2SD1514 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 2SD1514
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 100 W
Tensión colector-base (Vcb): 100 V
Corriente del colector DC máxima (Ic): 15 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Ganancia de corriente contínua (hfe): 4000
Paquete / Cubierta: TO126
Búsqueda de reemplazo de 2SD1514
2SD1514 Datasheet (PDF)
2sd1514.pdf

INCHANGE Semiconductorisc Silicon NPN Darlington Power Transistor 2SD1514DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 100V(Min)(BR)CEOHigh DC Current Gain: h = 1000(Min) @ I = 10A, V = 3VFE C CEFast Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for low frequency power amplifier and
2sd1511.pdf

Transistor2SD1511Silicon NPN epitaxial planer type darlingtonUnit: mmFor low-frequency output amplification1.5 0.14.5 0.11.6 0.2FeaturesForward current transfer ratio hFE is designed high, which is ap-propriate to the driver circuit of motors and printer bammer: hFE45= 4000 to 2000.A shunt resistor is omitted from the driver.0.4 0.080.4 0.04Mini Power
2sd1511 e.pdf

Transistor2SD1511Silicon NPN epitaxial planer type darlingtonUnit: mmFor low-frequency output amplification1.5 0.14.5 0.11.6 0.2FeaturesForward current transfer ratio hFE is designed high, which is ap-propriate to the driver circuit of motors and printer bammer: hFE45= 4000 to 2000.A shunt resistor is omitted from the driver.0.4 0.080.4 0.04Mini Power
Otros transistores... 2SD1507M , 2SD1508 , 2SD1509 , 2SD151 , 2SD1510 , 2SD1511 , 2SD1512 , 2SD1513 , 100DA025D , 2SD1515 , 2SD1516 , 2SD1517 , 2SD1518 , 2SD1519 , 2SD152 , 2SD1520 , 2SD1520L .
History: PMBT3904 | DT600-500 | 2SD1904R | MRF477
History: PMBT3904 | DT600-500 | 2SD1904R | MRF477



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