2SD1606 Todos los transistores

 

2SD1606 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: 2SD1606

Material: Si

Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 40 W

Tensión colector-base (Vcb): 120 V

Tensión colector-emisor (Vce): 120 V

Tensión emisor-base (Veb): 7 V

Corriente del colector DC máxima (Ic): 6 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Ganancia de corriente contínua (hfe): 15000

Empaquetado / Estuche: TO220

Búsqueda de reemplazo de transistor bipolar 2SD1606

 

2SD1606 Datasheet (PDF)

1.1. 2sd1606.pdf Size:35K _hitachi

2SD1606
2SD1606

2SD1606 Silicon NPN Triple Diffused Application Low frequency power amplifier Outline TO-220AB 2 1 1. Base ID 2. Collector (Flange) 1 3. Emitter 2.6 k? 160 ? 2 3 (Typ) (Typ) 3 2SD1606 Absolute Maximum Ratings (Ta = 25C) Item Symbol Ratings Unit Collector to base voltage VCBO 120 V Collector to emitter voltage VCEO 120 V Emitter to base voltage VEBO 7V Collector current IC

4.1. 2sd1609.pdf Size:84K _utc

2SD1606
2SD1606

UTC 2SD1609 NPN EPITAXIAL SILICON TRANSISTOR NPN EPITAXIAL PLANAR TRANSISTOR FEATURES * Low frequency high voltage amplifier 1 TO-126 1:EMITTER 2:COLLECTOR 3:BASE ABSOLUTE MAXIMUM RATINGS (Ta=25°C, unless otherwise specified) PARAMETER SYMBOL MIN MAX UNIT Collector-Base Voltage BVCBO 160 V Collector-Emitter Voltage BVCEO 160 V Emitter-Base Voltage BVEBO 5 V Collector Current

4.2. 2sd1603 2sd1604.pdf Size:403K _hitachi

2SD1606
2SD1606

 4.3. 2sd1609 2sd1610.pdf Size:32K _hitachi

2SD1606
2SD1606

2SD1609, 2SD1610 Silicon NPN Epitaxial Application Low frequency high voltage amplifier complementary pair with 2SB1109 and 2SB1110 Outline TO-126 MOD 1. Emitter 2. Collector 3. Base 1 2 3 Absolute Maximum Ratings (Ta = 25C) Ratings Item Symbol 2SD1609 2SD1610 Unit Collector to base voltage VCBO 160 200 V Collector to emitter voltage VCEO 160 200 V Emitter to base voltage VEBO 55

4.4. 2sd1608.pdf Size:43K _no

2SD1606

 4.5. 2sd1602.pdf Size:267K _inchange_semiconductor

2SD1606
2SD1606

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Darlington Power Transistor 2SD1602 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 80V(Min) ·High DC Current Gain : hFE= 1000(Min) @IC= 2A ·Complement to Type 2SB1102 APPLICATIONS ·Designed for low frequency power amplifiers applications. ABSOLUTE MAXIMUM RATINGS(Ta=25?) SYMBOL PARAMETER VAL

4.6. 2sd1608.pdf Size:228K _inchange_semiconductor

2SD1606
2SD1606

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Darlington Power Transistor 2SD1608 DESCRIPTION ·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 120V(Min) ·High DC Current Gain : hFE= 1000(Min) @IC= 4A ·High Speed Switching APPLICATIONS ·Designed for medium speed power switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25?) SYMBOL PARAMETER VALUE UN

4.7. 2sd1605.pdf Size:235K _inchange_semiconductor

2SD1606
2SD1606

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Darlington Power Transistor 2SD1605 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 120V(Min) ·High DC Current Gain : hFE= 1000(Min) @IC= 1.5A ·Complement to Type 2SB1105 APPLICATIONS ·Designed for low frequency power amplifiers applications. ABSOLUTE MAXIMUM RATINGS(Ta=25?) SYMBOL PARAMETER

4.8. 2sd1601.pdf Size:267K _inchange_semiconductor

2SD1606
2SD1606

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Darlington Power Transistor 2SD1601 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 60V(Min) ·High DC Current Gain : hFE= 1000(Min) @IC= 2A ·Complement to Type 2SB1101 APPLICATIONS ·Designed for low frequency power amplifiers applications. ABSOLUTE MAXIMUM RATINGS(Ta=25?) SYMBOL PARAMETER VAL

4.9. 2sd1603.pdf Size:267K _inchange_semiconductor

2SD1606
2SD1606

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Darlington Power Transistor 2SD1603 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 60V(Min) ·High DC Current Gain : hFE= 1000(Min) @IC= 4A ·Complement to Type 2SB1103 APPLICATIONS ·Designed for low frequency power amplifiers applications. ABSOLUTE MAXIMUM RATINGS(Ta=25?) SYMBOL PARAMETER VAL

4.10. 2sd1604.pdf Size:267K _inchange_semiconductor

2SD1606
2SD1606

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Darlington Power Transistor 2SD1604 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 80V(Min) ·High DC Current Gain : hFE= 1000(Min) @IC= 4A ·Complement to Type 2SB1104 APPLICATIONS ·Designed for low frequency power amplifiers applications. ABSOLUTE MAXIMUM RATINGS(Ta=25?) SYMBOL PARAMETER VAL

Otros transistores... 2N3196 , 2N3197 , 2N3198 , 2N3199 , 2N32 , 2N320 , 2N3200 , 2N3201 , 2N4401 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , 2N3208 , 2N3209 , 2N3209AQF .

 

 
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