2SD1618E . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 2SD1618E
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.5 W
Tensión colector-base (Vcb): 20 V
Tensión colector-emisor (Vce): 15 V
Tensión emisor-base (Veb): 5 V
Corriente del colector DC máxima (Ic): 0.7 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 250 MHz
Capacitancia de salida (Cc): 8 pF
Ganancia de corriente contínua (hfe): 200
Paquete / Cubierta: SOT89
Búsqueda de reemplazo de 2SD1618E
2SD1618E Datasheet (PDF)
2sd1618.pdf

Ordering number:1784BPNP/NPN Epitaxial Planar Silicon Transistors2SB1118/2SD1618Low-Voltage High-Current Amplifier,Muting ApplicationsFeatures Package Dimensions Low collector-to-emitter saturation voltage.unit:mm Very small size making it easy to provide high-2038density, small-sized hybrid ICs.[2SB1118/2SD1618]E : EmitterC : CollectorB : Base( ) : 2SB111
2sd1618.pdf

Ordering number : EN1784C2SD1618Bipolar Transistorhttp://onsemi.com( )15V, 0.7A, Low VCE sat , NPN Single PCPFeatures Low collector-to-emitter saturation voltage Very small size making it easy to provide highdensity, small-sized hybrid ICsSpecificationsAbsolute Maximum Ratings at Ta=25CParameter Symbol Conditions Ratings UnitCollector-to-Base Voltage VCBO 20 V
2sd1618.pdf

SMD Type TransistorsNPN Transistors2SD1618 Features 1.70 0.1 Low collector-to-emitter saturation voltage. Very small size making it easy to provide highdensity, small-sized hybrid ICs.0.42 0.10.46 0.1 Complementary to 2SB11181.Base2.Collector3.Emitter Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO
Otros transistores... 2SD1616AG , 2SD1616AL , 2SD1616AY , 2SD1616G , 2SD1616L , 2SD1616Y , 2SD1617 , 2SD1618 , BC556 , 2SD1618S , 2SD1618U , 2SD1619 , 2SD1619R , 2SD1619S , 2SD1619T , 2SD1619U , 2SD162 .
History: BTN3904N3 | 2SA1034 | FZT2907A
History: BTN3904N3 | 2SA1034 | FZT2907A



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