2SD1779 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Power Transistors2SD1773Silicon NPN triple diffusion planar type DarlingtonFor midium speed switchingUnit: mm10.0 0.2 4.2 0.2Complementary to 2SB11935.5 0.2 2.7 0.2Features 3.1 0.1High foward current transfer ratio hFEHigh-speed switchingFull-pack package which can be installed to the heat sink withone screw1.3 0.21.4 0.1+0.2Absolute Maximum Rat

Power Transistors2SD1772, 2SD1772ASilicon NPN triple diffusion planar typeFor power amplificationUnit: mmFor TV vertical deflection output10.0 0.2 4.2 0.2Complementary to 2SB1192 and 2SB1192A5.5 0.2 2.7 0.2Features 3.1 0.1Large collector power dissipation PCFull-pack package which can be installed to the heat sink withone screw1.3 0.21.4 0.1Absolu

Power Transistors2SD1776, 2SD1776ASilicon NPN triple diffusion planar typeFor power amplification with high forward current transfer ratioUnit: mmFeatures High foward current transfer ratio hFE10.0 0.2 4.2 0.2 Satisfactory linearity of foward current transfer ratio hFE 5.5 0.2 2.7 0.2 Full-pack package which can be installed to the heat sink withone screw 3.1 0

Power Transistors2SD1775, 2SD1775ASilicon NPN triple diffusion planar typeUnit: mmFor high-speed switching and high current amplification ratio 8.5 0.2 3.4 0.36.0 0.5 1.0 0.1Features High foward current transfer ratio hFE Satisfactory linearity of foward current transfer ratio hFE1.5max. 1.1max. N type package enabling direct soldering of the radiating fin tothe pr

Power Transistors2SD1771, 2SD1771ASilicon NPN triple diffusion planar typeUnit: mm8.5 0.2 3.4 0.3For power amplification6.0 0.5 1.0 0.1For TV vertical deflection outputComplementary to 2SB1191 and 2SB1191AFeatures 1.5max. 1.1max. High collector to emitter VCEO0.8 0.1 0.5max. Large collector power dissipation PC N type package enabling direct soldering of the

isc Silicon NPN Darlington Power Transistor 2SD1773DESCRIPTIONCollector-Emitter Sustaining Voltage-: V = 120V(Min.)CEO(SUS)Collector-Emitter Saturation Voltage-: V = 1.5V(Max) @I = 4ACE(sat) CHigh DC Current Gain: h = 1000(Min) @ I = 4A, V = 3VFE C CEComplement to Type 2SB1193Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationA

isc Silicon NPN Power Transistor 2SD1772DESCRIPTIONHigh Power DissipationHigh Collector-Emitter Breakdown Voltage-: V = 150V(Min.)(BR)CEOComplement to Type 2SB1192Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower amplifier applications.TV vertical deflection output applications.ABSOLUTE MAXIMUM RATINGS(T =25

isc Silicon NPN Power Transistor 2SD1778DESCRIPTIONHigh Collector Current:: I = 4ACLow Collector Saturation Voltage: V = 1.0V(Max)@I = 3ACE(sat) CWide Area of Safe OperationComplement to Type 2SB1334Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for low frequency power amplifier applications.ABSOLUTE MA

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD1772 2SD1772A DESCRIPTION With TO-220Fa package Complement to type 2SB1192/1192A Large collector power dissipation APPLICATIONS For power amplification For TV vertical deflection output PINNING PIN DESCRIPTION1 Base 2 CollectorFig.1 simplified outline (TO-220Fa) and symbol3 Emit

isc Silicon NPN Power Transistor 2SD1770DESCRIPTIONHigh Power DissipationHigh Collector-Emitter Breakdown Voltage-: V = 150V(Min.)(BR)CEOComplement to Type 2SB1190Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower amplifier applications.TV vertical deflection output applications.ABSOLUTE MAXIMUM RATINGS(T =25