2SD1549 Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 2SD1549 📄📄
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 50 W
Tensión colector-base (Vcb): 1000 V
Corriente del colector DC máxima (Ic): 5 A
Temperatura operativa máxima (Tj): 175 °C
CARACTERÍSTICAS ELÉCTRICAS
Ganancia de corriente contínua (hFE): 12
Encapsulados: TO218
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2SD1549 datasheet
..1. Size:190K inchange semiconductor
2sd1549.pdf 
isc Product Specification isc Silicon NPN Power Transistor 2SD1549 DESCRIPTION Collector-Emitter Sustaining Voltage- V = 800V (Min) CEO(SUS) High Switching Speed Low Saturation Voltage Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in horizontal deflection circuits of color TV receivers. ABSOLUTE MAXIMUM
8.3. Size:31K wingshing
2sd1546.pdf
NPN TRIPLE DIFFUSED PLANAR SILICON TRANSISTOR 2SD1546 COLOR TV HORIZONTAL OUTPUT APPLICATIONS(NO Damper Diode) 2-16E3A High Collector-Base Voltage(VCBO=1500V) High Speed Switching ABSOLUTE MAXIMUM RATINGS (Ta=25 ) Characteristic Symbol Rating Unit Collector-Base Voltage VCBO 1500 V Collector-Emitter Voltage VCEO 600 V Emitter-Base voltage VEBO 6 V Collector Current
8.4. Size:69K wingshing
2sd1545.pdf
NPN TRIPLE DIFFUSED 2SD1545 PLANAR SILICON TRANSISTOR COLOR TV HORIZONTAL OUTPUT APPLICATIONS(NO Damper Diode) High Collector-Base Voltage(VCBO=1500V) 2-16E3A High Speed Switching ABSOLUTE MAXIMUM RATINGS (T =25 ) A Characteristic Symbol Rating Unit Collector-Base Voltage VCBO 1500 V Collector-Emitter Voltage VCEO 800 V Emitter-Base voltage VEBO 6 V Collector
8.5. Size:70K wingshing
2sd1547.pdf
NPN TRIPLE DIFFUSED 2SD1547 PLANAR SILICON TRANSISTOR COLOR TV HORIZONTAL OUTPUT APPLICATIONS(NO Damper Diode) High Collector-Base Voltage(VCBO=1500V) 2-16E3A High Speed Switching ABSOLUTE MAXIMUM RATINGS (T =25 ) A Characteristic Symbol Rating Unit Collector-Base Voltage VCBO 1500 V Collector-Emitter Voltage VCEO 800 V Emitter-Base voltage VEBO 6 V Collector
8.6. Size:215K inchange semiconductor
2sd1546.pdf
isc Silicon NPN Power Transistor 2SD1546 DESCRIPTION High Breakdown Voltage- V = 1500V (Min) CBO High Switching Speed Low Saturation Voltage Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Color TV horizontal output applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage 1500
8.7. Size:215K inchange semiconductor
2sd1545.pdf
isc Silicon NPN Power Transistor 2SD1545 DESCRIPTION High Breakdown Voltage- V = 1500V (Min) CBO High Switching Speed Low Saturation Voltage Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Color TV horizontal output applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage 1500
8.8. Size:215K inchange semiconductor
2sd1544.pdf
isc Silicon NPN Power Transistor 2SD1544 DESCRIPTION High Breakdown Voltage- V = 1500V (Min) CBO High Switching Speed Low Saturation Voltage Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Color TV horizontal output applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage 1500
8.9. Size:202K inchange semiconductor
2sd1542.pdf
INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SD1542 DESCRIPTION High Breakdown Voltage- V = 1500V (Min) CBO High Switching Speed Low Saturation Voltage Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for horizontal deflection output applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VA
8.10. Size:180K inchange semiconductor
2sd1540.pdf
INCHANGE Semiconductor isc Silicon NPN Darlingtion Power Transistor 2SD1540 DESCRIPTION High DC current gain- h = 800 (Min) @ I = 0.5A FE C Collector-Emitter Breakdown Voltage- V = 100V(Min) (BR)CEO Fast Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for general purpose power amplifier and switching
8.11. Size:215K inchange semiconductor
2sd1543.pdf
isc Silicon NPN Power Transistor 2SD1543 DESCRIPTION High Breakdown Voltage- V = 1500V (Min) CBO High Switching Speed Low Saturation Voltage Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Color TV horizontal output applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage 1500
8.12. Size:215K inchange semiconductor
2sd1547.pdf
isc Silicon NPN Power Transistor 2SD1547 DESCRIPTION High Breakdown Voltage- V = 1500V (Min) CBO High Switching Speed Low Saturation Voltage Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Color TV horizontal output applications. Switching regulator output applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAME
8.13. Size:210K inchange semiconductor
2sd1541.pdf
isc Silicon NPN Power Transistor 2SD1541 DESCRIPTION Collector-Base Breakdown Voltage- V = 1300V (Min) CBO High Switching Speed Built-in Damper Diode Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for horizontal deflection output applications . ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V
8.14. Size:215K inchange semiconductor
2sd1548.pdf
isc Silicon NPN Power Transistor 2SD1548 DESCRIPTION High Breakdown Voltage- V = 1400V (Min) CBO High Switching Speed Low Saturation Voltage Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Color TV horizontal output applications. Switching regulator output applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAME
Otros transistores... 2SD1541, 2SD1542, 2SD1543, 2SD1544, 2SD1545, 2SD1546, 2SD1547, 2SD1548, 2SA1015, 2SD155, 2SD1550, 2SD1551, 2SD1552, 2SD1553, 2SD1554, 2SD1555, 2SD1556
