2SD1441 Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 2SD1441
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 80 W
Tensión colector-base (Vcb): 1500 V
Corriente del colector DC máxima (Ic): 4 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Ganancia de corriente contínua (hFE): 12
Encapsulados: TO218
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2SD1441 datasheet
..1. Size:102K panasonic
2sd1441.pdf 
This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer
..2. Size:75K jmnic
2sd1441.pdf
Product Specification www.jmnic.com Silicon NPN Power Transistors 2SD1441 DESCRIPTION With TO-3PN package Built-in damper diode High voltage ,high reliability High speed switching Wide area of safe operation APPLICATIONS For horizontal deflection output applications PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base 3 Emitter Fig.1
..3. Size:214K inchange semiconductor
2sd1441.pdf
isc Silicon NPN Power Transistor 2SD1441 DESCRIPTION High Breakdown Voltage- V = 1500V (Min) CBO High Switching Speed Built-in Damper Diode Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for horizontal deflection output applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Ba
8.1. Size:230K 1
2sd1449.pdf
/ e c d n cle stage. e a u n n i e t t n n i o a c s maintenance type planed maintenance type M i discontinued type planed discontinued typed D Maintenance/Discontinued includes following four Product lifecy http //www.semicon.panasonic.co.jp/en/ Please visit following URL about latest information. / e c d n cle stage. e a u n n i e t t n n i o
8.2. Size:102K panasonic
2sd1440.pdf
This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer
8.3. Size:63K panasonic
2sd1446.pdf
Power Transistors 2SD1446 Silicon NPN triple diffusion planar type Darlington For power amplification Unit mm 10.0 0.2 4.2 0.2 5.5 0.2 2.7 0.2 Features 3.1 0.1 High foward current transfer ratio hFE High collector to base voltage VCBO Full-pack package which can be installed to the heat sink with one screw 1.3 0.2 1.4 0.1 +0.2 Absolute Maximum Ratings (TC=25 C
8.4. Size:209K inchange semiconductor
2sd1445.pdf
INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SD1445 DESCRIPTION Low Collector Saturation Voltage V = 0.6V(Max)@ I = 10A CE(sat) C Collector-Emitter Breakdown Voltage- V = 20V (Min) (BR)CEO Fast Switching Speed Complement to Type 2SB948 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for power ampl
8.5. Size:126K inchange semiconductor
2sd1444 2sd1444a.pdf
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD1444 2SD1444A DESCRIPTION With TO-220Fa package Low collector saturation voltage High speed switching High collector current Complement to type 2SB953/953A APPLICATIONS Power amplifiers Low voltage switching PINNING PIN DESCRIPTION 1 Base 2 Collector Fig.1 simplified outline (
8.6. Size:215K inchange semiconductor
2sd1440.pdf
isc Silicon NPN Power Transistor 2SD1440 DESCRIPTION High Breakdown Voltage- V = 1500V (Min) CBO High Switching Speed Built-in Damper Diode Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for horizontal deflection output applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Ba
8.7. Size:167K inchange semiconductor
2sd1445 2sd1445a.pdf
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD1445 2SD1445A DESCRIPTION With TO-220Fa package Complement to type 2SB948/948A High speed switching Low collector saturation voltage APPLICATIONS For power amplification,power switching and low-voltage switching applications PINNING PIN DESCRIPTION 1 Base 2 Collector 3 Emitter Ab
8.9. Size:202K inchange semiconductor
2sd1446.pdf
INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor 2SD1446 DESCRIPTION High Collector-Emitter Breakdown Voltage- V = 400V(Min) (BR)CEO Low Collector-Emitter Saturation Voltage- V = 1.5V(Max) @I = 3A CE(sat) C High DC Current Gain h = 500(Min) @ I = 2A, V = 2V FE C CE 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance
8.10. Size:216K inchange semiconductor
2sd1444.pdf
isc Silicon NPN Power Transistor 2SD1444 DESCRIPTION Low Collector Saturation Voltage V = 0.6V(Max)@ I = 5A CE(sat) C Collector-Emitter Breakdown Voltage- V = 20V (Min) (BR)CEO Complement to Type 2SB956 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for power amplifier applications. ABSOLUTE MAXIMUM RATINGS(T =
Otros transistores... 2SD1435K, 2SD1436, 2SD1436K, 2SD1437, 2SD1438, 2SD1439, 2SD144, 2SD1440, 2SC4793, 2SD1442, 2SD1442A, 2SD1443, 2SD1443A, 2SD1444, 2SD1444A, 2SD1445, 2SD1445A
