2SD1450 Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 2SD1450
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.3 W
Tensión colector-base (Vcb): 25 V
Tensión colector-emisor (Vce): 20 V
Tensión emisor-base (Veb): 12 V
Corriente del colector DC máxima (Ic): 0.5 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (fT): 200 typ MHz
Capacitancia de salida (Cc): 10 pF
Ganancia de corriente contínua (hFE): 200
Encapsulados: SC72
Búsqueda de reemplazo de 2SD1450
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2SD1450 datasheet
..1. Size:39K panasonic
2sd1450.pdf 
Transistor 2SD1450 Silicon NPN epitaxial planer type For low-frequency amplification Unit mm 4.0 0.2 Features Optimum for high-density mounting. Allowing supply with the radial taping. Low collector to emitter saturation voltage VCE(sat). marking Absolute Maximum Ratings (Ta=25 C) 1 2 3 Parameter Symbol Ratings Unit Collector to base voltage VCBO 25 V Collector to emitter vol
..2. Size:44K panasonic
2sd1450 e.pdf
Transistor 2SD1450 Silicon NPN epitaxial planer type For low-frequency amplification Unit mm 4.0 0.2 Features Optimum for high-density mounting. Allowing supply with the radial taping. Low collector to emitter saturation voltage VCE(sat). marking Absolute Maximum Ratings (Ta=25 C) 1 2 3 Parameter Symbol Ratings Unit Collector to base voltage VCBO 25 V Collector to emitter vol
8.1. Size:121K sanyo
2sb1037 2sd1459.pdf
Ordering number EN1256C PNP/NPN Planar Silicon Transistors 2SB1037/2SD1459 Color TV Vertical Output, Sound Output Applications Features Package Dimensions High allowable collector dissipation (PC=2W). unit mm Wide ASO. 2010C [2SB1037/2SD1459] JEDEC TO-220AB 1 Base ( ) 2SB1037 EIAJ SC-46 2 Collector 3 Emitter Specifications Absolute Maximum Ratings at Ta = 25
8.2. Size:41K panasonic
2sd1458 e.pdf
Transistor 2SD1458 Silicon NPN epitaxial planer type For low-frequency amplification Unit mm 6.9 0.1 2.5 0.1 1.5 1.5 R0.9 1.0 R0.9 Features High foward current transfer ratio hFE. Low collector to emitter saturation voltage VCE(sat). M type package allowing easy automatic and manual insertion as well as stand-alone fixing to the printed circuit board. 0.85 0.55 0.1 0.45 0
8.3. Size:37K panasonic
2sd1458.pdf
Transistor 2SD1458 Silicon NPN epitaxial planer type For low-frequency amplification Unit mm 6.9 0.1 2.5 0.1 1.5 1.5 R0.9 1.0 R0.9 Features High foward current transfer ratio hFE. Low collector to emitter saturation voltage VCE(sat). M type package allowing easy automatic and manual insertion as well as stand-alone fixing to the printed circuit board. 0.85 0.55 0.1 0.45 0
8.4. Size:61K panasonic
2sd1457.pdf
Power Transistors 2SD1457, 2SD1457A Silicon NPN triple diffusion planar type Darlington For power amplification Unit mm 15.0 0.3 5.0 0.2 11.0 0.2 3.2 Features High foward current transfer ratio hFE 3.2 0.1 High collector to base voltage VCBO Full-pack package which can be installed to the heat sink with one screw 2.0 0.2 2.0 0.1 Absolute Maximum Ratings (TC=25 C)
8.6. Size:212K inchange semiconductor
2sd1459.pdf
isc Silicon NPN Power Transistor 2SD1459 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 150V(Min.) (BR)CEO Wide Area of Safe Operation Complement to Type 2SB1037 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for color TV vertical output, sound output applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMB
8.7. Size:212K inchange semiconductor
2sd1452.pdf
isc Silicon NPN Power Transistor 2SD1452 DESCRIPTION High Breakdown Voltage- V = 1500V (Min) CBO High Switching Speed Built-in Damper Diode Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for TV horizontal deflection output applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector
8.8. Size:212K inchange semiconductor
2sd1454.pdf
isc Silicon NPN Power Transistor 2SD1454 DESCRIPTION High Breakdown Voltage- V = 1500V (Min) CBO High Switching Speed Built-in Damper Diode Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for TV horizontal deflection output applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector
8.9. Size:222K inchange semiconductor
2sd1457.pdf
isc Silicon NPN Darlington Power Transistor 2SD1457 DESCRIPTION High DC Current Gain h = 700(Min.)@ I = 2A, V = 2V FE C CE High Collector-Emitter Sustaining Voltage- V = 150V(Min) CEO(SUS) Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for power amplification. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETE
8.10. Size:212K inchange semiconductor
2sd1456.pdf
isc Silicon NPN Power Transistor 2SD1456 DESCRIPTION High Breakdown Voltage- V = 1500V (Min) CBO High Switching Speed Built-in Damper Diode Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for TV horizontal deflection output applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector
8.11. Size:213K inchange semiconductor
2sd1455.pdf
isc Silicon NPN Power Transistor 2SD1455 DESCRIPTION High Breakdown Voltage- V = 1500V (Min) CBO High Switching Speed Built-in Damper Diode Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for TV horizontal deflection output applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector
8.12. Size:214K inchange semiconductor
2sd1453.pdf
isc Silicon NPN Power Transistor 2SD1453 DESCRIPTION High Breakdown Voltage- V = 1500V (Min) CBO High Switching Speed Built-in Damper Diode Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for TV horizontal deflection output applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector
8.13. Size:119K inchange semiconductor
2sd1457 2sd1457a.pdf
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD1457 2SD1457A DESCRIPTION With TO-3PFa package High DC current gain DARLINGTON High VCBO APPLICATIONS For power amplification PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base Fig.1 simplified outline (TO-3PFa) and symbol 3 Emitter Absolute maximum ratings
8.14. Size:188K inchange semiconductor
2sd1451.pdf
INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SD1451 DESCRIPTION High Breakdown Voltage- V = 1500V (Min) CBO High Switching Speed Built-in Damper Diode Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for TV horizontal deflection output applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER
Otros transistores... 2SD1444, 2SD1444A, 2SD1445, 2SD1445A, 2SD1446, 2SD1447, 2SD1448, 2SD1449, TIP127, 2SD1451, 2SD1452, 2SD1453, 2SD1454, 2SD1455, 2SD1456, 2SD1457, 2SD1458
