2SD1673 Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: 2SD1673  📄📄 

Material: Si

Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 70 W

Tensión colector-base (Vcb): 500 V

Tensión colector-emisor (Vce): 400 V

Corriente del colector DC máxima (Ic): 10 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Ganancia de corriente contínua (hFE): 600

Encapsulados: TO218

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2SD1673 datasheet

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 2sd1673.pdf pdf_icon

2SD1673

INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor 2SD1673 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 400V(Min) (BR)CEO High DC Current Gain- h = 1000( Min.) @ I = 7A FE C Low Collector Saturation Voltage- V = 1.5V(Max)@ I = 5A CE(sat) C Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS For lo

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2SD1673

Transistor 2SD1679 Silicon NPN epitaxial planer type For low-frequency output amplification Unit mm +0.2 2.8 0.3 +0.25 Features 0.65 0.15 1.5 0.05 0.65 0.15 18V zener diode is built in between collector and base. Low collector to emitter saturation voltage VCE(sat). 1 High foward current transfer ratio hFE. Mini type package, allowing downsizing of the equipment and 3

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 2sd1672.pdf pdf_icon

2SD1673

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 2sd1670.pdf pdf_icon

2SD1673

isc Silicon NPN Darlington Power Transistor 2SD1670 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 100V(Min) (BR)CEO High DC Current Gain- h = 1000( Min.) @ I = 10A FE C Low Collector Saturation Voltage- V = 1.5V(Max)@ I = 10A CE(sat) C Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS For low speed high current s

MOSTRAR MÁS

Otros transistores... 2SD1669, 2SD1669Q, 2SD1669R, 2SD1669S, 2SD167, 2SD1670, 2SD1671, 2SD1672, D880, 2SD1676, 2SD1677, 2SD1678, 2SD1679, 2SD168, 2SD1680, 2SD1681, 2SD1681Q