2SD1756 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

isc Silicon NPN Darlington Power Transistor 2SD1756 DESCRIPTION Collector-Emitter Sustaining Voltage- V = 170V(Min) CEO(SUS) High DC Current Gain h = 1500(Min) @I = 5A FE C Low Collector Saturation Voltage Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high voltage high current amplifier applications. ABSOL

Medium power transistor (32V, 2A) 2SD1766 / 2SD1758 / 2SD1862 Features Dimensions (Unit mm) 1) Low VCE(sat). 2SD1766 2SD1758 VCE(sat) = 0.5V (Typ.) 4.5+0.2 -0.1 (IC/IB = 2A / 0.2A) 2.3+0.2 6.5 0.2 -0.1 1.5+0.2 C0.5 1.6 0.1 -0.1 5.1+0.2 -0.1 0.5 0.1 2) Complements the 2SB1188 / 2SB1182 / 2SB1240 (1) (2) (3) 0.65 0.1 0.75 Structure 0.4+0.1 -0.05 0.9 0.4

2SD1757K Transistors Power Transistor (15V, 0.5A) 2SD1757K External dimensions (Units mm) Features 1) Low VCE(sat). (Typ.8mV at IC/IB = 10/1mA) 2) Optimal for muting. 1.6 Absolute maximum ratings (Ta = 25 C) 2.8 Parameter Symbol Limits Unit Collector-base voltage VCBO 30 V 0.3to0.6 Collector-emitter voltage VCEO 15 V Each lead has same dimensions Emitter-base voltage VEBO

Medium power transistor (32V, 2A) 2SD1758 / 2SD1862 Features Dimensions (Units mm) 1) Low VCE(sat). 2SD1758 2SD1862 VCE(sat) = 0.5V (Typ.) 2.5 0.2 2.3+0.2 6.8 0.2 6.5 0.2 -0.1 (IC/IB = 2A / 0.2A) C0.5 5.1+0.2 -0.1 0.5 0.1 2) Complements the 2SB1182 / 2SB1240 0.65 0.1 0.75 0.65Max. Structure 0.9 0.55 0.1 Epitaxial planar type NPN silicon transistor

2SD1757K Datasheet Power Transistor (15V, 500mA) lOutline l Parameter Value SMT3 VCEO 15V IC 500mA SOT-346 SC-59 lFeatures l 1)Low VCE(sat). (Typ.8mV at IC/IB=10/1mA) lInner circuit l 2)Optimal for muting. lApplication l MUTING

2SD1759 / 2SD1861 Transistors Power transistor (40V, 2A) 2SD1759 / 2SD1861 External dimensions (Units mm) Features 1) Darlington connection for high DC current gain. 2SD1759 2) Built-in 4k resistor between base and emitter. 5.5 1.5 3) Complements the 2SB1183 / 2SB1239. 0.9 C0.5 Equivalent circuit 0.8Min. 1.5 C 2.5 9.5 B ROHM CPT3 (1) Base (2) Collector EIAJ SC-

Power Transistors 2SD1755 Silicon NPN epitaxial planar type Unit mm 7.0 0.3 3.5 0.2 3.0 0.2 For power amplification with high forward current transfer ratio 1.1 0.1 0.85 0.1 Features 0.75 0.1 0.4 0.1 High forward current transfer ratio hFE which has satisfactory linearity 2.3 0.2 High emitter to base voltage VEBO 4.6 0.4 I type package enabling direct soldering

Power Transistors 2SD1754, 2SD1754A Silicon NPN triple diffusion planar type Unit mm 7.0 0.3 3.5 0.2 3.0 0.2 For power amplification with high forward current transfer ratio 1.1 0.1 0.85 0.1 Features 0.75 0.1 0.4 0.1 High foward current transfer ratio hFE Satisfactory linearity of foward current transfer ratio hFE 2.3 0.2 I type package enabling direct soldering of

Power Transistors 2SD1750, 2SD1750A Silicon NPN triple diffusion planar type Darlington Unit mm For midium speed power switching 7.0 0.3 3.5 0.2 3.0 0.2 Complementary to 2SB1180 and 2SB1180A Features High foward current transfer ratio hFE 1.1 0.1 0.85 0.1 0.75 0.1 0.4 0.1 High-speed switching I type package enabling direct soldering of the radiating fin to the pr

Power Transistors 2SD1753 Silicon NPN triple diffusion planar type Unit mm 7.0 0.3 3.5 0.2 3.0 0.2 For power amplification with high forward current transfer ratio 1.1 0.1 0.85 0.1 Features 0.75 0.1 0.4 0.1 High foward current transfer ratio hFE Satisfactory linearity of foward current transfer ratio hFE 2.3 0.2 I type package enabling direct soldering of the radia

Power Transistors 2SD1752, 2SD1752A Silicon NPN epitaxial planar type For power amplification and low-voltage switching Unit mm 7.0 0.3 3.5 0.2 Complementary to 2SB1148 and 2SB1148A 3.0 0.2 Features Low collector to emitter saturation voltage VCE(sat) High-speed switching 1.1 0.1 0.85 0.1 Satisfactory linearity of foward current transfer ratio hFE 0.75 0.1 0.4 0.1

Power Transistors 2SD1751 Silicon NPN triple diffusion planar type Unit mm 7.0 0.3 3.5 0.2 For power amplification 3.0 0.2 Complementary to 2SB1170 Features 1.1 0.1 0.85 0.1 0.75 0.1 0.4 0.1 High forward current transfer ratio hFE which has satisfactory linearity Low collector to emitter saturation voltage VCE(sat) 2.3 0.2 I type package enabling direct solder

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD TO-252-2L Plastic-Encapsulate Transistors TO-252-2L 2SD1758 TRANSISTOR (NPN) 1.BASE 2.COLLECTOR FEATURES Low VCE(sat).VCE(sat) = 0.5V (Typ.)(IC/IB =2A/0.2A) 3.EMITTER 2 1 3 Equivalent Circuit D1758=Device code D 1 7 5 8 Solid dot=Green moldinn compound device, XXXX if none,the normal device XXXX=Code MAXIM

2SD1757K TRANSISTOR (NPN) SOT-23 FEATURES Optimal for muting. 1. BASE MAXIMUM RATINGS (TA=25 unless otherwise noted) 2. EMITTER 3. COLLECTOR Symbol Parameter Value Units VCBO Collector-Base Voltage 30 V VCEO Collector-Emitter Voltage 15 V VEBO Emitter-Base Voltage 6.5 V IC Collector Current -Continuous 500 mA PC Collector Power Dissipation 200 mW TJ Junction Temp

2SD1757K SOT-23 Transistor(NPN) 1. BASE SOT-23 2. EMITTER 3. COLLECTOR Features Optimal for muting. MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage 30 V VCEO Collector-Emitter Voltage 15 V Dimensions in inches and (millimeters) VEBO Emitter-Base Voltage 6.5 V IC Collector Current -Continuous 500 mA PC Collec

2SD1758(NPN) TO-251/TO-252-2L Transistor TO-251 1.BASE 2.COLLECTOR 3.EMITTER 1 2 3 Features Low VCE(sat).VCE(sat) = 0.5V (Typ.)(IC/IB =2A/0.2A) MAXIMUM RATINGS (TA=25 unless otherwise noted) TO-252-2L Symbol Parameter Value Units VCBO Collector-Base Voltage 40 V VCEO Collector-Emitter Voltage 32 V VEBO Emitter-Base Voltage 5 V IC Collector Current -Continuous 2 A PC

SMD Type Transistors NPN Transistors 2SD1758 TO-252 Unit mm +0.15 6.50-0.15 +0.1 Features 2.30 -0.1 +0.2 5.30-0.2 +0.8 0.50 -0.7 Low VCE (sat) Complementary to 2SB1182 0.127 +0.1 0.80-0.1 max + 0.1 1 Base 2.3 0.60- 0.1 +0.15 4 .60 -0.15 2 Collector 3 Emitter Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage V

INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SD1758 DESCRIPTION Low Collector Saturation Voltage- V = 0.5V(Typ)@ I = 2A CE(sat) C Complement to Type 2SB1182 Good Linearity of h FE 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS DC/DC converter,relay drivers,lamp drivers,motor drivers A