2SD1446 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Power Transistors2SD1446Silicon NPN triple diffusion planar type DarlingtonFor power amplificationUnit: mm10.0 0.2 4.2 0.25.5 0.2 2.7 0.2Features 3.1 0.1High foward current transfer ratio hFEHigh collector to base voltage VCBOFull-pack package which can be installed to the heat sink withone screw1.3 0.21.4 0.1+0.2Absolute Maximum Ratings (TC=25C

INCHANGE Semiconductorisc Silicon NPN Darlington Power Transistor 2SD1446DESCRIPTIONHigh Collector-Emitter Breakdown Voltage-: V = 400V(Min)(BR)CEO Low Collector-Emitter Saturation Voltage-: V = 1.5V(Max) @I = 3ACE(sat) CHigh DC Current Gain: h = 500(Min) @ I = 2A, V = 2VFE C CE100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance

/ecdncle stage.eaunniettnnioacsmaintenance typeplaned maintenance typeMidiscontinued typeplaned discontinued typedDMaintenance/Discontinued includes following four Product lifecyhttp://www.semicon.panasonic.co.jp/en/Please visit following URL about latest information./ecdncle stage.eaunniettnnio

This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer

This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer

Product Specification www.jmnic.com Silicon NPN Power Transistors 2SD1441 DESCRIPTION With TO-3PN package Built-in damper diode High voltage ,high reliability High speed switching Wide area of safe operation APPLICATIONS For horizontal deflection output applications PINNING PIN DESCRIPTION1 Base Collector;connected to 2 mounting base 3 EmitterFig.1

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SD1445DESCRIPTIONLow Collector Saturation Voltage: V = 0.6V(Max)@ I = 10ACE(sat) CCollector-Emitter Breakdown Voltage-: V = 20V (Min)(BR)CEOFast Switching SpeedComplement to Type 2SB948Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for power ampl

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD1444 2SD1444A DESCRIPTION With TO-220Fa package Low collector saturation voltage High speed switching High collector current Complement to type 2SB953/953A APPLICATIONS Power amplifiers Low voltage switching PINNING PIN DESCRIPTION1 Base 2 CollectorFig.1 simplified outline (

isc Silicon NPN Power Transistor 2SD1440DESCRIPTIONHigh Breakdown Voltage-: V = 1500V (Min)CBOHigh Switching SpeedBuilt-in Damper DiodeMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for horizontal deflection output applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Ba

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD1445 2SD1445A DESCRIPTION With TO-220Fa package Complement to type 2SB948/948A High speed switching Low collector saturation voltage APPLICATIONS For power amplification,power switching and low-voltage switching applications PINNING PIN DESCRIPTION1 Base 2 Collector3 EmitterAb

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SD144DESCRIPTIONDC Current Gain -h = 40(Min)@ I = 1AFE CCollector-Emitter Breakdown Voltage-: V = 50V(Min)(BR) CEOWith TO-66 PackageMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in power amplifier applications.ABSOLUTE MAXIMUM RATINGS(T =25

isc Silicon NPN Power Transistor 2SD1444DESCRIPTIONLow Collector Saturation Voltage: V = 0.6V(Max)@ I = 5ACE(sat) CCollector-Emitter Breakdown Voltage-: V = 20V (Min)(BR)CEOComplement to Type 2SB956Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for power amplifier applications.ABSOLUTE MAXIMUM RATINGS(T =

isc Silicon NPN Power Transistor 2SD1441DESCRIPTIONHigh Breakdown Voltage-: V = 1500V (Min)CBOHigh Switching SpeedBuilt-in Damper DiodeMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for horizontal deflection output applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Ba