2SD1691 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

DATA SHEETSILICON POWER TRANSISTOR2SD1691NPN SILICON EPITAXIAL TRANSISTOR FOR LOW-FREQUENCEY POWER AMPLIFIERS AND MID-SPEED SWITCHING FEATURES PACKAGE DRAWING (UNIT: mm) Large current capacity and low VCE(sat): IC(DC) = 5.0 A, IC(pulse) = 8.0 A VCE(sat) = 0.1 V TYP. (@IC = 2.0 A, IB = 0.2 A) Large power dissipation TO-126 type power transistor PT = 1.3 W (@Ta = 25

UNISONIC TECHNOLOGIES CO., LTD 2SD1691 NPN SILICON TRANSISTOR LOW COLLECTOR SATURATION VOLTAGE 11LARGE CURRENT TO-220F1TO-220 FEATURES *High Power Dissipation 11*Complementary to 2SB1151 TO-251 TO-25211TO-126CTO-126 ORDERING INFORMATION Ordering Number Pin Assignment Package Packing Lead Free Plating Halogen Free 1 2 3 2SD1691L-x-TA3-T 2SD1691

isc Silicon NPN Power Transistor 2SD1691DESCRIPTIONHigh Collector Current -I = 5ACLow Collector Saturation Voltage: V = 0.3V(Max.)@ I = 2ACE(sat) CComplement to Type 2SB1151Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in DC-DC converter, or driver of solenoidor motor.ABSOLUTE MAXIMUM RATINGS(T =

ST 2SD1691T NPN Silicon Epitaxial Power Transistor For Low-Frequencey Power Amplifiers and Mid-Speed Switching The transistor is subdivided into three groups, M, L and K, according to its DC-DC current gain. ECBTO-126 Plastic PackageOAbsolute Maximum Ratings (Ta = 25 C) Symbol Value UnitParameter VCBO 60 VCollector to Base Voltage VCEO 60 VCollector to Emitter

DATA SHEETSILICON POWER TRANSISTOR2SD1695NPN SILICON EPITAXIAL TRANSISTOR (DARLINGTON CONNECTION)FOR LOW-FREQUENCY POWER AMPLIFIERS AND LOW-SPEED SWITCHINGThe 2SD1695 is a Darlington connection transistor and PACKAGE DRAWING (UNIT: mm)incorporates a dumper diode between the collector and emitter anda constant voltage diode and protection elements between thecollector and base. T

DATA SHEETSILICON POWER TRANSISTOR2SD1692NPN SILICON EPITAXIAL TRANSISTOR (DARLINGTON CONNECTION) FEATURES PACKAGE DRAWING (UNIT: mm) High DC current gain due to Darlington connection Large current capacity and low VCE(sat) Large power dissipation TO-126 type power transistor Complementary transistor: 2SB1149 ABSOLUTE MAXIMUM RATINGS (Ta = 25C) Parameter

SMD Type TransistorsNPN Transistors2SD1699SOT-89Unit:mm1.70 0.1 Features Collector Current Capability IC=0.8A Collector Emitter Voltage VCEO=80V0.42 0.10.46 0.11.Base2.Collector3.Emitter Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 100 Collector - Emitter Voltage VCEO 80 V Emitter - Base Voltage V

isc Silicon NPN Darlington Power Transistor 2SD1692DESCRIPTIONCollectorEmitter Sustaining Voltage: V = 100V(min.)CEO(SUS)DC Current Gain: h = 2000(Min.) @ I = 1.5 AFE CComplement to Type 2SB1149Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for general-purpose amplifier applications.ABSOLUTE MAXI