2SD1481 Todos los transistores

 ..1. Size:107K  nec
 2sd1481.pdf

DATA SHEET SILICON POWER TRANSISTOR 2SD1481 NPN SILICON EPITAXIAL TRANSISTOR (DARLINGTON CONNECTION) FOR LOW-FREQUENCY POWER AMPLIFIERS AND LOW-SPEED SWITCHING FEATURES PACKAGE DRAWING (UNIT mm) On-chip C-to-B Zener diode for surge voltage absorption Low collector saturation voltage VCE(SAT) = 1.5 V MAX. (at 1 A) Ideal for use in a direct drive from IC to the devices such

 ..2. Size:210K  inchange semiconductor
 2sd1481.pdf

INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor 2SD1481 DESCRIPTION On-chip C-to-B Zener diode for surge voltage absorption Low Collector-Emitter Saturation Voltage- V = 1.5V(Max) @I = 1A CE(sat) C High DC Current Gain h = 2000(Min) @I = 1A FE C 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation

 8.1. Size:977K  rohm
 2sd1949fra 2sd1484kfra.pdf

Data Sheet AEC-Q101 Qualified Medium Power Transistor (50V,0.5A) 2SD1949FRA / 2SD1484KFRA 2SD1949 / 2SD1484K Features Dimensions (Unit mm) 1) High current.(IC=0.5A) UMT3 2) Low saturation voltage, typically VCE(sat)=0.1V at IC / IB=150mA / 15mA. (SC-70) (1) Emitter (2) Bace (3) Collector Absolute maximum rationgs (Ta=25 C) SMT3 (SC-59) Parameter Symbol Limits Unit

 8.2. Size:106K  rohm
 2sd1949 2sd1949 2sd1484k.pdf

Data Sheet Medium Power Transistor (50V,0.5A) M e d i u m P o w e r T r a n s i s t o r ( 5 0 V , 0 . 5 A ) 2SD1949 / 2SD1484K 2 S D 1 9 4 9 2 S D 1 4 8 4 K Features Dimensions (Unit mm) 1) High current.(IC=0.5A) UMT3 2) Low saturation voltage, typically VCE(sat)=0.1V at IC / IB=150mA / 15mA. (SC-70) (1) Emitter (2) Bace (3) C

 8.3. Size:35K  rohm
 2sc1741as 2sc3359s 2sd1484.pdf

2SD1949 / 2SD1484K / 2SC1741S Transistors Transistors 2SC3359S (96-678-D15) (SPEC-D16) 318

 8.4. Size:1672K  rohm
 2sd1949 2sd1484k.pdf

2SD1949 / 2SD1484K Datasheet Middle Power Transistor (50V, 500mA) lOutline l Parameter Value SOT-323 SOT-346 VCEO 50V IC 500mA 2SD1949 2SD1484K (UMT3) (SMT3) lFeatures lInner circuit l l 1)High current. (IC=0.5A) 2)Low VCE(sat) VCE(sat) 400mV at IC=150mA/IB=15

 8.5. Size:45K  panasonic
 2sd1488.pdf

 8.6. Size:44K  panasonic
 2sd1485.pdf

Power Transistors 2SD1485 Silicon NPN triple diffusion planar type For high power amplification Unit mm Complementary to 2SB1054 15.0 0.3 5.0 0.2 Features 11.0 0.2 3.2 Extremely satisfactory linearity of the forward current transfer ratio hFE 3.2 0.1 Wide area of safe operation (ASO) High transition frequency fT Full-pack package which can be installed to the heat sink

 8.7. Size:39K  panasonic
 2sd1487.pdf

 8.8. Size:46K  panasonic
 2sd1480.pdf

Power Transistors 2SD1480 Silicon NPN triple diffusion planar type For power amplification Unit mm Complementary to 2SB1052 10.0 0.2 4.2 0.2 5.5 0.2 2.7 0.2 Features High forward current transfer ratio hFE which has satisfactory linearity 3.1 0.1 Low collector to emitter saturation voltage VCE(sat) Full-pack package which can be installed to the heat sink with one

 8.9. Size:39K  panasonic
 2sd1486.pdf

 8.10. Size:23K  hitachi
 2sd1489.pdf

2SD1489 Silicon NPN Epitaxial Application Low frequency power amplifier Complementary pair with 2SB1058 Outline TO-92 (1) 1. Emitter 2. Collector 3. Base 3 2 1 2SD1489 Absolute Maximum Ratings (Ta = 25 C) Item Symbol Ratings Unit Collector to base voltage VCBO 20 V Collector to emitter voltage VCEO 16 V Emitter to base voltage VEBO 6V Collector current IC 2A Collec

 8.11. Size:215K  inchange semiconductor
 2sd1488.pdf

isc Silicon NPN Power Transistor 2SD1488 DESCRIPTION Low Collector Saturation Voltage- V = 2.0V(Max)@I = 7A CE(sat) C Wide Area of Safe Operation Complement to Type 2SB1057 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high power amplifier applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER V

 8.12. Size:214K  inchange semiconductor
 2sd1485.pdf

isc Silicon NPN Power Transistor 2SD1485 DESCRIPTION Low Collector Saturation Voltage- V = 2.0V(Max)@I = 3A CE(sat) C Wide Area of Safe Operation Complement to Type 2SB1054 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high power amplifier applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER V

 8.13. Size:214K  inchange semiconductor
 2sd1487.pdf

isc Silicon NPN Power Transistor 2SD1487 DESCRIPTION Low Collector Saturation Voltage- V = 2.0V(Max)@I = 5A CE(sat) C Wide Area of Safe Operation Complement to Type 2SB1056 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high power amplifier applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER V

 8.14. Size:215K  inchange semiconductor
 2sd1480.pdf

isc Silicon NPN Power Transistor 2SD1480 DESCRIPTION Low Collector Saturation Voltage V = 2.0V(Max)@ I = 2A CE(sat) C Collector-Emitter Breakdown Voltage- V = 60V (Min) (BR)CEO Good Linearity of h FE Complement to Type 2SB1052 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for power amplifier applications.

 8.15. Size:214K  inchange semiconductor
 2sd1486.pdf

isc Silicon NPN Power Transistor 2SD1486 DESCRIPTION Low Collector Saturation Voltage- V = 2.0V(Max)@I = 4A CE(sat) C Wide Area of Safe Operation Complement to Type 2SB1055 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high power amplifier applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER V