2SD1575 Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 2SD1575
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 40 W
Tensión colector-base (Vcb): 1500 V
Corriente del colector DC máxima (Ic): 2.5 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Ganancia de corriente contínua (hFE): 15
Encapsulados: TO220
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2SD1575 datasheet
..1. Size:209K inchange semiconductor
2sd1575.pdf 
isc Silicon NPN Power Transistor 2SD1575 DESCRIPTION High Breakdown Voltage- V = 1200V (Min) CBO High Switching Speed High Reliability Wide Area of Safe Operation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for horizontal deflection output applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER V
8.2. Size:93K panasonic
2sd1576.pdf
This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer
8.4. Size:138K wingshing
2sd1577.pdf
Silicon Diffused Power Transistor 2SD1577 GENERAL DESCRIPTION Highvoltage,high-speed switching npn transistors in a plastic envelope with integrated efficiency diode,prim- arily for use in switching power circuites of colour television receivers TOP-3Fa QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS TYP MAX UNIT Collector-emitter voltage peak value V = 0V BE V - 1500 V CESM Co
8.5. Size:180K inchange semiconductor
2sd157.pdf
INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SD157 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 300V(Min) (BR)CEO Low Collector-Emitter Saturation Voltage- V = 2.0V(Max) @I = 50mA CE(sat) C Wide Area of Safe Operation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in line-operated co
8.6. Size:210K inchange semiconductor
2sd1577.pdf
isc Silicon NPN Power Transistor 2SD1577 DESCRIPTION High Breakdown Voltage- V = 1300V (Min) CBO High Switching Speed High Reliability Wide Area of Safe Operation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for horizontal output applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT
8.7. Size:209K inchange semiconductor
2sd1571.pdf
isc Silicon NPN Power Transistor 2SD1571 DESCRIPTION High Collector-Base Breakdown Voltage- V = 800V (Min) (BR)CBO High Switching Speed Low Collector Saturation Voltage- V = 1.0V(Max.)@ I = 0.5A CE(sat) C Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high voltage switching applications. ABSOLUTE MAXIMUM RA
8.9. Size:209K inchange semiconductor
2sd1576.pdf
isc Silicon NPN Power Transistor 2SD1576 DESCRIPTION High Collector-Base Breakdown Voltage- V = 1300V (Min.) (BR)CBO High Switching Speed Wide Area of Safe Operation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for horizontal deflection output applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER
Otros transistores... 2SD1567, 2SD1568, 2SD1569, 2SD157, 2SD1571, 2SD1572, 2SD1573, 2SD1574, D667, 2SD1576, 2SD1577, 2SD1578, 2SD1579, 2SD157F, 2SD158, 2SD1580, 2SD1581
