2SD1724Q
. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 2SD1724Q
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 20
W
Tensión colector-base (Vcb): 120
V
Tensión colector-emisor (Vce): 100
V
Tensión emisor-base (Veb): 6
V
Corriente del colector DC máxima (Ic): 3
A
Temperatura operativa máxima (Tj): 150
°C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 180
MHz
Capacitancia de salida (Cc): 25
pF
Ganancia de corriente contínua (hfe): 70
Paquete / Cubierta:
TO247
Búsqueda de reemplazo de transistor bipolar 2SD1724Q
2SD1724Q
Datasheet (PDF)
7.1. Size:144K sanyo
2sd1724.pdf
Ordering number:2047APNP/NPN Epitaxial Planar Silicon Transistors2SB1167/2SD1724100V/3A Switching ApplicationsFeatures Package Dimensions Relay drivers, high-speed inverters, converters. unit:mm2043AFeatures [2SB1167/2SD1724] Low collector-to-emitter saturation voltage. High fT. Excellent linearity of hFE. Fast switching time.B : BaseC : CollectorE : E
8.1. Size:53K sanyo
2sd1725.pdf
Ordering number:ENN2048BPNP/NPN Epitaxial Planar Silicon Transistors2SB1168/2SD1725Large Current Switching ApplicationsFeatures Package Dimensions Relay drivers, high-speed inverters, converters. unit:mm2043BFeatures [2SB1168/2SD1725]8.02.0 Low collector-to-emitter saturation voltage. 2.74.0 High fT. Excellent linearity of hFE. Short switching time.1
8.2. Size:144K sanyo
2sd1722.pdf
Ordering number:2046APNP/NPN Epitaxial Planar Silicon Transistors2SB1165/2SD172250V/5A Switching ApplicationsApplications Package Dimensions Relay drivers, high-speed inverters, converters. unit:mm2043AFeatures [2SB1165/2SD1722] Low collector-to-emitter saturation voltage. High fT. Excellent linearity of hFE. Fast switching time.B : BaseC : CollectorE
8.3. Size:146K sanyo
2sd1723.pdf
Ordering number:2021APNP/NPN Epitaxial Planar Silicon Transistors2SB1166/2SD172350V/8A Switching ApplicationsApplications Package Dimensions Relay drivers, high-speed inverters, converters. unit:mm2043AFeatures [2SB1166/2SD1723] Low collector-to-emitter saturation voltage. High fT. Excellent linearity of hFE. Fast switchint time.B : BaseC : CollectorE
8.4. Size:104K panasonic
2sd1729.pdf
This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer
8.6. Size:213K inchange semiconductor
2sd1720.pdf
isc Silicon NPN Power Transistor 2SD1720DESCRIPTIONHigh Collector Current:: I = 5ACLow Collector Saturation Voltage: V = 1.0V(Max.)@I = 3ACE(sat) CWide Area of Safe OperationComplement to Type 2SB1291Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for low frequency power amplifier applications.ABSOLUTE M
8.7. Size:215K inchange semiconductor
2sd1728.pdf
isc Silicon NPN Power Transistor 2SD1728DESCRIPTIONHigh VoltageHigh Switching SpeedBuilt-in damper diodeWide Area of Safe OperationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for horizontal deflection output applications.ABSOLUTE MAXIMUM RATINGS (T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base
8.8. Size:215K inchange semiconductor
2sd1727.pdf
isc Silicon NPN Power Transistor 2SD1727DESCRIPTIONHigh VoltageHigh Switching SpeedBuilt-in damper diodeWide Area of Safe OperationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for horizontal deflection output applications.ABSOLUTE MAXIMUM RATINGS (T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base
8.9. Size:215K inchange semiconductor
2sd1729.pdf
isc Silicon NPN Power Transistor 2SD1729DESCRIPTIONHigh VoltageHigh Switching SpeedBuilt-in damper diodeWide Area of Safe OperationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for horizontal deflection output applications.ABSOLUTE MAXIMUM RATINGS (T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base
Otros transistores... 2SA1771
, 2SA178
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, 2SA1791
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, 2SA1800Y
.