2SD1580 Todos los transistores

 ..1. Size:44K  rohm
 2sd1580.pdf

 ..2. Size:214K  inchange semiconductor
 2sd1580.pdf

isc Silicon NPN Power Transistor 2SD1580 DESCRIPTION Low Collector Saturation Voltage V = 1.0V(Max.)@ I = 4A CE(sat) C High Collector Power Dissipation Good Linearity of h FE Wide Area of Safe Operation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for low frequency power amplifier applications. ABSOLUTE MAXIM

 8.1. Size:102K  nec
 2sd1588.pdf

DATA SHEET SILICON POWER TRANSISTOR 2SD1588 NPN SILICON EPITAXIAL TRANSISTOR FOR LOW-FREQUENCY POWER AMPLIFIERS AND LOW-SPEED SWITCHING FEATURES PACKAGE DRAWING (UNIT mm) Mold package that does not require an insulating board or insulation bushing Large current capacity in small dimension IC(DC) = 7 A Low collector saturation voltage VCE(sat) = 0.5 V MAX. (@5 A) Id

 8.2. Size:166K  nec
 2sd1585.pdf

 8.3. Size:104K  nec
 2sd1582.pdf

DATA SHEET SILICON TRANSISTOR 2SD1582 NPN SILICON EPITAXIAL TRANSISTOR FOR LOW-FREQUENCY POWER AMPLIFIERS The 2SD1582 is a single type super high hFE transistor and low PACKAGE DRAWING (UNIT mm) collector saturation voltage and high voltage. This transistor is available for broad applications as variety of drives. FEATURES Ultra high hFE hFE = 800 to 3200 (@ VCE = 5.0 V, IC = 300

 8.4. Size:225K  nec
 2sd1584.pdf

 8.5. Size:104K  nec
 2sd1581.pdf

DATA SHEET SILICON TRANSISTOR 2SD1581 NPN SILICON EPITAXIAL TRANSISTOR FOR LOW-FREQUENCY POWER AMPLIFIERS The 2SD1581 is a single type super high hFE transistor and low PACKAGE DRAWING (UNIT mm) collector saturation voltage and low power loss. This transistor is ideal for use in high current drives such as mortars, relays, and ramps. FEATURES Ultra high hFE hFE = 800 to 3200 (@

 8.6. Size:220K  nec
 2sd1583.pdf

 8.7. Size:65K  no
 2sd1589.pdf

 8.8. Size:28K  no
 2sd1586.pdf

 8.9. Size:117K  jmnic
 2sd1589.pdf

Product Specification www.jmnic.com Silicon Power Transistors 2SD1589 DESCRIPTION With TO-220Fa package DARLINGTON Complement to type 2SB1098 Low speed switching APPLICATIONS Low frequency power amplifier Low speed switching industrial use PINNING PIN DESCRIPTION 1 Base 2 Collector 3 Emitter Fig.1 simplified outline (TO-220Fa) and symbol ABSOLUTE MAXIM

 8.10. Size:113K  jmnic
 2sd1588.pdf

Product Specification www.jmnic.com Silicon Power Transistors 2SD1588 DESCRIPTION With TO-220Fa package Complement to type 2SB1097 Low speed switching APPLICATIONS For low frequency power amplifier applications PINNING PIN DESCRIPTION 1 Base 2 Collector 3 emitter Fig.1 simplified outline (TO-220Fa) and symbol ABSOLUTE MAXIMUM RATINGS AT Tc=25 SYMBOL PARA

 8.11. Size:116K  jmnic
 2sd1585.pdf

Product Specification www.jmnic.com Silicon NPN Power Transistors 2SD1585 DESCRIPTION With TO-220Fa package VCEO 60V;VEBO 7V;IC(DC) 3.0A Complement to type 2SB1094 APPLICATIONS For use in audio frequency power amplifier and general purpose applications PINNING PIN DESCRIPTION 1 Base 2 Collector 3 Emitter Fig.1 simplified outline (TO-220Fa) and symbol

 8.12. Size:227K  tysemi
 2sd1583-z.pdf

SMD Type SMD Type SMD Type Transistors SMD Type Transistors Product specification Product specification 2SD1583-Z TO-252 Unit mm +0.15 +0.1 6.50-0.15 2.30-0.1 Features +0.2 +0.8 5.30-0.2 0.50-0.7 Low VCE(sat). High hFE. 0.127 +0.1 max 0.80-0.1 +0.1 2.3 0.60-0.1 1 Base +0.15 4.60-0.15 2 Collector 3 Emitter Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit

 8.13. Size:227K  tysemi
 2sd1584-z.pdf

SMD Type SMD Type SMD Type Transistors SMD Type Transistors Product specification Product specification 2SD1584-Z TO-252 Unit mm +0.15 +0.1 6.50-0.15 2.30-0.1 +0.2 +0.8 5.30-0.2 0.50-0.7 Features Low VCE(sat). High hFE. 0.127 +0.1 max 0.80-0.1 +0.1 2.3 0.60-0.1 1 Base +0.15 4.60-0.15 2 Collector 3 Emitter Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit

 8.14. Size:217K  inchange semiconductor
 2sd1589.pdf

isc Silicon NPN Darlington Power Transistor 2SD1589 DESCRIPTION Collector-Emitter Saturation Voltage- V = 1.5V(Max) @I = 2A CE(sat) C High DC Current Gain h = 2000(Min) @ I = 2A FE C Complement to Type 2SB1098 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for audio frequency power amplifier and low speed switc

 8.15. Size:274K  inchange semiconductor
 2sd1587.pdf

isc Silicon NPN Power Transistor 2SD1587 DESCRIPTION High Collector Current I = 2.0A C Low Collector Saturation Voltage V = 1.0V(Max)@I = 500mA CE(sat) C Complement to Type 2SB1096 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for power supplies or a variety of drives in audio and other equipment. ABSOLUTE MAX

 8.16. Size:215K  inchange semiconductor
 2sd1588.pdf

isc Silicon NPN Power Transistor 2SD1588 DESCRIPTION Large Current Capacity- I = 7A C Low Collector Saturation Voltage V = 0.5V(Max)@ I = 5A CE(sat) C Collector-Emitter Sustaining Voltage- V = 60V (Min) CEO(SUS) Complement to Type 2SB1097 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for low frequency power

 8.17. Size:216K  inchange semiconductor
 2sd1585.pdf

isc Silicon NPN Power Transistor 2SD1585 DESCRIPTION High Collector Current I = 3A C Low Collector Saturation Voltage V = 1.5V(Max)@I = 2A CE(sat) C Complement to Type 2SB1094 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for power supplies or a variety of drives in audio and other equipment. ABSOLUTE MAXIMUM