2SD1787 Datasheet. Equivalente

 ..1. Size:342K  1
 2sd1787 2sd1921.pdf

 8.1. Size:153K  toshiba
 2sd1784.pdf

2SD1784 TOSHIBA Field Effect Transistor Silicon NPN Epitaxial Type (PCT process) (Darlington) 2SD1784 Micro Motor Drive, Hammer Drive Applications Unit mm Switching Applications Power Amplifier Applications High DC current gain hFE = 4000 (min) (V = 2 V, I = 150 mA) CE C Low saturation voltage V = 1.5 V (max) (I = 1 A, I = 1 mA) CE (sat) C B Maximum Ratings (Ta =

 8.2. Size:142K  nec
 2sd1780.pdf

 8.3. Size:1661K  rohm
 2sd1781k.pdf

2SD1781K Datasheet Medium Power Transistor (32V, 800mA) lOutline l Parameter Value SMT3 VCEO 32V IC 800mA SOT-346 SC-59 lFeatures l 1)Very low VCE(sat). lInner circuit l VCE(sat)=0.1V(Typ.) (IC/IB=500mA/50mA) 2)Higt current capacity in compact package. 3)Complements the 2SB1197K. lApplication l

 8.4. Size:934K  rohm
 2sd1782kfra.pdf

2SD1782KFRA 2SD1782K Transistors AEC-Q101 Qualified Power Transistor (80V, 0.5A) 2SD1782K 2SD1782KFRA External dimensions (Unit mm) Features 1) Low VCE(sat). 2.9 0.2 VCE(sat) =0.2V(Typ.) 1.1+0.2 1.9 0.2 -0.1 (IC / IB=0.5 A / 50mA) 0.8 0.1 0.95 0.95 2) High VCEO,VCEO=80V (1) (2) 0 0.1 2SB1198KFRA 3) Complements the 2SB1198K. (3) +0.1 0.15-0.06 +0.1 0.4 -0.0

 8.5. Size:1126K  rohm
 2sd1782k.pdf

2SD1782K Datasheet Power Transistor (80V, 500mA) lOutline l SOT-346 Parameter Value SC-59 VCEO 80V IC 500mA SMT3 lFeatures lInner circuit l l 1)Low VCE(sat) VCE(sat)=0.2V(Typ.) (IC/IB=500mA/50mA) 2)High breakdown voltage. BVCEO=80V 3)Complements the 2SB1198K lApplication l DRIVER lPackaging specifications l Basic

 8.6. Size:92K  rohm
 2sd1782.pdf

Transistors Power Transistor (80V, 0.5A) 2SD1782K FFeatures FExternal dimensions (Units mm) 1) Low VCE(sat). VCE(sat) = 0.2V (Typ.) (IC / IB = 0.5A / 50mA) 2) High VCEO, VCEO = 80V 3) Complements the 2SB1198K. FStructure Epitaxial planar type NPN silicon transistor FAbsolute maximum ratings (Ta = 25_C) (96-222-D93) 271 Transistors 2SD1782K FElectrical characteristics (Ta = 25_

 8.7. Size:969K  rohm
 2sd1781kfra.pdf

2SD1781KFRA 2SD1781K Transistors AEC-Q101 Qualified Medium Power Transistor (32V, 0.8A) 2SD1781K 2SD1781KFRA External dimensions (Unit mm) Features 1) Very Low VCE(sat). 2.9 0.2 VCE(sat) = 0.1V(Typ.) 1.1+0.2 1.9 0.2 -0.1 IC / IB= 500 A / 50mA 0.8 0.1 0.95 0.95 2) High current capacity in compact package. (1) (2) 0 0.1 3) Complements the 2SB1197K 2SB1197K. (3) +0

 8.8. Size:84K  utc
 2sd1782.pdf

UNISONIC TECHNOLOGIES CO., LTD 2SD1782 Preliminary NPN EPITAXIAL SILICON TRANSISTOR POWER NPN TRANSISTOR DESCRIPTION The UTC 2SD1782 is an NPN silicon transistor. it uses UTC s advanced technology to provide customers with high collector-emitter breakdown voltage, low collector-emitter saturation voltage and high DC current gain, etc. FEATURES * High collector-emitte

 8.9. Size:72K  secos
 2sd1781.pdf

2SD1781 0.8A, 40V NPN Silicon Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free SOT-23 FEATURES Very low VCE(sat).VCE(sat)

 8.10. Size:514K  jiangsu
 2sd1782.pdf

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors SOT-23 2SD1782 TRANSISTOR (NPN) FEATURES 1. BASE Low VCE(sat) 2. EMITTER High BVCEO 3. COLLECTOR Complements the 2SB1198 MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage 80 V VCEO Collector-Emitter Voltage 80 V VEBO Emitter-Bas

 8.11. Size:79K  jmnic
 2sd1789.pdf

Product Specification www.jmnic.com Silicon NPN Power Transistors 2SD1789 DESCRIPTION With ITO-220 package Switching power transistor PINNING PIN DESCRIPTION 1 Base 2 Collector 3 Emitter Fig.1 simplified outline (ITO-220) and symbol Absolute maximum ratings(Ta=25 ) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 200 V VCEO Collector-

 8.12. Size:79K  jmnic
 2sd1788.pdf

Product Specification www.jmnic.com Silicon NPN Power Transistors 2SD1788 DESCRIPTION With ITO-220 package Switching power transistor PINNING PIN DESCRIPTION 1 Base 2 Collector 3 Emitter Fig.1 simplified outline (ITO-220) and symbol Absolute maximum ratings(Ta=25 ) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 100 V VCEO Collector-

 8.13. Size:25K  sanken-ele
 2sd1785.pdf

Equivalent C circuit B Darlington 2SD1785 (2.5k )(200 ) E Silicon NPN Triple Diffused Planar Transistor (Complement to type 2SB1258) Application Driver for Solenoid, Relay and Motor, Series Regulator, and General Purpose Absolute maximum ratings (Ta=25 C) Electrical Characteristics (Ta=25 C) External Dimensions FM20(TO220F) Symbol 2SD1785 Unit Symbol Conditions 2SD1785 Unit

 8.14. Size:214K  lge
 2sd1781k sot-23-3l.pdf

2SD1781K SOT-23-3L Transistor(NPN) SOT-23-3L 1. BASE 2. EMITTER 2.92 0.35 3. COLLECTOR 1.17 Features 2.80 1.60 Low voltage High saturation current capability 0.15 1.90 MAXIMUM RATINGS (TA=25 unless otherwise noted) Dimensions in inches and (millimeters) Symbol Parameter Value Units VCBO 40 V Collector-Base Voltage VCEO Collector-Emitter Voltage 32 V VEBO Emit

 8.15. Size:118K  lrc
 l2sd1781kqlt1g.pdf

LESHAN RADIO COMPANY, LTD. Medium Power Transistor L2SD1781KQLT1G Series S-L2SD1781KQLT1G Series (32V, 0.8A) L2SD1781KQLT1G FFeatures 3 1) Very low VCE(sat). VCE(sat) t 0.4 V (Typ.) (IC / IB = 500mA / 50mA) 1 2) High current capacity in compact 2 package. 3) Complements the L2SB1197KXLT1G SOT-23 /TO-236AB 4) We declare that the material of product compliance with RoHS requireme

 8.16. Size:117K  lrc
 l2sd1781krlt1g.pdf

LESHAN RADIO COMPANY, LTD. Medium Power Transistor L2SD1781KQLT1G Series (32V, 0.8A) S-L2SD1781KQLT1G Series L2SD1781KQLT1G FFeatures 3 1) Very low VCE(sat). VCE(sat) t 0.4 V (Typ.) 1 (IC / IB = 500mA / 50mA) 2) High current capacity in compact 2 package. SOT-23 /TO-236AB 3) Complements the L2SB1197KXLT1G 4) We declare that the material of product compliance with RoHS requirem

 8.17. Size:1002K  kexin
 2sd1781.pdf

SMD Type Transistors NPN Transistors 2SD1781 (2SD1781K) SOT-23 Unit mm +0.1 2.9 -0.1 +0.1 0.4-0.1 Features 3 Very Low VCE(sat). High current capacity in compact package. Complimentary to 2SB1197(2SB1197K) 1 2 +0.1 +0.05 0.95 -0.1 0.1 -0.01 +0.1 1.9 -0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit C

 8.18. Size:335K  kexin
 2sd1782.pdf

SMD Type Transistors NPN Transistors 2SD1782 SOT-23 Unit mm 2.9+0.1 -0.1 +0.1 0.4-0.1 3 Features Collector Current Capability IC=0.5A Collector Emitter Voltage VCEO=80V 1 2 +0.1 +0.05 0.95 -0.1 0.1 -0.01 +0.1 1.9 -0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO 80 Collect

 8.19. Size:1067K  kexin
 2sd1784.pdf

SMD Type Transistors NPN Transistors 2SD1784 SOT-89 Unit mm 1.70 0.1 Features Collector Current Capability IC=1.5A Collector Emitter Voltage VCEO=30V 0.42 0.1 0.46 0.1 1.Base 2.Collector 3.Emitter Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO 30 Collector - Emitter Voltage VCEO 30 V Emitter - Base Voltage VE

 8.20. Size:221K  chenmko
 2sd1781kgp.pdf

CHENMKO ENTERPRISE CO.,LTD 2SD1781KGP SURFACE MOUNT NPN Switching Transistor VOLTAGE 32 Volts CURRENT 0.8 Ampere APPLICATION * Telephone and proferssional communction equipment. * Other switching applications. FEATURE SOT-23 * Small surface mounting type. (SOT-23) * Corrector peak current (Max.=1500mA). * Suitable for high packing density. * Low voltage (Max.=32V) . * High satur

 8.21. Size:1246K  slkor
 2sd1781q 2sd1781r.pdf

2SD1781 Plastic-Encapsulate Transistors SOT-23 (NPN) FEATURES Very low VCE(sat). VCE(sat)

 8.22. Size:542K  cn shikues
 2sd1781k-q 2sd1781k-r.pdf

2SD1781K Silicon Epitaxial Planar Transistor FEATURES High Collector Current.(IC= 500mA Complementary To 2SB1197K Excellent HFE Linearity. High total power dissipation.(PC=300mW) APPLICATIONS High Collector Current. MAXIMUM RATING @ Ta=25 unless otherwise specified CLASSIFICATION OF hFE(1) REV.08 1 of 4 2SD1781K ELECTRICAL CHARACTERISTICS @ Ta=25 unle

 8.23. Size:201K  inchange semiconductor
 2sd1789.pdf

INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor 2SD1789 DESCRIPTION Collector-Emitter Sustaining Voltage- V = 200V (Min.) CEO(SUS) High Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for audio frequency power amplifier and low speed high current switching industrial use. ABSOLUTE M

 8.24. Size:201K  inchange semiconductor
 2sd1788.pdf

INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor 2SD1788 DESCRIPTION Collector-Emitter Sustaining Voltage- V = 100V (Min.) CEO(SUS) High Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for audio frequency power amplifier and low speed high current switching industrial use. ABSOLUTE M

 8.25. Size:185K  inchange semiconductor
 2sd1783.pdf

INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor 2SD1783 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 60V(Min) (BR)CEO High DC Current Gain h = 2000(Min) @I = 2A FE C Low Saturation Voltage Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use as complementary AF push-pull output sta

 8.26. Size:211K  inchange semiconductor
 2sd1785.pdf

isc Silicon NPN Darlington Power Transistor 2SD1785 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 120V(Min) (BR)CEO Collector-Emitter Saturation Voltage- V = 1.5V(Max) @I = 2A CE(sat) C High DC Current Gain h = 2000(Min) @ I = 3A, V = 2V FE C CE Complement to Type 2SB1258 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPL