2SD1540
. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 2SD1540
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 60
W
Tensión colector-base (Vcb): 100
V
Corriente del colector DC máxima (Ic): 6
A
Temperatura operativa máxima (Tj): 150
°C
CARACTERÍSTICAS ELÉCTRICAS
Ganancia de corriente contínua (hfe): 800
Paquete / Cubierta:
TO3
Búsqueda de reemplazo de transistor bipolar 2SD1540
2SD1540
Datasheet (PDF)
..1. Size:180K inchange semiconductor
2sd1540.pdf 
INCHANGE Semiconductorisc Silicon NPN Darlingtion Power Transistor 2SD1540DESCRIPTIONHigh DC current gain-h = 800 (Min) @ I = 0.5AFE CCollector-Emitter Breakdown Voltage-V = 100V(Min)(BR)CEOFast Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for general purpose power amplifier and switching
8.3. Size:31K wingshing
2sd1546.pdf
NPN TRIPLE DIFFUSED PLANAR SILICON TRANSISTOR 2SD1546COLOR TV HORIZONTAL OUTPUT APPLICATIONS(NO Damper Diode) 2-16E3A High Collector-Base Voltage(VCBO=1500V) High Speed Switching ABSOLUTE MAXIMUM RATINGS (Ta=25 ) Characteristic Symbol Rating Unit Collector-Base Voltage VCBO 1500 V Collector-Emitter Voltage VCEO 600 V Emitter-Base voltage VEBO 6 V Collector Current
8.4. Size:69K wingshing
2sd1545.pdf
NPN TRIPLE DIFFUSED2SD1545 PLANAR SILICON TRANSISTORCOLOR TV HORIZONTAL OUTPUTAPPLICATIONS(NO Damper Diode) High Collector-Base Voltage(VCBO=1500V) 2-16E3A High Speed Switching ABSOLUTE MAXIMUM RATINGS (T =25)ACharacteristic Symbol Rating Unit Collector-Base Voltage VCBO 1500 V Collector-Emitter Voltage VCEO 800 V Emitter-Base voltage VEBO 6 V Collector
8.5. Size:70K wingshing
2sd1547.pdf
NPN TRIPLE DIFFUSED2SD1547 PLANAR SILICON TRANSISTORCOLOR TV HORIZONTAL OUTPUTAPPLICATIONS(NO Damper Diode) High Collector-Base Voltage(VCBO=1500V) 2-16E3A High Speed Switching ABSOLUTE MAXIMUM RATINGS (T =25)ACharacteristic Symbol Rating Unit Collector-Base Voltage VCBO 1500 V Collector-Emitter Voltage VCEO 800 V Emitter-Base voltage VEBO 6 V Collector
8.6. Size:215K inchange semiconductor
2sd1546.pdf
isc Silicon NPN Power Transistor 2SD1546DESCRIPTIONHigh Breakdown Voltage-: V = 1500V (Min)CBOHigh Switching SpeedLow Saturation VoltageMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSColor TV horizontal output applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltage 1500
8.7. Size:215K inchange semiconductor
2sd1545.pdf
isc Silicon NPN Power Transistor 2SD1545DESCRIPTIONHigh Breakdown Voltage-: V = 1500V (Min)CBOHigh Switching SpeedLow Saturation VoltageMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSColor TV horizontal output applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltage 1500
8.8. Size:190K inchange semiconductor
2sd1549.pdf
isc Product Specificationisc Silicon NPN Power Transistor 2SD1549DESCRIPTIONCollector-Emitter Sustaining Voltage-: V = 800V (Min)CEO(SUS)High Switching SpeedLow Saturation VoltageMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in horizontal deflection circuits ofcolor TV receivers.ABSOLUTE MAXIMUM
8.9. Size:215K inchange semiconductor
2sd1544.pdf
isc Silicon NPN Power Transistor 2SD1544DESCRIPTIONHigh Breakdown Voltage-: V = 1500V (Min)CBOHigh Switching SpeedLow Saturation VoltageMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSColor TV horizontal output applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltage 1500
8.10. Size:202K inchange semiconductor
2sd1542.pdf
INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SD1542DESCRIPTIONHigh Breakdown Voltage-: V = 1500V (Min)CBOHigh Switching SpeedLow Saturation VoltageMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for horizontal deflection output applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VA
8.11. Size:215K inchange semiconductor
2sd1543.pdf
isc Silicon NPN Power Transistor 2SD1543DESCRIPTIONHigh Breakdown Voltage-: V = 1500V (Min)CBOHigh Switching SpeedLow Saturation VoltageMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSColor TV horizontal output applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltage 1500
8.12. Size:215K inchange semiconductor
2sd1547.pdf
isc Silicon NPN Power Transistor 2SD1547DESCRIPTIONHigh Breakdown Voltage-: V = 1500V (Min)CBOHigh Switching SpeedLow Saturation VoltageMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSColor TV horizontal output applications.Switching regulator output applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAME
8.13. Size:210K inchange semiconductor
2sd1541.pdf
isc Silicon NPN Power Transistor 2SD1541DESCRIPTIONCollector-Base Breakdown Voltage-: V = 1300V (Min)CBOHigh Switching SpeedBuilt-in Damper DiodeMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for horizontal deflection output applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV
8.14. Size:215K inchange semiconductor
2sd1548.pdf
isc Silicon NPN Power Transistor 2SD1548DESCRIPTIONHigh Breakdown Voltage-: V = 1400V (Min)CBOHigh Switching SpeedLow Saturation VoltageMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSColor TV horizontal output applications.Switching regulator output applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAME
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