2SD1796
. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 2SD1796
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 25
W
Tensión colector-base (Vcb): 60
V
Tensión colector-emisor (Vce): 60
V
Tensión emisor-base (Veb): 6
V
Corriente del colector DC máxima (Ic): 4
A
Temperatura operativa máxima (Tj): 150
°C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 60
MHz
Capacitancia de salida (Cc): 45
pF
Ganancia de corriente contínua (hfe): 2000
Paquete / Cubierta:
TO220F
FM20
Búsqueda de reemplazo de transistor bipolar 2SD1796
2SD1796
Datasheet (PDF)
..1. Size:26K sanken-ele
2sd1796.pdf
Equivalent CcircuitBBuilt-in Avalanche Diode for Surge AbsorbingDarlington 2SD1796(3k)(150)ESilicon NPN Triple Diffused Planar TransistorApplication : Driver for Solenoid, Relay and Motor and General Purpose Absolute maximum ratings (Ta=25C) Electrical Characteristics (Ta=25C) External Dimensions FM20(TO220F)SymbolSymbol 2SD1796 Unit Conditions 2SD1796 Unit
8.1. Size:78K sanyo
2sd1799.pdf
Ordering number:EN2110BNPN Epitaxial Planar Silicon Transistor2SD1799Driver ApplicationsApplications Package Dimensions Motor drivers, printer hammer drivers, relay drivers,unit:mmvoltage regulator control.2045B[2SD1799]6.5Features2.35.00.54 High DC current gain (hFE 4000). Wide ASO. Large current capacity. Small and slim package making it
8.2. Size:203K shindengen
tp7l10 2sd1791.pdf
SHINDENGENDarlington TransistorOUTLINE DIMENSIONS2SD1791 Case : ITO-220(TP7L10) Unit : mm7A NPNRATINGSAbsolute Maximum Ratings ConditionsItem Symbol Ratings UnitStorage Temperature Tstg -55+150 Junction Temperature Tj +150 Collector to Base Voltage VCBO 100 VCollector to Emitter Voltage VCEO 100 VEmitter to Base VoltageVEBO 7 VCollector Current DC I
8.3. Size:259K inchange semiconductor
2sd1794.pdf
INCHANGE Semiconductor isc Product Specification isc Silicon NPN Darlington Power Transistor 2SD1794 DESCRIPTION Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 200V (Min.) High Switching Speed APPLICATIONS Designed for audio frequency power amplifier and low speed high current switching industrial use. ABSOLUTE MAXIMUM RATINGS (Ta=25) SYMBOL PARAMETER VALUE UN
8.4. Size:201K inchange semiconductor
2sd1793.pdf
INCHANGE Semiconductorisc Silicon NPN Darlington Power Transistor 2SD1793DESCRIPTIONCollector-Emitter Sustaining Voltage-: V = 100V (Min.)CEO(SUS)High Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for audio frequency power amplifier and lowspeed high current switching industrial use.ABSOLUTE M
8.5. Size:116K inchange semiconductor
2sd1792.pdf
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD1792 DESCRIPTION With ITO-220 package Switching power transistor DARLINGTON PINNING PIN DESCRIPTION1 Base 2 CollectorFig.1 simplified outline (ITO-220) and symbol 3 EmitterAbsolute maximum ratings(Ta=25) SYMBOL PARAMETER CONDITIONS VALUE UNITVCBO Collector-base voltage Open emitter
8.6. Size:201K inchange semiconductor
2sd1790.pdf
INCHANGE Semiconductorisc Silicon NPN Darlington Power Transistor 2SD1790DESCRIPTIONLow Collector Saturation VoltageHigh DC Current GainHigh ReliabilityMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for audio frequency power amplifier and lowspeed high current switching industrial use.ABSOLUTE MAXIMUM RATINGS
8.7. Size:85K inchange semiconductor
2sd1795.pdf
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD1795 DESCRIPTION With ITO-220 package Switching power transistor DARLINGTON PINNING PIN DESCRIPTION1 Base 2 CollectorFig.1 simplified outline (ITO-220) and symbol 3 EmitterAbsolute maximum ratings(Ta=25) SYMBOL PARAMETER CONDITIONS VALUE UNITVCBO Collector-base voltage Open emitter
8.8. Size:200K inchange semiconductor
2sd1791.pdf
INCHANGE Semiconductorisc Silicon NPN Darlington Power Transistor 2SD1791DESCRIPTIONCollector-Emitter Sustaining Voltage-: V = 100V (Min.)CEO(SUS)High Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for audio frequency power amplifier and lowspeed high current switching industrial use.ABSOLUTE M
Otros transistores... 2N3200
, 2N3201
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, 2N3204
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, 2N3206
, 2N3207
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, 2N3209DCSM
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, 2N3211
.