2SD1579 Todos los transistores

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 2sd1579.pdf

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 2sd1576.pdf

This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer

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 2sd1571.pdf

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 2sd1577.pdf

Silicon Diffused Power Transistor 2SD1577 GENERAL DESCRIPTION Highvoltage,high-speed switching npn transistors in a plastic envelope with integrated efficiency diode,prim- arily for use in switching power circuites of colour television receivers TOP-3Fa QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS TYP MAX UNIT Collector-emitter voltage peak value V = 0V BE V - 1500 V CESM Co

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 2sd157.pdf

INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SD157 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 300V(Min) (BR)CEO Low Collector-Emitter Saturation Voltage- V = 2.0V(Max) @I = 50mA CE(sat) C Wide Area of Safe Operation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in line-operated co

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 2sd1577.pdf

isc Silicon NPN Power Transistor 2SD1577 DESCRIPTION High Breakdown Voltage- V = 1300V (Min) CBO High Switching Speed High Reliability Wide Area of Safe Operation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for horizontal output applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT

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 2sd1571.pdf

isc Silicon NPN Power Transistor 2SD1571 DESCRIPTION High Collector-Base Breakdown Voltage- V = 800V (Min) (BR)CBO High Switching Speed Low Collector Saturation Voltage- V = 1.0V(Max.)@ I = 0.5A CE(sat) C Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high voltage switching applications. ABSOLUTE MAXIMUM RA

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 2sd1575.pdf

isc Silicon NPN Power Transistor 2SD1575 DESCRIPTION High Breakdown Voltage- V = 1200V (Min) CBO High Switching Speed High Reliability Wide Area of Safe Operation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for horizontal deflection output applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER V

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 2sd1572.pdf

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 2sd1576.pdf

isc Silicon NPN Power Transistor 2SD1576 DESCRIPTION High Collector-Base Breakdown Voltage- V = 1300V (Min.) (BR)CBO High Switching Speed Wide Area of Safe Operation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for horizontal deflection output applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER