2SD1525 Todos los transistores

 

2SD1525 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: 2SD1525

Material: Si

Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 150 W

Tensión colector-base (Vcb): 100 V

Tensión colector-emisor (Vce): 100 V

Tensión emisor-base (Veb): 5 V

Corriente del colector DC máxima (Ic): 30 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Producto de corriente -- ganancia — ancho de banda (ft): 10 MHz

Capacitancia de salida (Cc): 500 pF

Ganancia de corriente contínua (hfe): 2000

Empaquetado / Estuche: TO220

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2SD1525 Datasheet (PDF)

1.1. 2sd1525.pdf Size:175K _toshiba

2SD1525
2SD1525

2SD1525 TOSHIBA Transistor Silicon NPN Triple Diffused Type (Darlington Power Transistor) 2SD1525 High Current Switching Applications Unit: mm • High collector current: IC = 30 A • High DC current gain: hFE = 1000 (min) (VCE = 5 V, IC = 20 A) • Monolithic construction with built-in base-emitter shunt resistor. Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol

1.2. 2sd1525.pdf Size:259K _inchange_semiconductor

2SD1525
2SD1525

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Darlington Power Transistor 2SD1525 DESCRIPTION ·High DC Current Gain : hFE= 1000(Min.)@ IC= 20A ·Collector-Emitter Breakdown Voltage- : V(BR)CEO = 100V(Min.) APPLICATIONS ·Designed for high current switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25?) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Volta

 4.1. 2sd1520.pdf Size:373K _hitachi

2SD1525
2SD1525

4.2. 2sd1527.pdf Size:32K _hitachi

2SD1525
2SD1525

2SD1527 Silicon NPN Triple Diffused Application High voltage power amplifier Outline TO-220AB 1. Base 2. Collector (Flange) 1 3. Emitter 2 3 Absolute Maximum Ratings (Ta = 25C) Item Symbol Rating Unit Collector to base voltage VCBO 1000 V Collector to emitter voltage VCEO 1000 V Emitter to base voltage VEBO 5V Collector current IC 0.5 A Collector power dissipation PC 1.8 W PC*

 4.3. 2sd1521.pdf Size:34K _hitachi

2SD1525
2SD1525

2SD1521 Silicon NPN Epitaxial Application Low frequency power amplifier Outline TO-126 MOD 2 3 1. Emitter ID 2. Collector 3. Base 1 2 k? 0.5 k? 2 3 (Typ) (Typ) 1 Absolute Maximum Ratings (Ta = 25C) Item Symbol Rating Unit Collector to emitter voltage VCEO 50 V Emitter to base voltage VEBO 7V Collector current IC 1.5 A Collector peak current IC (peak) 3.0 A Collector power d

4.4. 2sd1528.pdf Size:242K _inchange_semiconductor

2SD1525
2SD1525

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SD1528 DESCRIPTION ·Low Collector Saturation Voltage : VCE(sat)= 0.5V(Max)@ IC= 2A ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 80V (Min) ·Good Linearity of hFE ·High Speed Switching APPLICATIONS ·Designed for power amplifier,power switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=2

Otros transistores... 2SC431 , 2SC4310 , 2SC4311 , 2SC4312 , 2SC4313 , 2SC4314 , 2SC4315 , 2SC4316 , BC147 , 2SC4318 , 2SC432 , 2SC4320 , 2SC4321 , 2SC4322 , 2SC4323 , 2SC4324 , 2SC4325 .

 
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