2SD1681S . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 2SD1681S
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 10 W
Tensión colector-base (Vcb): 20 V
Tensión colector-emisor (Vce): 18 V
Tensión emisor-base (Veb): 5 V
Corriente del colector DC máxima (Ic): 1.2 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 150 MHz
Capacitancia de salida (Cc): 20 pF
Ganancia de corriente contínua (hfe): 140
Paquete / Cubierta: ISO126
Búsqueda de reemplazo de 2SD1681S
2SD1681S Datasheet (PDF)
2sd1681.pdf

Ordering number:2020APNP/NPN Epitaxial Planar Silicon Transistors2SB1141/2SD168118V/1.2A Switching ApplicationsApplications Package Dimensions Converters, relay drivers, low-voltage and highunit:mmpower AF Amplifier.2042A[2SB1141/2SD1681]Features Low saturation voltage and excellent linearity of hFE. Wide ASO.B : BaseC : CollectorE : Emitter( ) : 2SB1141
2sd1683.pdf

Ordering number:2063APNP/NPN Epitaxial Planar Silicon Transistors2SB1143/2SD168350V/4A Switching ApplicationsApplications Package Dimensions Voltage regulators, relay drivers, lamp drivers,unit:mmelectrical equipment.2042A[2SB1143/2SD1683]Features Adoption of FBET, MBIT processes. Low saturation voltage. Large current capacity and wide ASO.B : BaseC : C
2sb1143 2sd1683.pdf

Ordering number:ENN2063APNP/NPN Epitaxial Planar Silicon Transistors2SB1143/2SD168350V/4A Switching ApplicationsApplications Package Dimensions Voltage regulators, relay drivers, lamp drivers,unit:mmelectrical equipment.2042B[2SB1143/2SD1683]Features8.04.03.3 Adoption of FBET, MBIT processes. 1.0 1.0 Low saturation voltage. Large current capacity and
2sd1684.pdf

Ordering number:2041APNP/NPN Epitaxial Planar Silicon Transistors2SB1144/2SD1684100V/1.5A Switching ApplicationsFeatures Package Dimensions Adoption of FBET and MBIT processes.unit:mm High breakdown voltage.2042B Low saturation voltage.[2SB1144/2SD1684] Plastic-covered heat sink facilitating high-densitymounting.1 : Emitter2 : Collector3 : Base( ) : 2
Otros transistores... 2SD1677 , 2SD1678 , 2SD1679 , 2SD168 , 2SD1680 , 2SD1681 , 2SD1681Q , 2SD1681R , 2222A , 2SD1681T , 2SD1682 , 2SD1682R , 2SD1682S , 2SD1682T , 2SD1682U , 2SD1683 , 2SD1683R .
History: 2SC515 | KT218E9 | MMUN2232L | DMBT5551
History: 2SC515 | KT218E9 | MMUN2232L | DMBT5551



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