2SD1601 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 2SD1601
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 40 W
Tensión colector-base (Vcb): 60 V
Tensión colector-emisor (Vce): 60 V
Tensión emisor-base (Veb): 7 V
Corriente del colector DC máxima (Ic): 4 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Ganancia de corriente contínua (hfe): 15000
Paquete / Cubierta: TO220
Búsqueda de reemplazo de transistor bipolar 2SD1601
2SD1601 Datasheet (PDF)
2sd1601.pdf
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isc Silicon NPN Darlington Power Transistor 2SD1601DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 60V(Min)(BR)CEOHigh DC Current Gain: h = 1000(Min) @I = 2AFE CComplement to Type 2SB1101Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for low frequency power amplifiers applications.ABSOLUTE MAXIMUM RA
2sd1609.pdf
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UTC 2SD1609 NPN EPITAXIAL SILICON TRANSISTOR NPN EPITAXIAL PLANAR TRANSISTOR FEATURES * Low frequency high voltage amplifier 1TO-1261:EMITTER 2:COLLECTOR 3:BASEABSOLUTE MAXIMUM RATINGS (Ta=25C, unless otherwise specified) PARAMETER SYMBOL MIN MAX UNITCollector-Base Voltage BVCBO 160 VCollector-Emitter Voltage BVCEO 160 VEmitter-Base Voltage BVEBO 5 VCollector Curre
2sd1606.pdf
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2SD1606Silicon NPN Triple DiffusedApplicationLow frequency power amplifierOutlineTO-220AB211. BaseID2. Collector(Flange)13. Emitter 2.6 k 160 23(Typ) (Typ)32SD1606Absolute Maximum Ratings (Ta = 25C)Item Symbol Ratings UnitCollector to base voltage VCBO 120 VCollector to emitter voltage VCEO 120 VEmitter to base voltage VEBO 7VCollector cu
2sd1609 2sd1610.pdf
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2SD1609, 2SD1610Silicon NPN EpitaxialApplicationLow frequency high voltage amplifier complementary pair with 2SB1109 and 2SB1110OutlineTO-126 MOD1. Emitter2. Collector3. Base123Absolute Maximum Ratings (Ta = 25C)RatingsItem Symbol 2SD1609 2SD1610 UnitCollector to base voltage VCBO 160 200 VCollector to emitter voltage VCEO 160 200 VEmitter to base voltage VEB
2sd1607.pdf
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INCHANGE Semiconductorisc Silicon NPN Darlington Power Transistor 2SD1607DESCRIPTIONHigh DC Current Gain-: h = 1000(Min)@ I = 5AFE CCollector-Emitter Sustaining Voltage-: V = 120V(Min)CEO(SUS)Low Collector-Emitter Saturation Voltage-: V = 2.0V(Max)@ I = 5ACE(sat) CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONS
2sd1608.pdf
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isc Silicon NPN Darlington Power Transistor 2SD1608DESCRIPTIONCollector-Emitter Sustaining Voltage-: V = 120V(Min)CEO(SUS)High DC Current Gain: h = 1000(Min) @I = 4AFE CHigh Speed SwitchingMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for medium speed power switching applications.ABSOLUTE MAXIMUM RATINGS
2sd1602.pdf
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isc Silicon NPN Darlington Power Transistor 2SD1602DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 80V(Min)(BR)CEOHigh DC Current Gain: h = 1000(Min) @I = 2AFE CComplement to Type 2SB1102Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for low frequency power amplifiers applications.ABSOLUTE MAXIMUM RA
2sd1606.pdf
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isc Silicon NPN Darlington Power Transistor 2SD1606DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 120V(Min)(BR)CEOHigh DC Current Gain: h = 1000(Min) @I = 3AFE CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for low frequency power amplifiers applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PA
2sd1604.pdf
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isc Silicon NPN Darlington Power Transistor 2SD1604DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 80V(Min)(BR)CEOHigh DC Current Gain: h = 1000(Min) @I = 4AFE CComplement to Type 2SB1104Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for low frequency power amplifiers applications.ABSOLUTE MAXIMUM RA
2sd1609.pdf
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INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SD1609DESCRIPTIONHigh Collector-Emitter Breakdown Voltage-: V = 160V(Min)(BR)CEOGood Linearity of hFE100% avalanche testedComplement to Type 2SB1109Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for low frequency and high-voltage amplifierapplica
2sd1605.pdf
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isc Silicon NPN Darlington Power Transistor 2SD1605DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 120V(Min)(BR)CEOHigh DC Current Gain: h = 1000(Min) @I = 1.5AFE CComplement to Type 2SB1105Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for low frequency power amplifiers applications.ABSOLUTE MAXIMUM
2sd1603.pdf
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isc Silicon NPN Darlington Power Transistor 2SD1603DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 60V(Min)(BR)CEOHigh DC Current Gain: h = 1000(Min) @I = 4AFE CComplement to Type 2SB1103Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for low frequency power amplifiers applications.ABSOLUTE MAXIMUM RA
2sd1600.pdf
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INCHANGE Semiconductorisc Silicon NPN Darlington Power Transistor 2SD1600DESCRIPTIONHigh DC Current Gain-: h = 1000(Min)@ I = 4AFE CCollector-Emitter Sustaining Voltage-: V = 80V(Min)CEO(SUS)Low Collector-Emitter Saturation Voltage-: V = 2.0V(Max)@ I = 4ACE(sat) CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONS
Otros transistores... 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .