2SD1728 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 2SD1728
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 60 W
Tensión colector-base (Vcb): 1500 V
Tensión colector-emisor (Vce): 700 V
Corriente del colector DC máxima (Ic): 2.5 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Ganancia de corriente contínua (hfe): 8
Paquete / Cubierta: TO218
Búsqueda de reemplazo de transistor bipolar 2SD1728
2SD1728 Datasheet (PDF)
2sd1728.pdf
isc Silicon NPN Power Transistor 2SD1728DESCRIPTIONHigh VoltageHigh Switching SpeedBuilt-in damper diodeWide Area of Safe OperationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for horizontal deflection output applications.ABSOLUTE MAXIMUM RATINGS (T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base
2sd1724.pdf
Ordering number:2047APNP/NPN Epitaxial Planar Silicon Transistors2SB1167/2SD1724100V/3A Switching ApplicationsFeatures Package Dimensions Relay drivers, high-speed inverters, converters. unit:mm2043AFeatures [2SB1167/2SD1724] Low collector-to-emitter saturation voltage. High fT. Excellent linearity of hFE. Fast switching time.B : BaseC : CollectorE : E
2sd1725.pdf
Ordering number:ENN2048BPNP/NPN Epitaxial Planar Silicon Transistors2SB1168/2SD1725Large Current Switching ApplicationsFeatures Package Dimensions Relay drivers, high-speed inverters, converters. unit:mm2043BFeatures [2SB1168/2SD1725]8.02.0 Low collector-to-emitter saturation voltage. 2.74.0 High fT. Excellent linearity of hFE. Short switching time.1
2sd1722.pdf
Ordering number:2046APNP/NPN Epitaxial Planar Silicon Transistors2SB1165/2SD172250V/5A Switching ApplicationsApplications Package Dimensions Relay drivers, high-speed inverters, converters. unit:mm2043AFeatures [2SB1165/2SD1722] Low collector-to-emitter saturation voltage. High fT. Excellent linearity of hFE. Fast switching time.B : BaseC : CollectorE
2sd1723.pdf
Ordering number:2021APNP/NPN Epitaxial Planar Silicon Transistors2SB1166/2SD172350V/8A Switching ApplicationsApplications Package Dimensions Relay drivers, high-speed inverters, converters. unit:mm2043AFeatures [2SB1166/2SD1723] Low collector-to-emitter saturation voltage. High fT. Excellent linearity of hFE. Fast switchint time.B : BaseC : CollectorE
2sd1729.pdf
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2sd1720.pdf
isc Silicon NPN Power Transistor 2SD1720DESCRIPTIONHigh Collector Current:: I = 5ACLow Collector Saturation Voltage: V = 1.0V(Max.)@I = 3ACE(sat) CWide Area of Safe OperationComplement to Type 2SB1291Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for low frequency power amplifier applications.ABSOLUTE M
2sd1727.pdf
isc Silicon NPN Power Transistor 2SD1727DESCRIPTIONHigh VoltageHigh Switching SpeedBuilt-in damper diodeWide Area of Safe OperationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for horizontal deflection output applications.ABSOLUTE MAXIMUM RATINGS (T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base
2sd1729.pdf
isc Silicon NPN Power Transistor 2SD1729DESCRIPTIONHigh VoltageHigh Switching SpeedBuilt-in damper diodeWide Area of Safe OperationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for horizontal deflection output applications.ABSOLUTE MAXIMUM RATINGS (T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base
Otros transistores... 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SA1804R , 2SA1805 , 2SA1805O , 2SA1805R , TIP42 , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C , 2SA1811 , 2SA1815 , 2SA1815-3 , 2SA1815-4 .
Liste
Recientemente añadidas las descripciónes de los transistores:
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