2SD1606 Todos los transistores

 ..1. Size:35K  hitachi
 2sd1606.pdf

2SD1606 Silicon NPN Triple Diffused Application Low frequency power amplifier Outline TO-220AB 2 1 1. Base ID 2. Collector (Flange) 1 3. Emitter 2.6 k 160 2 3 (Typ) (Typ) 3 2SD1606 Absolute Maximum Ratings (Ta = 25 C) Item Symbol Ratings Unit Collector to base voltage VCBO 120 V Collector to emitter voltage VCEO 120 V Emitter to base voltage VEBO 7V Collector cu

 ..2. Size:210K  inchange semiconductor
 2sd1606.pdf

isc Silicon NPN Darlington Power Transistor 2SD1606 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 120V(Min) (BR)CEO High DC Current Gain h = 1000(Min) @I = 3A FE C Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for low frequency power amplifiers applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PA

 8.1. Size:84K  utc
 2sd1609.pdf

UTC 2SD1609 NPN EPITAXIAL SILICON TRANSISTOR NPN EPITAXIAL PLANAR TRANSISTOR FEATURES * Low frequency high voltage amplifier 1 TO-126 1 EMITTER 2 COLLECTOR 3 BASE ABSOLUTE MAXIMUM RATINGS (Ta=25 C, unless otherwise specified) PARAMETER SYMBOL MIN MAX UNIT Collector-Base Voltage BVCBO 160 V Collector-Emitter Voltage BVCEO 160 V Emitter-Base Voltage BVEBO 5 V Collector Curre

 8.2. Size:403K  hitachi
 2sd1603 2sd1604.pdf

 8.3. Size:32K  hitachi
 2sd1609 2sd1610.pdf

2SD1609, 2SD1610 Silicon NPN Epitaxial Application Low frequency high voltage amplifier complementary pair with 2SB1109 and 2SB1110 Outline TO-126 MOD 1. Emitter 2. Collector 3. Base 1 2 3 Absolute Maximum Ratings (Ta = 25 C) Ratings Item Symbol 2SD1609 2SD1610 Unit Collector to base voltage VCBO 160 200 V Collector to emitter voltage VCEO 160 200 V Emitter to base voltage VEB

 8.4. Size:43K  no
 2sd1608.pdf

 8.5. Size:187K  inchange semiconductor
 2sd1607.pdf

 8.6. Size:210K  inchange semiconductor
 2sd1601.pdf

isc Silicon NPN Darlington Power Transistor 2SD1601 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 60V(Min) (BR)CEO High DC Current Gain h = 1000(Min) @I = 2A FE C Complement to Type 2SB1101 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for low frequency power amplifiers applications. ABSOLUTE MAXIMUM RA

 8.7. Size:212K  inchange semiconductor
 2sd1608.pdf

isc Silicon NPN Darlington Power Transistor 2SD1608 DESCRIPTION Collector-Emitter Sustaining Voltage- V = 120V(Min) CEO(SUS) High DC Current Gain h = 1000(Min) @I = 4A FE C High Speed Switching Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for medium speed power switching applications. ABSOLUTE MAXIMUM RATINGS

 8.8. Size:210K  inchange semiconductor
 2sd1602.pdf

isc Silicon NPN Darlington Power Transistor 2SD1602 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 80V(Min) (BR)CEO High DC Current Gain h = 1000(Min) @I = 2A FE C Complement to Type 2SB1102 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for low frequency power amplifiers applications. ABSOLUTE MAXIMUM RA

 8.9. Size:211K  inchange semiconductor
 2sd1604.pdf

isc Silicon NPN Darlington Power Transistor 2SD1604 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 80V(Min) (BR)CEO High DC Current Gain h = 1000(Min) @I = 4A FE C Complement to Type 2SB1104 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for low frequency power amplifiers applications. ABSOLUTE MAXIMUM RA

 8.10. Size:193K  inchange semiconductor
 2sd1609.pdf

INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SD1609 DESCRIPTION High Collector-Emitter Breakdown Voltage- V = 160V(Min) (BR)CEO Good Linearity of h FE 100% avalanche tested Complement to Type 2SB1109 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for low frequency and high-voltage amplifier applica

 8.11. Size:210K  inchange semiconductor
 2sd1605.pdf

isc Silicon NPN Darlington Power Transistor 2SD1605 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 120V(Min) (BR)CEO High DC Current Gain h = 1000(Min) @I = 1.5A FE C Complement to Type 2SB1105 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for low frequency power amplifiers applications. ABSOLUTE MAXIMUM

 8.12. Size:211K  inchange semiconductor
 2sd1603.pdf

isc Silicon NPN Darlington Power Transistor 2SD1603 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 60V(Min) (BR)CEO High DC Current Gain h = 1000(Min) @I = 4A FE C Complement to Type 2SB1103 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for low frequency power amplifiers applications. ABSOLUTE MAXIMUM RA

 8.13. Size:189K  inchange semiconductor
 2sd1600.pdf

INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor 2SD1600 DESCRIPTION High DC Current Gain- h = 1000(Min)@ I = 4A FE C Collector-Emitter Sustaining Voltage- V = 80V(Min) CEO(SUS) Low Collector-Emitter Saturation Voltage- V = 2.0V(Max)@ I = 4A CE(sat) C Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS