD1438

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SD1430DESCRIPTIONHigh Breakdown Voltage-: V = 1500V (Min)CBOHigh Switching SpeedLow Saturation Voltage100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSColor TV horizontal deflection output applicationsABSOLUTE MAXIMUM RATINGS(T =25)a

8.12. 2sd1436.pdf Size:216K _inchange_semiconductor

2SD1438
2SD1438

isc Silicon NPN Darlington Power Transistor 2SD1436DESCRIPTIONHigh DC Current Gain: h = 1000(Min.)@ I = 5A, V = 3VFE C CECollector-Emitter Breakdown Voltage-: V = 120V(Min)(BR)CEOComplement to Type 2SB1032Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for power switching applications.ABSOLUTE MAXIMUM RATI

8.13. 2sd1431.pdf Size:215K _inchange_semiconductor

2SD1438
2SD1438

isc Silicon NPN Power Transistor 2SD1431DESCRIPTIONHigh Speedt = 1.0 us(MIN) @ I = 4A , I = 0.8Af C B(end)High VoltageV =1300VCBOLow Saturation VoltageV

8.14. 2sd1437.pdf Size:209K _inchange_semiconductor

2SD1438
2SD1438

isc Silicon NPN Power Transistor 2SD1437DESCRIPTIONCollector-Emitter Breakdown Voltage:V = 60V(Min)(BR)CEOComplement to Type 2SB1033Low Collector Saturation VoltageMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for low frequency power amplification.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE

8.15. 2sd1435.pdf Size:89K _inchange_semiconductor

2SD1438
2SD1438

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD1435 DESCRIPTION With TO-3PN package DARLINGTON High DC current gain Complement to type 2SB1031 APPLICATIONS For low frequency power amplifier and high current switching applications PINNING PIN DESCRIPTION1 Base Collector;connected to 2 mounting base Fig.1 simplified outline

8.16. 2sd1432.pdf Size:190K _inchange_semiconductor

2SD1438
2SD1438

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SD1432DESCRIPTIONHigh Breakdown Voltage-: V = 1500V (Min)CBOHigh Switching SpeedLow Saturation Voltage100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSColor TV horizontal deflection output applicationsABSOLUTE MAXIMUM RATINGS(T =25)a

Otros transistores... 2SC619 , 2SC62 , 2SC620 , 2SC620M , 2SC621 , 2SC621A , 2SC621M , 2SC622 , 2N5401 , 2SC623 , 2SC624 , 2SC626 , 2SC627 , 2SC627F , 2SC628 , 2SC629 , 2SC63 .

 

 
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