2SD1591 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Product Specification www.jmnic.com Silicon NPN Power Transistors 2SD1591 DESCRIPTION With TO-220Fa package DARLINGTON Complement to type 2SB1100 APPLICATIONS Low frequency power amplification Low speed power switching applications PINNING PIN DESCRIPTION1 Base 2 Collector3 EmitterFig.1 simplified outline (TO-220Fa) and symbol ABSOLUTE MAXIMUM RATINGS A

isc Silicon NPN Darlington Power Transistor 2SD1591DESCRIPTIONCollector-Emitter Saturation Voltage-: V = 1.5V(Max) @I = 10ACE(sat) CHigh DC Current Gain: h = 1000(Min) @ I = 10AFE CComplement to Type 2SB1100Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for audio frequency power amplifier and lowspeed hig

DATA SHEETDARLINGTON POWER TRANSISTOR2SD1592NPN SILICON TRIPLE DIFFUSED TRANSISTOR (DARLINGTON CONNECTION)FOR HIGH-VOLTAGE LOW-SPEED SWITCHINGFEATURES PACKAGE DRAWING (UNIT: mm) High DC current gain due to Darlington connection Low collector saturation Reverse deterrence type Ideal for use in devices such as pulse motor drivers and relaydrivers of PC terminals, a

Product Specification www.jmnic.com Silicon Power Transistors 2SD1594 DESCRIPTION With TO-220Fa package APPLICATIONS Low frequency power amplifier High speed switching industrial use PINNING PIN DESCRIPTION1 Base 2 Collector3 EmitterFig.1 simplified outline (TO-220Fa) and symbol ABSOLUTE MAXIMUM RATINGS AT Tc=25 SYMBOL PARAMETER CONDITIONS VALUE UNITVCBO

isc Silicon NPN Darlington Power Transistor 2SD1590DESCRIPTIONCollector-Emitter Saturation Voltage-: V = 1.5V(Max) @I = 3ACE(sat) CHigh DC Current Gain: h = 2000(Min) @ I = 3AFE CComplement to Type 2SB1099Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for audio frequency power amplifier and lowspeed switc

INCHANGE Semiconductorisc Silicon NPN Darlington Power Transistor 2SD1592DESCRIPTIONHigh Collector-Emitter Breakdown Voltage-: V = 300V(Min)(BR)CEOHigh DC Current Gain: h = 400(Min) @ I = 2A, V = 2VFE C CELow Collector-Emitter Saturation Voltage-: V = 1.5V(Max)@ I = 2ACE(sat) CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAP

isc Silicon NPN Power Transistor 2SD1594DESCRIPTIONGood Linearity of hFECollector-Emitter Breakdown Voltage: V = 100V(Min)(BR)CEOLow Collector Saturation VoltageMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high speed switching industrial use.ABSOLUTE MAXIMUM RATINGS(Ta=25)SYMBOL PARAMETER VALUE U

INCHANGE Semiconductorisc Silicon NPN Darlington Power Transistor 2SD1599DESCRIPTIONHigh DC Current Gain-: h = 1000(Min)@ I = 2AFE CCollector-Emitter Sustaining Voltage-: V = 80V(Min)CEO(SUS)Low Collector-Emitter Saturation Voltage-: V = 2.0V(Max)@ I = 3ACE(sat) CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONS

isc Silicon NPN Darlington Power Transistor 2SD1597DESCRIPTIONCollector Current -I = 30ACHigh DC Current Gain-: h = 1000(Min)@ I = 15AFE CLow Collector Saturation VoltageMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for audio frequency power amplifier and lowspeed high current switching industrial use.AB