2SD1600
. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 2SD1600
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 40
W
Tensión colector-base (Vcb): 80
V
Tensión colector-emisor (Vce): 80
V
Tensión emisor-base (Veb): 7
V
Corriente del colector DC máxima (Ic): 8
A
Temperatura operativa máxima (Tj): 150
°C
CARACTERÍSTICAS ELÉCTRICAS
Ganancia de corriente contínua (hfe): 15000
Paquete / Cubierta:
TO220
Búsqueda de reemplazo de transistor bipolar 2SD1600
2SD1600
Datasheet (PDF)
..1. Size:189K inchange semiconductor
2sd1600.pdf 
INCHANGE Semiconductorisc Silicon NPN Darlington Power Transistor 2SD1600DESCRIPTIONHigh DC Current Gain-: h = 1000(Min)@ I = 4AFE CCollector-Emitter Sustaining Voltage-: V = 80V(Min)CEO(SUS)Low Collector-Emitter Saturation Voltage-: V = 2.0V(Max)@ I = 4ACE(sat) CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONS
8.1. Size:84K utc
2sd1609.pdf
UTC 2SD1609 NPN EPITAXIAL SILICON TRANSISTOR NPN EPITAXIAL PLANAR TRANSISTOR FEATURES * Low frequency high voltage amplifier 1TO-1261:EMITTER 2:COLLECTOR 3:BASEABSOLUTE MAXIMUM RATINGS (Ta=25C, unless otherwise specified) PARAMETER SYMBOL MIN MAX UNITCollector-Base Voltage BVCBO 160 VCollector-Emitter Voltage BVCEO 160 VEmitter-Base Voltage BVEBO 5 VCollector Curre
8.3. Size:35K hitachi
2sd1606.pdf
2SD1606Silicon NPN Triple DiffusedApplicationLow frequency power amplifierOutlineTO-220AB211. BaseID2. Collector(Flange)13. Emitter 2.6 k 160 23(Typ) (Typ)32SD1606Absolute Maximum Ratings (Ta = 25C)Item Symbol Ratings UnitCollector to base voltage VCBO 120 VCollector to emitter voltage VCEO 120 VEmitter to base voltage VEBO 7VCollector cu
8.4. Size:32K hitachi
2sd1609 2sd1610.pdf
2SD1609, 2SD1610Silicon NPN EpitaxialApplicationLow frequency high voltage amplifier complementary pair with 2SB1109 and 2SB1110OutlineTO-126 MOD1. Emitter2. Collector3. Base123Absolute Maximum Ratings (Ta = 25C)RatingsItem Symbol 2SD1609 2SD1610 UnitCollector to base voltage VCBO 160 200 VCollector to emitter voltage VCEO 160 200 VEmitter to base voltage VEB
8.6. Size:187K inchange semiconductor
2sd1607.pdf
INCHANGE Semiconductorisc Silicon NPN Darlington Power Transistor 2SD1607DESCRIPTIONHigh DC Current Gain-: h = 1000(Min)@ I = 5AFE CCollector-Emitter Sustaining Voltage-: V = 120V(Min)CEO(SUS)Low Collector-Emitter Saturation Voltage-: V = 2.0V(Max)@ I = 5ACE(sat) CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONS
8.7. Size:210K inchange semiconductor
2sd1601.pdf
isc Silicon NPN Darlington Power Transistor 2SD1601DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 60V(Min)(BR)CEOHigh DC Current Gain: h = 1000(Min) @I = 2AFE CComplement to Type 2SB1101Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for low frequency power amplifiers applications.ABSOLUTE MAXIMUM RA
8.8. Size:212K inchange semiconductor
2sd1608.pdf
isc Silicon NPN Darlington Power Transistor 2SD1608DESCRIPTIONCollector-Emitter Sustaining Voltage-: V = 120V(Min)CEO(SUS)High DC Current Gain: h = 1000(Min) @I = 4AFE CHigh Speed SwitchingMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for medium speed power switching applications.ABSOLUTE MAXIMUM RATINGS
8.9. Size:210K inchange semiconductor
2sd1602.pdf
isc Silicon NPN Darlington Power Transistor 2SD1602DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 80V(Min)(BR)CEOHigh DC Current Gain: h = 1000(Min) @I = 2AFE CComplement to Type 2SB1102Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for low frequency power amplifiers applications.ABSOLUTE MAXIMUM RA
8.10. Size:210K inchange semiconductor
2sd1606.pdf
isc Silicon NPN Darlington Power Transistor 2SD1606DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 120V(Min)(BR)CEOHigh DC Current Gain: h = 1000(Min) @I = 3AFE CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for low frequency power amplifiers applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PA
8.11. Size:211K inchange semiconductor
2sd1604.pdf
isc Silicon NPN Darlington Power Transistor 2SD1604DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 80V(Min)(BR)CEOHigh DC Current Gain: h = 1000(Min) @I = 4AFE CComplement to Type 2SB1104Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for low frequency power amplifiers applications.ABSOLUTE MAXIMUM RA
8.12. Size:193K inchange semiconductor
2sd1609.pdf
INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SD1609DESCRIPTIONHigh Collector-Emitter Breakdown Voltage-: V = 160V(Min)(BR)CEOGood Linearity of hFE100% avalanche testedComplement to Type 2SB1109Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for low frequency and high-voltage amplifierapplica
8.13. Size:210K inchange semiconductor
2sd1605.pdf
isc Silicon NPN Darlington Power Transistor 2SD1605DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 120V(Min)(BR)CEOHigh DC Current Gain: h = 1000(Min) @I = 1.5AFE CComplement to Type 2SB1105Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for low frequency power amplifiers applications.ABSOLUTE MAXIMUM
8.14. Size:211K inchange semiconductor
2sd1603.pdf
isc Silicon NPN Darlington Power Transistor 2SD1603DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 60V(Min)(BR)CEOHigh DC Current Gain: h = 1000(Min) @I = 4AFE CComplement to Type 2SB1103Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for low frequency power amplifiers applications.ABSOLUTE MAXIMUM RA
Otros transistores... 2N3200
, 2N3201
, 2N3202
, 2N3203
, 2N3204
, 2N3205
, 2N3206
, 2N3207
, B772
, 2N3209
, 2N3209AQF
, 2N3209CSM
, 2N3209DCSM
, 2N3209L
, 2N321
, 2N3210
, 2N3211
.
