2SD1559
. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 2SD1559
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 100
W
Tensión colector-base (Vcb): 100
V
Tensión colector-emisor (Vce): 100
V
Tensión emisor-base (Veb): 7
V
Corriente del colector DC máxima (Ic): 20
A
Temperatura operativa máxima (Tj): 150
°C
CARACTERÍSTICAS ELÉCTRICAS
Ganancia de corriente contínua (hfe): 12000
Paquete / Cubierta:
TO3P
Búsqueda de reemplazo de transistor bipolar 2SD1559
2SD1559
Datasheet (PDF)
..1. Size:36K hitachi
2sd1559.pdf 
2SD1559Silicon NPN Triple DiffusedApplicationLow frequency power amplifier complementary pair with 2SB1079OutlineTO-3P211. Base2. Collector(Flange)3. Emitter 3 k 400 (Typ) (Typ)13232SD1559Absolute Maximum Ratings (Ta = 25C)Item Symbol Ratings UnitCollector to base voltage VCBO 100 VCollector to emitter voltage VCEO 100 VEmitter to base voltag
..2. Size:220K inchange semiconductor
2sd1559.pdf
INCHANGE Semiconductorisc Silicon NPN Darlington Power Transistor 2SD1559DESCRIPTIONHigh DC Current Gain: h = 1000(Min.)@ I = 10A, V = 3VFE C CEHigh Collector-Emitter Sustaining Voltage-: V = 100V(Min)CEO(SUS)Complement to Type 2SB1079Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for low frequency power
8.1. Size:69K wingshing
2sd1556.pdf
NPN TRIPLE DIFFUSED2SD1556 PLANAR SILICON TRANSISTORCOLOR TV HORIZONTAL OUTPUTAPPLICATIONS(Damper Diode BUILT IN) High Collector-Base Voltage(VCBO=1500V) 2-16E3A High Speed Switching ABSOLUTE MAXIMUM RATINGS (T =25)ACharacteristic Symbol Rating Unit Collector-Base Voltage VCBO 1500 V Collector-Emitter Voltage VCEO 1500 V Emitter-Base voltage VEBO 6 V Co
8.2. Size:29K wingshing
2sd1555.pdf
NPN TRIPLE DIFFUSED2SD1555 PLANAR SILICON TRANSISTORCOLOR TV HORIZONTAL OUTPUTAPPLICATIONS(Damper Diode BUILT IN) High Collector-Base Voltage(VCBO=1500V) 2-16E3A High Speed Switching ABSOLUTE MAXIMUM RATINGS (T =25oC)ACharacteristic Symbol Rating Unit Collector-Base Voltage VCBO 1500 V Collector-Emitter Voltage VCEO 1500 V Emitter-Base voltage VEBO 6 V Collector Current
8.3. Size:29K wingshing
2sd1554.pdf
NPN TRIPLE DIFFUSED2SD1554 PLANAR SILICON TRANSISTORCOLOR TV HORIZONTAL OUTPUTAPPLICATIONS(Damper Diode BUILT IN) High Collector-Base Voltage(VCBO=1500V) 2-16E3A High Speed Switching ABSOLUTE MAXIMUM RATINGS (T =25oC)ACharacteristic Symbol Rating Unit Collector-Base Voltage VCBO 1500 V Collector-Emitter Voltage VCEO 1500 V Emitter-Base voltage VEBO 6 V Collector Current
8.4. Size:76K jmnic
2sd1556.pdf
Product Specification www.jmnic.com Silicon NPN Power Transistors 2SD1556 DESCRIPTION With TO-3P(H)IS package Built-in damper diode High voltage ,high speed Low collector saturation voltage APPLICATIONS For color TV horizontal output applications PINNING PIN DESCRIPTION1 Base 2 Collector3 EmitterFig.1 simplified outline (TO-3P(H)IS) and symbol ABSOLUTE
8.5. Size:77K jmnic
2sd1555.pdf
Product Specification www.jmnic.com Silicon NPN Power Transistors 2SD1555 DESCRIPTION With TO-3P(H)IS package Built-in damper diode High voltage ,high speed Low collector saturation voltage APPLICATIONS For color TV horizontal output applications PINNING PIN DESCRIPTION1 Base 2 Collector3 EmitterFig.1 simplified outline (TO-3P(H)IS) and symbol ABSOLUTE
8.6. Size:76K jmnic
2sd1553.pdf
Product Specification www.jmnic.com Silicon NPN Power Transistors 2SD1553 DESCRIPTION With TO-3P(H)IS package Built-in damper diode High voltage ,high speed Low collector saturation voltage APPLICATIONS For color TV horizontal output applications PINNING PIN DESCRIPTION1 Base 2 Collector3 EmitterFig.1 simplified outline (TO-3P(H)IS) and symbol ABSOLUTE
8.7. Size:78K jmnic
2sd1554.pdf
Product Specification www.jmnic.com Silicon NPN Power Transistors 2SD1554 DESCRIPTION With TO-3P(H)IS package Built-in damper diode High voltage ,high speed Low collector saturation voltage APPLICATIONS For color TV horizontal output applications PINNING PIN DESCRIPTION1 Base 2 Collector3 EmitterFig.1 simplified outline (TO-3P(H)IS) and symbol ABSOLUTE
8.8. Size:181K inchange semiconductor
2sd155.pdf
INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SD155DESCRIPTIONLow Collector Saturation Voltage: V = 1.0V(Max)@I = 2ACE(sat) CCollector-Emitter Breakdown Voltage-: V = 80V(Min)(BR) CEOWide Area of Safe OperationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for low frequency power amplifier appli
8.9. Size:205K inchange semiconductor
2sd1550.pdf
isc Product Specificationisc Silicon NPN Power Transistor 2SD1550DESCRIPTIONHigh Breakdown Voltage-: V = 1000V (Min)CBOHigh Switching SpeedLow Saturation VoltageMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSColor TV horizontal output applications.Switching regulator output applications.ABSOLUTE MAXIMUM RATINGS(
8.10. Size:204K inchange semiconductor
2sd1552.pdf
isc Product Specificationisc Silicon NPN Power Transistor 2SD1552DESCRIPTIONHigh Breakdown Voltage-: V = 1500V (Min)CBOHigh Switching SpeedLow Saturation VoltageMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSColor TV horizontal output applications.Switching regulator output applications.ABSOLUTE MAXIMUM RATINGS(
8.11. Size:205K inchange semiconductor
2sd1558.pdf
INCHANGE Semiconductorisc Silicon NPN Darlington Power Transistor 2SD1558DESCRIPTION High DC Current Gain-: h = 1000(Min)@ I = 2AFE CCollector-Emitter Sustaining Voltage-: V = 60V(Min)CEO(SUS)Low Collector-Emitter Saturation Voltage-: V = 1.5V(Max)@ I = 2ACE(sat) CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONS
8.12. Size:116K inchange semiconductor
2sd1556.pdf
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD1556 DESCRIPTION With TO-3P(H)IS package Built-in damper diode High voltage ,high speed Low collector saturation voltage APPLICATIONS For color TV horizontal output applications PINNING PIN DESCRIPTION1 Base 2 CollectorFig.1 simplified outline (TO-3P(H)IS) and symbol 3 Emitter
8.13. Size:213K inchange semiconductor
2sd1555.pdf
isc Silicon NPN Power Transistor 2SD1555DESCRIPTIONHigh Breakdown Voltage-: V = 1500V (Min)CBOHigh Switching SpeedLow Saturation VoltageBuilt-in Damper DiodeMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for color TV horizontal output applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VAL
8.14. Size:214K inchange semiconductor
2sd1553.pdf
isc Silicon NPN Power Transistor 2SD1553DESCRIPTIONHigh Breakdown Voltage-: V = 1500V (Min)CBOHigh Switching SpeedLow Saturation VoltageBuilt-in Damper DiodeMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for color TV horizontal output applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VAL
8.15. Size:204K inchange semiconductor
2sd1551.pdf
isc Product Specificationisc Silicon NPN Power Transistor 2SD1551DESCRIPTIONHigh Breakdown Voltage-: V = 1500V (Min)CBOHigh Switching SpeedLow Saturation VoltageMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSColor TV horizontal output applications.Switching regulator output applications.ABSOLUTE MAXIMUM RATINGS(
8.16. Size:214K inchange semiconductor
2sd1554.pdf
isc Silicon NPN Power Transistor 2SD1554DESCRIPTIONHigh Breakdown Voltage-: V = 1500V (Min)CBOHigh Switching SpeedLow Saturation VoltageBuilt-in Damper DiodeMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for color TV horizontal output applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VAL
Otros transistores... 2N3192
, 2N3193
, 2N3194
, 2N3195
, 2N3196
, 2N3197
, 2N3198
, 2N3199
, BC327
, 2N320
, 2N3200
, 2N3201
, 2N3202
, 2N3203
, 2N3204
, 2N3205
, 2N3206
.
