2SD1732 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

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isc Silicon NPN Power Transistor 2SD1732DESCRIPTIONHigh VoltageHigh Switching SpeedBuilt-in damper diodeWide Area of Safe OperationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for horizontal deflection output applications.ABSOLUTE MAXIMUM RATINGS (T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base

2SD1898 / 2SD1733 / 2SD1768S / 2SD1863TransistorsPower Transistor (80V, 1A)2SD1898 / 2SD1733 / 2SD1768S / 2SD1863 External dimensions (Units : mm) Features1) High VCEO, VCEO=80V2SD18982) High IC, IC=1A (DC)4.5+0.2-0.11.5+0.21.60.1 -0.13) Good hFE linearity4) Low VCE (sat)5) Complements the 2SB1260 / (1) (2) (3)0.4+0.1-0.05 2SB1241 / 2SB1181 0.40.1 0.50.

Power Transistor (80V, 1A) 2SD1898 / 2SD1733 / 2SD1768S / 2SD1863 Features Dimensions (Unit : mm) 1) High VCEO, VCEO=80V 2SD18982) High IC, IC=1A (DC) 4.5+0.2-0.11.50.13) Good hFE linearity 1.60.14) Low VCE (sat) 5) Complements the 2SB1260 / (1) (2) (3) 2SB1241 / 2SB1181 0.4+0.1-0.050.40.1 0.50.1 0.40.11.50.1 1.50.13.00.2(1) BaseRO

2SD1898 / 2SD1733Datasheet NPN 1.0A 80V Middle Power TransistorlOutlineCollector MPT3 CPT3Parameter ValueVCEO80VBase Collector IC1.0AEmitter Base Emitter 2SD1898 2SD1733 lFeatures(SC-62) (SC-63) 1) Suitable for Middle Power Driver 2) Complementary PNP Types : 2SB1260 / 2SB11813) Low VCE(sat)VCE(sat)= 0.4V Max. (IC/IB=500mA/20mA)4

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This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer

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SMD Type TransistorsNPN Transistors2SD1733TO-252Unit: mm+0.156.50-0.15+0.12.30 -0.1+0.2 Features 5.30-0.2 +0.80.50 -0.7 High VCEO, VCEO=80V High IC, IC=1A (DC) Low VCE (sat)0.127+0.10.80-0.1max Complementary to 2SB1181+ 0.11 Base2.3 0.60- 0.1+0.154.60 -0.152 Collector3 Emitter Absolute Maximum Ratings Ta = 25Parame

isc Silicon NPN Power Transistor 2SD1735DESCRIPTIONHigh VoltageHigh Switching SpeedWide Area of Safe OperationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for horizontal deflection output applications.ABSOLUTE MAXIMUM RATINGS (T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltage 1300 VCBOV Co

isc Silicon NPN Power Transistor 2SD1731DESCRIPTIONHigh VoltageHigh Switching SpeedBuilt-in damper diodeWide Area of Safe OperationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for horizontal deflection output applications.ABSOLUTE MAXIMUM RATINGS (T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base

isc Silicon NPN Power Transistor 2SD1734DESCRIPTIONHigh VoltageHigh Switching SpeedWide Area of Safe OperationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for horizontal deflection output applications.ABSOLUTE MAXIMUM RATINGS (T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltage 1300 VCBOV Co

isc Silicon NPN Power Transistor 2SD1736DESCRIPTIONHigh VoltageHigh Switching SpeedWide Area of Safe OperationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for horizontal deflection output applications.ABSOLUTE MAXIMUM RATINGS (T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltage 1300 VCBOV Co

isc Silicon NPN Power Transistor 2SD1737DESCRIPTIONHigh VoltageHigh Switching SpeedWide Area of Safe OperationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for horizontal deflection output applications.ABSOLUTE MAXIMUM RATINGS (T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltage 1300 VCBOV Co

isc Silicon NPN Power Transistor 2SD1730DESCRIPTIONHigh VoltageHigh Switching SpeedBuilt-in damper diodeWide Area of Safe OperationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for horizontal deflection output applications.ABSOLUTE MAXIMUM RATINGS (T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base

isc Silicon NPN Power Transistor 2SD1738DESCRIPTIONHigh VoltageHigh Switching SpeedWide Area of Safe OperationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for horizontal deflection output applications.ABSOLUTE MAXIMUM RATINGS (T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltage 1300 VCBOV Co

isc Silicon NPN Power Transistor 2SD1739DESCRIPTIONHigh VoltageHigh Switching SpeedWide Area of Safe OperationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for horizontal deflection output applications.ABSOLUTE MAXIMUM RATINGS (T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltage 1300 VCBOV Co