2SD1735
. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 2SD1735
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 60
W
Tensión colector-base (Vcb): 1500
V
Tensión colector-emisor (Vce): 700
V
Corriente del colector DC máxima (Ic): 1.5
A
Temperatura operativa máxima (Tj): 150
°C
CARACTERÍSTICAS ELÉCTRICAS
Ganancia de corriente contínua (hfe): 8
Paquete / Cubierta:
TO126
Búsqueda de reemplazo de transistor bipolar 2SD1735
2SD1735
Datasheet (PDF)
..1. Size:209K inchange semiconductor
2sd1735.pdf 
isc Silicon NPN Power Transistor 2SD1735DESCRIPTIONHigh VoltageHigh Switching SpeedWide Area of Safe OperationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for horizontal deflection output applications.ABSOLUTE MAXIMUM RATINGS (T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltage 1300 VCBOV Co
8.1. Size:80K rohm
2sd1733.pdf
2SD1898 / 2SD1733 / 2SD1768S / 2SD1863TransistorsPower Transistor (80V, 1A)2SD1898 / 2SD1733 / 2SD1768S / 2SD1863 External dimensions (Units : mm) Features1) High VCEO, VCEO=80V2SD18982) High IC, IC=1A (DC)4.5+0.2-0.11.5+0.21.60.1 -0.13) Good hFE linearity4) Low VCE (sat)5) Complements the 2SB1260 / (1) (2) (3)0.4+0.1-0.05 2SB1241 / 2SB1181 0.40.1 0.50.
8.2. Size:114K rohm
2sd1898 2sd1733 2sd1768s 2sd1863.pdf
Power Transistor (80V, 1A) 2SD1898 / 2SD1733 / 2SD1768S / 2SD1863 Features Dimensions (Unit : mm) 1) High VCEO, VCEO=80V 2SD18982) High IC, IC=1A (DC) 4.5+0.2-0.11.50.13) Good hFE linearity 1.60.14) Low VCE (sat) 5) Complements the 2SB1260 / (1) (2) (3) 2SB1241 / 2SB1181 0.4+0.1-0.050.40.1 0.50.1 0.40.11.50.1 1.50.13.00.2(1) BaseRO
8.3. Size:458K rohm
2sd1898 2sd1733.pdf
2SD1898 / 2SD1733Datasheet NPN 1.0A 80V Middle Power TransistorlOutlineCollector MPT3 CPT3Parameter ValueVCEO80VBase Collector IC1.0AEmitter Base Emitter 2SD1898 2SD1733 lFeatures(SC-62) (SC-63) 1) Suitable for Middle Power Driver 2) Complementary PNP Types : 2SB1260 / 2SB11813) Low VCE(sat)VCE(sat)= 0.4V Max. (IC/IB=500mA/20mA)4
8.4. Size:105K panasonic
2sd1731.pdf
This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer
8.5. Size:105K panasonic
2sd1732.pdf
This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer
8.6. Size:105K panasonic
2sd1730.pdf
This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer
8.7. Size:102K panasonic
2sd1739.pdf
This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer
8.8. Size:974K kexin
2sd1733.pdf
SMD Type TransistorsNPN Transistors2SD1733TO-252Unit: mm+0.156.50-0.15+0.12.30 -0.1+0.2 Features 5.30-0.2 +0.80.50 -0.7 High VCEO, VCEO=80V High IC, IC=1A (DC) Low VCE (sat)0.127+0.10.80-0.1max Complementary to 2SB1181+ 0.11 Base2.3 0.60- 0.1+0.154.60 -0.152 Collector3 Emitter Absolute Maximum Ratings Ta = 25Parame
8.9. Size:215K inchange semiconductor
2sd1731.pdf
isc Silicon NPN Power Transistor 2SD1731DESCRIPTIONHigh VoltageHigh Switching SpeedBuilt-in damper diodeWide Area of Safe OperationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for horizontal deflection output applications.ABSOLUTE MAXIMUM RATINGS (T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base
8.10. Size:212K inchange semiconductor
2sd1734.pdf
isc Silicon NPN Power Transistor 2SD1734DESCRIPTIONHigh VoltageHigh Switching SpeedWide Area of Safe OperationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for horizontal deflection output applications.ABSOLUTE MAXIMUM RATINGS (T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltage 1300 VCBOV Co
8.11. Size:218K inchange semiconductor
2sd1736.pdf
isc Silicon NPN Power Transistor 2SD1736DESCRIPTIONHigh VoltageHigh Switching SpeedWide Area of Safe OperationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for horizontal deflection output applications.ABSOLUTE MAXIMUM RATINGS (T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltage 1300 VCBOV Co
8.12. Size:215K inchange semiconductor
2sd1732.pdf
isc Silicon NPN Power Transistor 2SD1732DESCRIPTIONHigh VoltageHigh Switching SpeedBuilt-in damper diodeWide Area of Safe OperationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for horizontal deflection output applications.ABSOLUTE MAXIMUM RATINGS (T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base
8.13. Size:209K inchange semiconductor
2sd1737.pdf
isc Silicon NPN Power Transistor 2SD1737DESCRIPTIONHigh VoltageHigh Switching SpeedWide Area of Safe OperationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for horizontal deflection output applications.ABSOLUTE MAXIMUM RATINGS (T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltage 1300 VCBOV Co
8.14. Size:215K inchange semiconductor
2sd1730.pdf
isc Silicon NPN Power Transistor 2SD1730DESCRIPTIONHigh VoltageHigh Switching SpeedBuilt-in damper diodeWide Area of Safe OperationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for horizontal deflection output applications.ABSOLUTE MAXIMUM RATINGS (T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base
8.15. Size:210K inchange semiconductor
2sd1738.pdf
isc Silicon NPN Power Transistor 2SD1738DESCRIPTIONHigh VoltageHigh Switching SpeedWide Area of Safe OperationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for horizontal deflection output applications.ABSOLUTE MAXIMUM RATINGS (T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltage 1300 VCBOV Co
8.16. Size:209K inchange semiconductor
2sd1739.pdf
isc Silicon NPN Power Transistor 2SD1739DESCRIPTIONHigh VoltageHigh Switching SpeedWide Area of Safe OperationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for horizontal deflection output applications.ABSOLUTE MAXIMUM RATINGS (T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltage 1300 VCBOV Co
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