2SD1514 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 2SD1514
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 100 W
Tensión colector-base (Vcb): 100 V
Corriente del colector DC máxima (Ic): 15 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Ganancia de corriente contínua (hfe): 4000
Empaquetado / Estuche: TO126
Búsqueda de reemplazo de transistor bipolar 2SD1514
2SD1514 Datasheet (PDF)
4.1. 2sd1513.pdf 
Size:149K _nec
4.2. 2sd1512 e.pdf Size:40K _panasonic
Transistor 2SD1512 Silicon NPN epitaxial planer type For low-frequency amplification Unit: mm 4.0 0.2 Features Allowing supply with the radial taping. High foward current transfer ratio hFE. marking Absolute Maximum Ratings (Ta=25?C) 1 2 3 Parameter Symbol Ratings Unit Collector to base voltage VCBO 100 V Collector to emitter voltage VCEO 100 V 1.27 1.27 2.54 0.15 Emitter to base
4.3. 2sd1511 e.pdf Size:56K _panasonic
Transistor 2SD1511 Silicon NPN epitaxial planer type darlington Unit: mm For low-frequency output amplification 1.5 0.1 4.5 0.1 1.6 0.2 Features Forward current transfer ratio hFE is designed high, which is ap- propriate to the driver circuit of motors and printer bammer: hFE 45 = 4000 to 2000. A shunt resistor is omitted from the driver. 0.4 0.08 0.4 0.04 Mini Power type pac
4.4. 2sd1511.pdf Size:52K _panasonic
Transistor 2SD1511 Silicon NPN epitaxial planer type darlington Unit: mm For low-frequency output amplification 1.5 0.1 4.5 0.1 1.6 0.2 Features Forward current transfer ratio hFE is designed high, which is ap- propriate to the driver circuit of motors and printer bammer: hFE 45 = 4000 to 2000. A shunt resistor is omitted from the driver. 0.4 0.08 0.4 0.04 Mini Power type pac
4.5. 2sd1516.pdf Size:111K _inchange_semiconductor
INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SD1516 DESCRIPTION ·Low Collector Saturation Voltage ·Good Linearity of hFE ·High Switching Speed ·High IC APPLICATIONS ·Designed for power amplifier ,power switching applications. ABSOLUTE MAXIMUM RATINGS (Ta=25?) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 130 V VCEO Collector
4.6. 2sd1518.pdf Size:230K _inchange_semiconductor
INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SD1518 DESCRIPTION ·High Collector-Emitter Breakdown Voltage- : V(BR)CEO= 400V(Min) ·High Switching Speed APPLICATIONS ·Switching regulator and high voltage switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25?) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 900 V VCEO Collector
4.7. 2sd1517.pdf Size:273K _inchange_semiconductor
INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SD1517 DESCRIPTION ·Low Collector Saturation Voltage : VCE(sat)= 0.5V(Max)@ IC= 2A ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 80V (Min) ·Good Linearity of hFE ·High Speed Switching APPLICATIONS ·Designed for power amplifier,power switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=2
4.8. 2sd1511.pdf Size:842K _kexin
SMD Type Transistors NPN Transistors 2SD1511 SOT-89 Unit:mm 1.70 0.1 ■ Features ● Collector Current Capability IC=1A ● Collector Emitter Voltage VCEO=80V C 0.42 0.1 0.46 0.1 B 1.Base 2.Collector E 3.Emitter ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit Collector - Base Voltage VCBO 100 Collector - Emitter Voltage VCEO 80 V Emitter - Base Vo
Otros transistores... 2SC431 , 2SC4310 , 2SC4311 , 2SC4312 , 2SC4313 , 2SC4314 , 2SC4315 , 2SC4316 , BC147 , 2SC4318 , 2SC432 , 2SC4320 , 2SC4321 , 2SC4322 , 2SC4323 , 2SC4324 , 2SC4325 .
