2SD1618U Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 2SD1618U 📄📄
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.5 W
Tensión colector-base (Vcb): 20 V
Tensión colector-emisor (Vce): 15 V
Tensión emisor-base (Veb): 5 V
Corriente del colector DC máxima (Ic): 0.7 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (fT): 250 MHz
Capacitancia de salida (Cc): 8 pF
Ganancia de corriente contínua (hFE): 280
Encapsulados: SOT89
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2SD1618U datasheet
2sd1618.pdf
Ordering number 1784B PNP/NPN Epitaxial Planar Silicon Transistors 2SB1118/2SD1618 Low-Voltage High-Current Amplifier, Muting Applications Features Package Dimensions Low collector-to-emitter saturation voltage. unit mm Very small size making it easy to provide high- 2038 density, small-sized hybrid IC s. [2SB1118/2SD1618] E Emitter C Collector B Base ( ) 2SB111
2sd1618.pdf
Ordering number EN1784C 2SD1618 Bipolar Transistor http //onsemi.com ( ) 15V, 0.7A, Low VCE sat , NPN Single PCP Features Low collector-to-emitter saturation voltage Very small size making it easy to provide highdensity, small-sized hybrid IC s Specifications Absolute Maximum Ratings at Ta=25 C Parameter Symbol Conditions Ratings Unit Collector-to-Base Voltage VCBO 20 V
2sd1618.pdf
SMD Type Transistors NPN Transistors 2SD1618 Features 1.70 0.1 Low collector-to-emitter saturation voltage. Very small size making it easy to provide highdensity, small-sized hybrid IC s. 0.42 0.1 0.46 0.1 Complementary to 2SB1118 1.Base 2.Collector 3.Emitter Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO
Otros transistores... 2SD1616AY, 2SD1616G, 2SD1616L, 2SD1616Y, 2SD1617, 2SD1618, 2SD1618E, 2SD1618S, 2222A, 2SD1619, 2SD1619R, 2SD1619S, 2SD1619T, 2SD1619U, 2SD162, 2SD1620, 2SD1621
History: KSH31CI
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