2SD1682U . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 2SD1682U
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 10 W
Tensión colector-base (Vcb): 60 V
Tensión colector-emisor (Vce): 50 V
Tensión emisor-base (Veb): 6 V
Corriente del colector DC máxima (Ic): 2.5 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 140 MHz
Capacitancia de salida (Cc): 16 pF
Ganancia de corriente contínua (hfe): 200
Paquete / Cubierta: ISO126
- Selección de transistores por parámetros
2SD1682U Datasheet (PDF)
2sd1682.pdf

Ordering number:2060APNP/NPN Epitaxial Planar Silicon Transistors2SB1142/2SD168250V/2.5A High-Speed Switching ApplicationsApplications Package Dimensions Power supplies, relay drivers, lamp drivers. unit:mm2042AFeatures [2SB1142/2SD1682] Adoption of FBET, MBIT processes. Low saturation voltage. Large current capacity and wide ASO.B : BaseC : Collector( ) :
2sd1683.pdf

Ordering number:2063APNP/NPN Epitaxial Planar Silicon Transistors2SB1143/2SD168350V/4A Switching ApplicationsApplications Package Dimensions Voltage regulators, relay drivers, lamp drivers,unit:mmelectrical equipment.2042A[2SB1143/2SD1683]Features Adoption of FBET, MBIT processes. Low saturation voltage. Large current capacity and wide ASO.B : BaseC : C
2sb1143 2sd1683.pdf

Ordering number:ENN2063APNP/NPN Epitaxial Planar Silicon Transistors2SB1143/2SD168350V/4A Switching ApplicationsApplications Package Dimensions Voltage regulators, relay drivers, lamp drivers,unit:mmelectrical equipment.2042B[2SB1143/2SD1683]Features8.04.03.3 Adoption of FBET, MBIT processes. 1.0 1.0 Low saturation voltage. Large current capacity and
2sd1684.pdf

Ordering number:2041APNP/NPN Epitaxial Planar Silicon Transistors2SB1144/2SD1684100V/1.5A Switching ApplicationsFeatures Package Dimensions Adoption of FBET and MBIT processes.unit:mm High breakdown voltage.2042B Low saturation voltage.[2SB1144/2SD1684] Plastic-covered heat sink facilitating high-densitymounting.1 : Emitter2 : Collector3 : Base( ) : 2
Otros transistores... 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SA1804R , 2SA1805 , 2SA1805O , 2SA1805R , TIP31 , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C , 2SA1811 , 2SA1815 , 2SA1815-3 , 2SA1815-4 .
History: MPS6532 | 2SC5448 | JA100R | KTC3226 | NPS3866 | CJF2955 | GT810A
History: MPS6532 | 2SC5448 | JA100R | KTC3226 | NPS3866 | CJF2955 | GT810A



Liste
Recientemente añadidas las descripciónes de los transistores:
BJT: GA1A4M | SBT42 | 2SA200-Y | 2SA200-O | 2SD882-Q | 2SD882-P | 2SD882-E | 2SC945-L | 2SC945-H | 2SC4226-R23 | 2SC3357-F | 2SC3357-E | 2SC3356-R26 | 2SC3356-R24 | 2SC3356-R23 | 2SB772-Q | 2SB772-P | 2SB772-E | 2SA1015-L | 2SA1015-H | HSS8550
Popular searches
a1023 | d313 transistor | 2sa1302 | 2sd315 | a1013 | 2sb554 | 2sd2560 | 2sc2078 transistor