2SD1530 Todos los transistores

 ..1. Size:216K  inchange semiconductor
 2sd1530.pdf

isc Silicon NPN Power Transistor 2SD1530 DESCRIPTION Low Collector Saturation Voltage V = 0.5V(Max)@ I = 2A CE(sat) C Collector-Emitter Breakdown Voltage- V = 80V (Min) (BR)CEO Good Linearity of h FE High Speed Switching Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for power amplifier,power switching appli

 8.1. Size:48K  rohm
 2sd1536m.pdf

 8.2. Size:65K  panasonic
 2sd1535.pdf

Power Transistors 2SD1535 Silicon NPN triple diffusion planar type Darlington For high power amplification Unit mm 10.0 0.2 4.2 0.2 5.5 0.2 2.7 0.2 Features Extremely satisfactory linearity of the forward current transfer 3.1 0.1 ratio hFE High collector to base voltage VCBO Wide area of safe operation (ASO) Full-pack package which can be installed to the heat sink wi

 8.3. Size:57K  panasonic
 2sd1538.pdf

Power Transistors 2SD1538, 2SD1538A Silicon NPN epitaxial planar type Unit mm 8.5 0.2 3.4 0.3 For low-voltage switching 6.0 0.5 1.0 0.1 Complementary to 2SB1070 and 2SB1070A Features Low collector to emitter saturation voltage VCE(sat) 1.5max. 1.1max. High-speed switching N type package enabling direct soldering of the radiating fin to 0.8 0.1 0.5max. the printed circ

 8.4. Size:54K  panasonic
 2sd1539.pdf

Power Transistors 2SD1539, 2SD1539A Silicon NPN epitaxial planar type For low-voltage switching Unit mm Complementary to 2SB1071 and 2SB1071A 10.0 0.2 4.2 0.2 5.5 0.2 2.7 0.2 Features Low collector to emitter saturation voltage VCE(sat) High-speed switching 3.1 0.1 Full-pack package which can be installed to the heat sink with one screw Absolute Maximum Ratings (T

 8.5. Size:211K  inchange semiconductor
 2sd1535.pdf

isc Silicon NPN Power Transistor 2SD1535 DESCRIPTION Collector-Base Breakdown Voltage- V = 500V(Min.) (BR)CBO Wide Area of Safe Operation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high power amplifier applications. ABSOLUTE MAXIMUM RATINGS (T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage 5

 8.6. Size:209K  inchange semiconductor
 2sd1533.pdf

isc Silicon NPN Power Transistor 2SD1533 DESCRIPTION Collector-Base Breakdown Voltage- V = 500V(Min.) (BR)CBO Wide Area of Safe Operation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high power amplifier applications. ABSOLUTE MAXIMUM RATINGS (T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage 5

 8.7. Size:211K  inchange semiconductor
 2sd1531.pdf

isc Silicon NPN Power Transistor 2SD1531 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 40V(Min) (BR)CEO Good Linearity of h FE Low Collector Saturation Voltage Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for AF output amplifier applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE U

 8.8. Size:201K  inchange semiconductor
 2sd1532.pdf

INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor 2SD1532 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 120V(Min) (BR)CEO High DC Current Gain h = 1000(Min) @ I = 2A, V = 4V FE C CE Fast Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for general purpose amplifier and low