2SD1620 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Ordering number EN1719C 2SD1620 SANYO Semiconductors DATA SHEET NPN Epitaxial Planar Silicon Transistor 2SD1620 1.5V, 3V Strobe Applications Features Less power dissipation because of low VCE(sat), permitting more flashes of light to be emitted. Large current capacity and highly resistant to breakdown. Excellent linearity of hFE in the region from low current to high cur

Ordering number EN1719D 2SD1620 Bipolar Transistor http //onsemi.com ( ) 10V, 3A, Low VCE sat , NPN Single PCP Features Less power dissipation because of low VCE(sat), permitting more flashes of light to be emitted Large current capacity and highly resistant to breakdown Excellent linearity of hFE in the region from low current to high current Ultrasmall size support

SMD Type Transistors NPN Transistors 2SD1620 SOT-89 Unit mm 1.70 0.1 Features Collector Current Capability IC=3A Collector Emitter Voltage VCEO=10V 0.42 0.1 0.46 0.1 1.Base 2.Collector 3.Emitter Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO 30 Collector - Emitter Voltage VCEX 20 V Collector - Emitter Voltag

Ordering number 2019A PNP/NPN Epitaxial Planar Silicon Transistors 2SB1124/2SD1624 High Current Switching Applications Applications Package Dimensions Voltage regulators, relay drivers, lamp drivers, unit mm electrical equipment. 2038 [2SB1124/2SD1624] Features Adoption of FBET, MBIT processes. Low collector-to-emitter saturation voltage. Fast switching speed.

Ordering number ENN2019A PNP/NPN Epitaxial Planar Silicon Transistors 2SB1124/2SD1624 High Current Switching Applications Applications Package Dimensions Voltage regulators, relay drivers, lamp drivers, unit mm electrical equipment. 2038A [2SB1124/2SD1624] Features 4.5 1.5 1.6 Adoption of FBET, MBIT processes. Low collector-to-emitter saturation voltage. Fast swi

Ordering number ENN1727D 2SB1123 / 2SD1623 PNP / NPN Epitaxial Planar Silicon Transistors 2SB1123 / 2SD1623 High-Current Switching Applications Applications Package Dimensions Voltage regulators, relay drivers, lamp drivers, unit mm electrical equipment. 2038A [2SB1123 / 2SD1623] Features 4.5 1.5 Adoption of FBET, MBIT processes. 1.6 Low collector-to-emitter sat

Ordering number 1787A PNP/NPN Epitaxial Planar Silicon Transistors 2SB1121/2SD1621 High-Current Driver Applications Applications Package Dimensions Voltage regulators, relay drivers, lamp drivers, unit mm electrical equipment. 2038 [2SB1121/2SD1621] Features Adoption of FBET, MBIT processes. Low collector-to-emitter saturation voltage. Large current capacity and wid

Ordering number EN1781A NPN Epitaxial Planar Silicon Transistor 2SD1628 High-Current Switching Applications Applications Package Dimensions Strobe DC-DC converters, relay drivers, hammer unit mm drivers, lamp drivers, motor drovers. 2038A [2SD1628] 4.5 Features 1.5 1.6 Low saturation voltage. High hFE. Large current capacity. Very small size making it easy t

Ordering number 1721A PNP/NPN Epitaxial Planar Silicon Transistors 2SB1126/2SD1626 For Various Drivers Applications Package Dimensions Relay drivers, hammer drivers, lamp drivers, motor unit mm drivers, 2038 [2SB1126/2SD1626] Features High DC current gain (4000 or greater). Large current capacity. Very small size making it easy to provide high- density, small-sized

Ordering number EN1727E 2SB1123 / 2SD1623 SANYO Semiconductors DATA SHEET PNP / NPN Epitaxial Planar Silicon Transistors 2SB1123 / 2SD1623 High-Current Switching Applications Applications Voltage regulators, relay drivers, lamp drivers, electrical equipment. Features Adoption of FBET, MBIT processes. Low collector-to-emitter saturation voltage. Large current capaci

Ordering number 2017A PNP/NPN Epitaxial Planar Silicon Transistors 2SB1125/2SD1625 Driver Applications Applications Package Dimensions Motor drivers, printer hammer drivers, relay drivers, unit mm voltage regulator control. 2038 [2SB1125/2SD1625] Features High DC current gain. Large current capacity and wide ASO. Very small size making it easy to provide high- dens

Ordering number 2040A PNP/NPN Epitaxial Planar Silicon Transistors 2SB1122/2SD1622 Low-Frequency Power Amplifier Applications Applications Package Dimensions Voltage regulators relay drivers, lamp drivers, unit mm electrical equipment. 2038 [2SB1122/2SD1622] Features Adoption of FBET process.. Very small size making it easy to provide high- density hybrid IC s. E E

Ordering number EN2016A NPN Epitaxial Planar Silicon Transistor 2SD1627 Driver Applications Applications Package Dimensions Motor drivers, hammer drivers, relay drivers, voltage unit mm regulator control. 2038A [2SD1627] 4.5 Features 1.5 1.6 High DC current gain (hFE 4000). Wide ASO. Very small size making it easy to provide high- density, small-sized hybrid

Ordering number EN2019B 2SB1124/2SD1624 Bipolar Transistor http //onsemi.com ( ) ( ) ( ) ( ) 50V, 3A, Low VCE sat , PNP NPN Single PCP Applications Voltage regulators, relay drivers, lamp drivers, electrical equipment Features Adoption of FBET, MBIT processes Low collector-to-emitter saturation voltage Fast switching speed Large current capacity and wide

Ordering number EN1781B 2SD1628 Bipolar Transistor http //onsemi.com ( ) 20V, 5A, Low VCE sat , NPN Single PCP Applications Strobe DC-DC converters, relay drivers, hammer drivers, lamp drivers, motor drovers Features Low saturation voltage High hFE Large current capacity Very small size making it easy to provide highdensity, small-sized hybrid IC s Halo

Ordering number EN1727F 2SB1123/2SD1623 Bipolar Transistor http //onsemi.com ( ) ( ) ( ) ( ) 50V, 2A, Low VCE sat , PNP NPN Single PCP Applicaitons Voltage regulators, relay drivers, lamp drivers, electrical equipment Features Adoption of FBET, MBIT processes Low collector-to-emitter saturation voltage Large current capacity and wide ASO Fast switching sp

SMD Type Transistors NPN Transistors 2SD1624 Features 1.70 0.1 Low collector-to-emitter saturation voltage. Large current capacity and wide ASO. Fast switching speed. Complementary to 2SB1124 0.42 0.1 0.46 0.1 1.Base 2.Collector 3.Emitter Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO 60 Collector - Em

SMD Type Transistors NPN Transistors 2SD1623 1.70 0.1 Features Low collector-to-emitter saturation voltage. Large current capacity and wide ASO. 0.42 0.1 0.46 0.1 Fast switching speed. Complementary to 2SB1123 1.Base 2.Collector 3.Emitter Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO 60 Collector - E

SMD Type Transistors NPN Transistors 2SD1621 1.70 0.1 Features Low collector-to-emitter saturation voltage. Large current capacity and wide ASO. Fast switching speed. 0.42 0.1 0.46 0.1 Complementary transistor with the 2SB1121 1.Base 2.Collector 3.Emitter Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO 3

SMD Type Transistors NPN Transistors 2SD1628 SOT-89 Unit mm 1.70 0.1 Features Collector Current Capability IC=5A Collector Emitter Voltage VCEO=20V 0.42 0.1 0.46 0.1 1.Base 2.Collector 3.Emitter Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO 60 Collector - Emitter Voltage VCEO 20 V Emitter - Base Voltage VEBO

SMD Type Transistors NPN Transistors 2SD1626 SOT-89 Unit mm 1.70 0.1 Features Collector Current Capability IC=1.5A Collector Emitter Voltage VCEO=50V Complementary to 2SB1126 0.42 0.1 0.46 0.1 1.Base 2.Collector 3.Emitter Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO 80 Collector - Emitter Voltage VCEO 5

SMD Type Transistors NPN Transistors 2SD1625 SOT-89 Unit mm 1.70 0.1 Features Collector Current Capability IC=0.7A Collector Emitter Voltage VCEO=50V Complementary to 2SB1125 0.42 0.1 0.46 0.1 1.Base 2.Collector 3.Emitter Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO 80 Collector - Emitter Voltage VCEO 5

SMD Type Transistors NPN Transistors 2SD1622 1.70 0.1 Features Very small size making it easy to provide highdensity, small-sized hybrid IC s. 0.42 0.1 0.46 0.1 Complementary to 2SB1122 1.Base 2.Collector 3.Emitter Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO 60 Collector - Emitter Voltage VCEO 50 V Emitt

SMD Type Transistors NPN Transistors 2SD1627 SOT-89 Unit mm 1.70 0.1 Features Collector Current Capability IC=2A Collector Emitter Voltage VCEO=25V 0.42 0.1 0.46 0.1 1.Base 2.Collector 3.Emitter Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO 30 Collector - Emitter Voltage VCEO 25 V Emitter - Base Voltage VEBO

2SD1624 Features 1.70 0.1 Low collector-to-emitter saturation voltage. Large current capacity and wide ASO. Fast switching speed. Complementary to 2SB1124 0.42 0.1 0.46 0.1 1.Base 2.Collector 3.Emitter Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO 60 Collector - Emitter Voltage VCEO 50 V Emitter - Base Volta

2SD1623 NPN-Silicon General use Transistors 1W 1.5A 25V Applications Can be used for switching and amplifying in various 4 electrical and electronic circuit. Maximum ratings 1 2 3 Parameters Symbol Rating Unit SOT-89 V VCEO 25 Collector-emitter voltage (IB=0) VCBO 40 V Collector-base voltage IE=0 Marking VEBO 6 V Emitter-base voltage IC=0 2SD1623=DFS

2SD1628 SOT-89 NPN Transistors Features Collector Current Capability IC=5A 3 Collector Emitter Voltage VCEO=20V 2 1.Base 1 2.Collector 3.Emitter Simplified outline(SOT-89) Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO 60 Collector - Emitter Voltage VCEO 20 V Emitter - Base Voltage VEBO 6 Collector C

INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SD1624 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 50V (Min) (BR)CEO Fast switching speed 100% tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for L Amp Electronic Governor applications. F ABSOLUTE MAXIMUM RATINGS(Ta=25 ) SYMBOL PARAMETER