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2SD1682U . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: 2SD1682U
   Material: Si
   Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 10 W
   Tensión colector-base (Vcb): 60 V
   Tensión colector-emisor (Vce): 50 V
   Tensión emisor-base (Veb): 6 V
   Corriente del colector DC máxima (Ic): 2.5 A
   Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Transición de frecuencia (ft): 140 MHz
   Capacitancia de salida (Cc): 16 pF
   Ganancia de corriente contínua (hfe): 200
   Paquete / Cubierta: ISO126

 Búsqueda de reemplazo de transistor bipolar 2SD1682U

 

2SD1682U Datasheet (PDF)

 7.1. Size:149K  sanyo
2sd1682.pdf

2SD1682U
2SD1682U

Ordering number:2060APNP/NPN Epitaxial Planar Silicon Transistors2SB1142/2SD168250V/2.5A High-Speed Switching ApplicationsApplications Package Dimensions Power supplies, relay drivers, lamp drivers. unit:mm2042AFeatures [2SB1142/2SD1682] Adoption of FBET, MBIT processes. Low saturation voltage. Large current capacity and wide ASO.B : BaseC : Collector( ) :

 8.1. Size:146K  sanyo
2sd1683.pdf

2SD1682U
2SD1682U

Ordering number:2063APNP/NPN Epitaxial Planar Silicon Transistors2SB1143/2SD168350V/4A Switching ApplicationsApplications Package Dimensions Voltage regulators, relay drivers, lamp drivers,unit:mmelectrical equipment.2042A[2SB1143/2SD1683]Features Adoption of FBET, MBIT processes. Low saturation voltage. Large current capacity and wide ASO.B : BaseC : C

 8.2. Size:60K  sanyo
2sb1143 2sd1683.pdf

2SD1682U
2SD1682U

Ordering number:ENN2063APNP/NPN Epitaxial Planar Silicon Transistors2SB1143/2SD168350V/4A Switching ApplicationsApplications Package Dimensions Voltage regulators, relay drivers, lamp drivers,unit:mmelectrical equipment.2042B[2SB1143/2SD1683]Features8.04.03.3 Adoption of FBET, MBIT processes. 1.0 1.0 Low saturation voltage. Large current capacity and

 8.3. Size:146K  sanyo
2sd1684.pdf

2SD1682U
2SD1682U

Ordering number:2041APNP/NPN Epitaxial Planar Silicon Transistors2SB1144/2SD1684100V/1.5A Switching ApplicationsFeatures Package Dimensions Adoption of FBET and MBIT processes.unit:mm High breakdown voltage.2042B Low saturation voltage.[2SB1144/2SD1684] Plastic-covered heat sink facilitating high-densitymounting.1 : Emitter2 : Collector3 : Base( ) : 2

 8.4. Size:133K  sanyo
2sd1681.pdf

2SD1682U
2SD1682U

Ordering number:2020APNP/NPN Epitaxial Planar Silicon Transistors2SB1141/2SD168118V/1.2A Switching ApplicationsApplications Package Dimensions Converters, relay drivers, low-voltage and highunit:mmpower AF Amplifier.2042A[2SB1141/2SD1681]Features Low saturation voltage and excellent linearity of hFE. Wide ASO.B : BaseC : CollectorE : Emitter( ) : 2SB1141

 8.5. Size:113K  sanyo
2sd1685.pdf

2SD1682U
2SD1682U

Ordering number:EN2042ANPN Epitaxial Planar Silicon Transistor2SD168520V/5A Switching ApplicationsApplications Package Dimensions Strobe, voltage regulators, relay drivers, lampunit:mmdrivers.2042B[2SD1685]8.0Features4.03.31.0 1.0 Low saturation voltage. Large current capacity.3.0 Fast switching time. No insulator required when mounting becau

 8.6. Size:213K  inchange semiconductor
2sd1683.pdf

2SD1682U
2SD1682U

isc Silicon NPN Power Transistor 2SD1683DESCRIPTIONHigh Collector Current-I = 4ACLow Saturation Voltage -: V = 0.5V(Max)@ I = 2ACE(sat) CComplement to Type 2SB1143Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in voltage regulations, relay drivers, lampdrivers and electrical equipment.ABSOLUTE MAX

 8.7. Size:212K  inchange semiconductor
2sd1684.pdf

2SD1682U
2SD1682U

isc Silicon NPN Power Transistor 2SD1684DESCRIPTION Collector Saturation VoltageLow: V = -0.5V(Max)@I = -0.5ACE(sat) CWide Area of Safe OperationComplement to Type 2SB1144Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for 100V/1.5A Switching ApplicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAME

 8.8. Size:208K  inchange semiconductor
2sd1680.pdf

2SD1682U
2SD1682U

isc Silicon NPN Power Transistor 2SD1680DESCRIPTIONCollector-Base Breakdown Voltage-: V = 330V(Min)(BR)CBOHigh Power DissipationHigh Speed SwitchingMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for horizontal deflection output applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV

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