2SD1535 Todos los transistores

 

2SD1535 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: 2SD1535

Material: Si

Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 45 W

Tensión colector-base (Vcb): 500 V

Corriente del colector DC máxima (Ic): 7 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Ganancia de corriente contínua (hfe): 2000

Empaquetado / Estuche: TO220

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2SD1535 Datasheet (PDF)

1.1. 2sd1535.pdf Size:65K _panasonic

2SD1535
2SD1535

Power Transistors 2SD1535 Silicon NPN triple diffusion planar type Darlington For high power amplification Unit: mm 10.0 0.2 4.2 0.2 5.5 0.2 2.7 0.2 Features Extremely satisfactory linearity of the forward current transfer ? 3.1 0.1 ratio hFE High collector to base voltage VCBO Wide area of safe operation (ASO) Full-pack package which can be installed to the heat sink with 1.3

1.2. 2sd1535.pdf Size:73K _inchange_semiconductor

2SD1535
2SD1535

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD1535 DESCRIPTION ·With TO-220Fa package ·Wide area of safe operation ·High breakdown voltage ·DARLINGTON APPLICATIONS ·For high power amplification PINNING PIN DESCRIPTION 1 Base 2 Collector Fig.1 simplified outline (TO-220Fa) and symbol 3 Emitter Absolute maximum ratings(Ta=25?) SYMBOL P

 4.1. 2sd1536m.pdf Size:48K _rohm

2SD1535

4.2. 2sd1538.pdf Size:57K _panasonic

2SD1535
2SD1535

Power Transistors 2SD1538, 2SD1538A Silicon NPN epitaxial planar type Unit: mm 8.5 0.2 3.4 0.3 For low-voltage switching 6.0 0.5 1.0 0.1 Complementary to 2SB1070 and 2SB1070A Features Low collector to emitter saturation voltage VCE(sat) 1.5max. 1.1max. High-speed switching N type package enabling direct soldering of the radiating fin to 0.8 0.1 0.5max. the printed circuit boar

 4.3. 2sd1539.pdf Size:54K _panasonic

2SD1535
2SD1535

Power Transistors 2SD1539, 2SD1539A Silicon NPN epitaxial planar type For low-voltage switching Unit: mm Complementary to 2SB1071 and 2SB1071A 10.0 0.2 4.2 0.2 5.5 0.2 2.7 0.2 Features Low collector to emitter saturation voltage VCE(sat) High-speed switching ? 3.1 0.1 Full-pack package which can be installed to the heat sink with one screw Absolute Maximum Ratings (TC=25?C)

4.4. 2sd1531.pdf Size:266K _inchange_semiconductor

2SD1535
2SD1535

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SD1531 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 40V(Min) ·Good Linearity of hFE ·Low Collector Saturation Voltage APPLICATIONS ·Designed for AF output amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25?) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 50 V

 4.5. 2sd1530.pdf Size:273K _inchange_semiconductor

2SD1535
2SD1535

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SD1530 DESCRIPTION ·Low Collector Saturation Voltage : VCE(sat)= 0.5V(Max)@ IC= 2A ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 80V (Min) ·Good Linearity of hFE ·High Speed Switching APPLICATIONS ·Designed for power amplifier,power switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=2

Otros transistores... 2N3187 , 2N3188 , 2N3189 , 2N319 , 2N3190 , 2N3191 , 2N3192 , 2N3193 , TIP122 , 2N3195 , 2N3196 , 2N3197 , 2N3198 , 2N3199 , 2N32 , 2N320 , 2N3200 .

 
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