2SD1758 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Medium power transistor (32V, 2A) 2SD1766 / 2SD1758 / 2SD1862 Features Dimensions (Unit : mm) 1) Low VCE(sat). 2SD1766 2SD1758VCE(sat) = 0.5V (Typ.) 4.5+0.2-0.1(IC/IB = 2A / 0.2A) 2.3+0.26.50.2-0.11.5+0.2C0.51.60.1 -0.15.1+0.2-0.1 0.50.12) Complements the 2SB1188 / 2SB1182 / 2SB1240 (1) (2) (3)0.650.10.75Structure 0.4+0.1-0.050.90.4

Medium power transistor (32V, 2A) 2SD1758 / 2SD1862 Features Dimensions (Units : mm) 1) Low VCE(sat). 2SD1758 2SD1862VCE(sat) = 0.5V (Typ.) 2.50.22.3+0.2 6.80.26.50.2-0.1(IC/IB = 2A / 0.2A) C0.55.1+0.2-0.1 0.50.12) Complements the 2SB1182 / 2SB1240 0.650.10.750.65Max.Structure 0.90.550.1Epitaxial planar type NPN silicon transistor

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD TO-252-2L Plastic-Encapsulate TransistorsTO-252-2L 2SD1758 TRANSISTOR (NPN)1.BASE2.COLLECTOR FEATURES Low VCE(sat).VCE(sat) = 0.5V (Typ.)(IC/IB =2A/0.2A)3.EMITTER213 Equivalent Circuit D1758=Device code D 1 7 5 8Solid dot=Green moldinn compound device, XXXXif none,the normal deviceXXXX=CodeMAXIM

2SD1758(NPN) TO-251/TO-252-2L TransistorTO-2511.BASE 2.COLLECTOR 3.EMITTER 1 2 3 Features Low VCE(sat).VCE(sat) = 0.5V (Typ.)(IC/IB =2A/0.2A) MAXIMUM RATINGS (TA=25 unless otherwise noted) TO-252-2LSymbol Parameter Value UnitsVCBO Collector-Base Voltage 40 VVCEO Collector-Emitter Voltage 32 VVEBO Emitter-Base Voltage 5 VIC Collector Current -Continuous 2 A PC

SMD Type TransistorsNPN Transistors2SD1758TO-252Unit: mm+0.156.50-0.15+0.1 Features 2.30 -0.1+0.25.30-0.2 +0.80.50 -0.7 Low VCE (sat) Complementary to 2SB11820.127+0.10.80-0.1max+ 0.11 Base2.3 0.60- 0.1+0.154 .60 -0.152 Collector3 Emitter Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage V

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SD1758DESCRIPTIONLow Collector Saturation Voltage-: V = 0.5V(Typ)@ I = 2ACE(sat) CComplement to Type 2SB1182Good Linearity of hFE100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDC/DC converter,relay drivers,lamp drivers,motordriversA

2SD1757KTransistorsPower Transistor (15V, 0.5A)2SD1757K External dimensions (Units : mm) Features1) Low VCE(sat). (Typ.8mV at IC/IB = 10/1mA)2) Optimal for muting.1.6 Absolute maximum ratings (Ta = 25C)2.8Parameter Symbol Limits UnitCollector-base voltage VCBO 30 V0.3to0.6Collector-emitter voltage VCEO 15 VEach lead has same dimensionsEmitter-base voltage VEBO

2SD1757KDatasheetPower Transistor (15V, 500mA)lOutlinelParameter Value SMT3VCEO15VIC500mASOT-346SC-59 lFeaturesl1)Low VCE(sat). (Typ.8mV at IC/IB=10/1mA)lInner circuitl2)Optimal for muting.lApplicationlMUTING

2SD1759 / 2SD1861TransistorsPower transistor (40V, 2A)2SD1759 / 2SD1861 External dimensions (Units : mm) Features1) Darlington connection for high DC current gain.2SD17592) Built-in 4k resistor between base and emitter.5.5 1.53) Complements the 2SB1183 / 2SB1239.0.9C0.5 Equivalent circuit0.8Min.1.5C2.59.5BROHM : CPT3 (1) Base(2) CollectorEIAJ : SC-

Power Transistors2SD1755Silicon NPN epitaxial planar typeUnit: mm7.0 0.3 3.5 0.23.0 0.2For power amplification with high forward current transfer ratio1.1 0.1 0.85 0.1Features0.75 0.1 0.4 0.1High forward current transfer ratio hFE which has satisfactorylinearity2.3 0.2High emitter to base voltage VEBO4.6 0.4I type package enabling direct soldering

Power Transistors2SD1754, 2SD1754ASilicon NPN triple diffusion planar typeUnit: mm7.0 0.3 3.5 0.23.0 0.2For power amplification with high forward current transfer ratio1.1 0.1 0.85 0.1Features0.75 0.1 0.4 0.1High foward current transfer ratio hFESatisfactory linearity of foward current transfer ratio hFE2.3 0.2I type package enabling direct soldering of

Power Transistors2SD1750, 2SD1750ASilicon NPN triple diffusion planar type DarlingtonUnit: mmFor midium speed power switching7.0 0.3 3.5 0.23.0 0.2Complementary to 2SB1180 and 2SB1180AFeatures High foward current transfer ratio hFE1.1 0.1 0.85 0.10.75 0.1 0.4 0.1 High-speed switching I type package enabling direct soldering of the radiating fin tothe pr

Power Transistors2SD1753Silicon NPN triple diffusion planar typeUnit: mm7.0 0.3 3.5 0.23.0 0.2For power amplification with high forward current transfer ratio1.1 0.1 0.85 0.1Features0.75 0.1 0.4 0.1High foward current transfer ratio hFESatisfactory linearity of foward current transfer ratio hFE2.3 0.2I type package enabling direct soldering of the radia

Power Transistors2SD1752, 2SD1752ASilicon NPN epitaxial planar typeFor power amplification and low-voltage switchingUnit: mm7.0 0.3 3.5 0.2Complementary to 2SB1148 and 2SB1148A3.0 0.2Features Low collector to emitter saturation voltage VCE(sat) High-speed switching1.1 0.1 0.85 0.1 Satisfactory linearity of foward current transfer ratio hFE0.75 0.1 0.4 0.1

Power Transistors2SD1751Silicon NPN triple diffusion planar typeUnit: mm7.0 0.3 3.5 0.2For power amplification3.0 0.2Complementary to 2SB1170Features1.1 0.1 0.85 0.10.75 0.1 0.4 0.1 High forward current transfer ratio hFE which has satisfactorylinearity Low collector to emitter saturation voltage VCE(sat)2.3 0.2 I type package enabling direct solder

2SD1757K TRANSISTOR (NPN)SOT-23 FEATURES Optimal for muting. 1. BASE MAXIMUM RATINGS (TA=25 unless otherwise noted) 2. EMITTER 3. COLLECTOR Symbol Parameter Value UnitsVCBO Collector-Base Voltage 30 V VCEO Collector-Emitter Voltage 15 V VEBO Emitter-Base Voltage 6.5 V IC Collector Current -Continuous 500 mA PC Collector Power Dissipation 200 mW TJ Junction Temp

2SD1757K SOT-23 Transistor(NPN)1. BASE SOT-232. EMITTER 3. COLLECTOR Features Optimal for muting. MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value UnitsVCBO Collector-Base Voltage 30 V VCEO Collector-Emitter Voltage 15 V Dimensions in inches and (millimeters)VEBO Emitter-Base Voltage 6.5 V IC Collector Current -Continuous 500 mA PC Collec

isc Silicon NPN Darlington Power Transistor 2SD1756DESCRIPTIONCollector-Emitter Sustaining Voltage-: V = 170V(Min)CEO(SUS)High DC Current Gain: h = 1500(Min) @I = 5AFE CLow Collector Saturation VoltageMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high voltage high current amplifier applications.ABSOL