2SD1709
. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 2SD1709
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 100
W
Tensión colector-base (Vcb): 1500
V
Tensión colector-emisor (Vce): 800
V
Corriente del colector DC máxima (Ic): 5
A
Temperatura operativa máxima (Tj): 150
°C
CARACTERÍSTICAS ELÉCTRICAS
Ganancia de corriente contínua (hfe): 8
Paquete / Cubierta:
TO218
Búsqueda de reemplazo de transistor bipolar 2SD1709
2SD1709
Datasheet (PDF)
..1. Size:215K inchange semiconductor
2sd1709.pdf 
isc Silicon NPN Power Transistor 2SD1709DESCRIPTIONHigh Breakdown Voltage-: V = 1500V (Min)CBOHigh Switching SpeedBuilt-in Damper DiodeMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSColor TV horizontal deflection outputColor display horizontal deflection outputABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETE
8.4. Size:93K panasonic
2sd1707.pdf
Power Transistors2SD1707Silicon NPN epitaxial planar typeUnit: mmFor power switching15.00.3 5.00.211.00.2 (3.2)Complementary to 2SB1156 Features 3.20.1 Low collector-emitter saturation voltage VCE(sat) Satisfactory linearity of forward current transfer ratio hFE Large collector current IC2.00.2 2.00.1 Full-pack package which can be install
8.5. Size:92K panasonic
2sd1705.pdf
Power Transistors2SD1705Silicon NPN epitaxial planar typeUnit: mmFor power switching15.00.3 5.00.211.00.2 (3.2)Complementary to 2SB1154 Features 3.20.1 Low collector-emitter saturation voltage VCE(sat) Satisfactory linearity of forward current transfer ratio hFE Large collector current IC2.00.2 2.00.1 Full-pack package which can be install
8.7. Size:1053K kexin
2sd1702.pdf
SMD Type TransistorsNPN Transistors2SD1702SOT-89Unit:mm1.70 0.1 Features Collector Current Capability IC=0.8A Collector Emitter Voltage VCEO=50V0.42 0.10.46 0.11.Base2.Collector3.Emitter Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 50 Collector - Emitter Voltage VCEO 50 V Emitter - Base Voltage VE
8.8. Size:218K inchange semiconductor
2sd1707.pdf
isc Silicon NPN Power Transistor 2SD1707DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 80V(Min)(BR)CEOGood Linearity of hFELow Collector Saturation Voltage-: V = 0.5V(Max.)@ I = 8ACE(sat) CComplement to Type 2SB1156Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for power switching applications
8.9. Size:215K inchange semiconductor
2sd1705.pdf
isc Silicon NPN Power Transistor 2SD1705DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 80V(Min)(BR)CEOGood Linearity of hFELow Collector Saturation Voltage-: V = 0.5V(Max.)@ I = 6ACE(sat) CComplement to Type 2SB1154Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for power switching applications
8.10. Size:216K inchange semiconductor
2sd1706.pdf
isc Silicon NPN Power Transistor 2SD1706DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 80V(Min)(BR)CEOGood Linearity of hFELow Collector Saturation Voltage-: V = 0.5V(Max.)@ I = 7ACE(sat) CComplement to Type 2SB1155Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for power switching applications
Otros transistores... 2SA1803O
, 2SA1803R
, 2SA1804
, 2SA1804O
, 2SA1804R
, 2SA1805
, 2SA1805O
, 2SA1805R
, TIP42
, 2SA181
, 2SA1810
, 2SA1810B
, 2SA1810C
, 2SA1811
, 2SA1815
, 2SA1815-3
, 2SA1815-4
.
