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2SD1489 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: 2SD1489

Material: Si

Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 0.75 W

Tensión colector-base (Vcb): 20 V

Corriente del colector DC máxima (Ic): 2 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Ganancia de corriente contínua (hfe): 280

Empaquetado / Estuche: TO92

Búsqueda de reemplazo de transistor bipolar 2SD1489

 

2SD1489 Datasheet (PDF)

1.1. 2sd1489.pdf Size:23K _hitachi

2SD1489
2SD1489

2SD1489 Silicon NPN Epitaxial Application • Low frequency power amplifier • Complementary pair with 2SB1058 Outline TO-92 (1) 1. Emitter 2. Collector 3. Base 3 2 1 2SD1489 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Unit Collector to base voltage VCBO 20 V Collector to emitter voltage VCEO 16 V Emitter to base voltage VEBO 6V Collector current IC 2A Collec

4.1. 2sd1481.pdf Size:107K _nec

2SD1489
2SD1489

DATA SHEET SILICON POWER TRANSISTOR 2SD1481 NPN SILICON EPITAXIAL TRANSISTOR (DARLINGTON CONNECTION) FOR LOW-FREQUENCY POWER AMPLIFIERS AND LOW-SPEED SWITCHING FEATURES PACKAGE DRAWING (UNIT: mm) • On-chip C-to-B Zener diode for surge voltage absorption • Low collector saturation voltage: VCE(SAT) = 1.5 V MAX. (at 1 A) • Ideal for use in a direct drive from IC to the devices such

4.2. 2sd1949fra 2sd1484kfra.pdf Size:977K _rohm

2SD1489
2SD1489

Data Sheet AEC-Q101 Qualified Medium Power Transistor (50V,0.5A) 2SD1949FRA / 2SD1484KFRA 2SD1949 / 2SD1484K Features Dimensions (Unit : mm) 1) High current.(IC=0.5A) UMT3 2) Low saturation voltage, typically VCE(sat)=0.1V at IC / IB=150mA / 15mA. (SC-70) (1) Emitter (2) Bace (3) Collector Absolute maximum rationgs (Ta=25 C) SMT3 (SC-59) Parameter Symbol Limits Unit

 4.3. 2sd1949 2sd1949 2sd1484k.pdf Size:106K _rohm

2SD1489
2SD1489

Data Sheet Medium Power Transistor (50V,0.5A) M e d i u m P o w e r T r a n s i s t o r ( 5 0 V , 0 . 5 A ) 2SD1949 / 2SD1484K 2 S D 1 9 4 9 2 S D 1 4 8 4 K Features Dimensions (Unit : mm) 1) High current.(IC=0.5A) UMT3 2) Low saturation voltage, typically VCE(sat)=0.1V at IC / IB=150mA / 15mA. (SC-70) (1) Emitter (2) Bace (3) C

4.4. 2sc1741as 2sc3359s 2sd1484.pdf Size:35K _rohm

2SD1489

2SD1949 / 2SD1484K / 2SC1741S Transistors Transistors 2SC3359S (96-678-D15) (SPEC-D16) 318

 4.5. 2sd1480.pdf Size:46K _panasonic

2SD1489
2SD1489

Power Transistors 2SD1480 Silicon NPN triple diffusion planar type For power amplification Unit: mm Complementary to 2SB1052 10.0± 0.2 4.2± 0.2 5.5± 0.2 2.7± 0.2 Features High forward current transfer ratio hFE which has satisfactory linearity φ 3.1± 0.1 Low collector to emitter saturation voltage VCE(sat) Full-pack package which can be installed to the heat sink with one

4.6. 2sd1487.pdf Size:39K _panasonic

2SD1489



4.7. 2sd1486.pdf Size:39K _panasonic

2SD1489



4.8. 2sd1488.pdf Size:45K _panasonic

2SD1489



4.9. 2sd1485.pdf Size:44K _panasonic

2SD1489
2SD1489

Power Transistors 2SD1485 Silicon NPN triple diffusion planar type For high power amplification Unit: mm Complementary to 2SB1054 15.0± 0.3 5.0± 0.2 Features 11.0± 0.2 3.2 Extremely satisfactory linearity of the forward current transfer ratio hFE φ 3.2± 0.1 Wide area of safe operation (ASO) High transition frequency fT Full-pack package which can be installed to the heat sink

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