2SD1803. Equivalente. Reemplazo. Todos los transistores. Hoja de especificaciones. Principales características

2SD1803 Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: 2SD1803

Material: Si

Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 20 W

Tensión colector-base (Vcb): 60 V

Tensión colector-emisor (Vce): 50 V

Tensión emisor-base (Veb): 6 V

Corriente del colector DC máxima (Ic): 5 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Transición de frecuencia (fT): 180 MHz

Capacitancia de salida (Cc): 40 pF

Ganancia de corriente contínua (hFE): 70

Encapsulados: TO251

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2SD1803 datasheet

..1. Size:111K sanyo
2sb1203 2sd1803.pdf pdf_icon

Ordering number ENN2085B PNP/NPN Epitaxial Planar Silicon Transistors 2SB1203/2SD1803 High-Current Switching Applications Applications Package Dimensions Relay drivers, high-speed inverters, converters, and unit mm other general high-current switching applications. 2045B [2SB1203/2SD1803] 6.5 Features 2.3 5.0 0.5 4 Low collector-to-emitter saturation voltage. High c

..2. Size:168K sanyo
2sd1803.pdf pdf_icon

Ordering number EN2085B PNP/NPN Epitaxial Planar Silicon Transistors 2SB1203/2SD1803 High-Current Switching Applications Applications Package Dimensions Relay drivers, high-speed inverters, converters, and unit mm other general high-current switching applications. 2045B [2SB1203/2SD1803] Features Low collector-to-emitter saturation voltage. High current and high fT.

..3. Size:392K onsemi
2sb1203 2sd1803.pdf pdf_icon

..4. Size:261K utc
2sd1803.pdf pdf_icon

UNISONIC TECHNOLOGIES CO., LTD 2SD1803 NPN SILICON TRANSISTOR HIGH CURRENT SWITCHING APPLICATION DESCRIPTION The UTC 2SD1803 applies to relay drivers, high-speed inverters, converters, and other general high-current switching applications. FEATURES *Low Collector-To-Emitter Saturation Voltage. *High Current And High fT. *Excellent Linearity Of hFE. *Fast Switchin

..5. Size:1008K kexin
2sd1803.pdf pdf_icon

SMD Type Transistors NPN Transistors 2SD1803 TO-252 Unit mm +0.15 6.50-0.15 +0.1 2.30 -0.1 +0.2 5.30-0.2 +0.8 0.50 -0.7 Features Low Collector-to-Emitter Saturation Voltage Fast Switching Speed 0.127 +0.1 High Current And High fT. 0.80-0.1 max Complementary to 2SB1203 + 0.1 1 Base 2.3 0.60- 0.1 +0.15 4 .60 -0.15 2 Collector 3 Emitter Absol

..6. Size:215K inchange semiconductor
2sd1803.pdf pdf_icon

isc Silicon NPN Power Transistor 2SD1803 DESCRIPTION High Collector Current-I = 5.0A C Low Saturation Voltage - V = 0.4V(Max)@ I = 3.0A, I = 0.15A CE(sat) C B Good Linearity of h FE Complement to Type 2SB1203 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Relay drivers,high-speed inverters,converters, and other general

8.1. Size:159K 1
2sd1809.pdf pdf_icon

8.2. Size:150K sanyo
2sd1802.pdf pdf_icon

Ordering number EN2113B PNP/NPN Epitaxial Planar Silicon Transistors 2SB1202/2SD1802 High-Current Switching Applications Applications Package Dimensions Voltage regulators, relay drivers, lamp drivers, unit mm electrical equipment. 2045B [2SB1202/2SD1802] Features Adoption of FBET, MBIT processes. Large currrent capacity and wide ASO. Low collector-to-emitter satura

8.3. Size:158K sanyo
2sd1804.pdf pdf_icon

Ordering number EN2086B PNP/NPN Epitaxial Planar Silicon Transistors 2SB1204/2SD1804 High-Current Switching Applications Applications Package Dimensions Relay drivers, high-speed inverters, converters, and unit mm other general high-current switching applications. 2045B [2SB1204/2SD1804] Features Low collector-to-emitter saturation voltage. High current and high fT.

8.4. Size:111K sanyo
2sb1201 2sd1801.pdf pdf_icon

Ordering number ENN2112B PNP/NPN Epitaxial Planar Silicon Transistors 2SB1201/2SD1801 High-Current Switching Applications Applications Package Dimensions Voltage regulators, relay drivers, lamp drivers, unit mm electrical equipment. 2045B [2SB1201/2SD1801] Features 6.5 2.3 5.0 Adoption of FBET, MBIT processes. 0.5 4 Large current capacity and wide ASO. Low colle

8.5. Size:143K sanyo
2sd1801.pdf pdf_icon

Ordering number EN2112B PNP/NPN Epitaxial Planar Silicon Transistors 2SB1201/2SD1801 High-Current Switching Applications Applications Package Dimensions Voltage regulators, relay drivers, lamp drivers, unit mm electrical equipment. 2045B [2SB1201/2SD1801] Features Adoption of FBET, MBIT processes. Large current capacity and wide ASO. Low collector-to-emitter saturat

8.6. Size:88K sanyo
2sd1806.pdf pdf_icon

Ordering number EN2116B NPN Epitaxial Planar Silicon Transistor 2SD1806 High-Current Switching Applications Applications Package Dimensions Relay control, motor control, switching. unit mm 2045B Features [2SD1806] 6.5 Low saturation voltage. 2.3 5.0 0.5 4 On-chip diode between collector and emitter. Small and slim package permitting 2SD1806-applied sets to be made

8.7. Size:78K sanyo
2sd1800.pdf pdf_icon

Ordering number EN2111B NPN Epitaxial Planar Silicon Transistor 2SD1800 Driver Applications Applications Package Dimensions Relay drivers, hammer drivers, lamp drivers, motor unit mm drivers. 2045B [2SD1800] 6.5 Features 2.3 5.0 0.5 4 High DC current gain (hFE 4000). Large current capacity. Small and slim package making it easy to make 2SD1800-applied sets

8.8. Size:162K sanyo
2sd1805.pdf pdf_icon

Ordering number EN2115B NPN Epitaxial Planar Silicon Transistor 2SD1805 High-Current Switching Applications Applications Package Dimensions Strobes, voltage regulators, relay drivers, lamp unit mm drivers. 2045B [2SD1805] 6.5 Features 2.3 5.0 0.5 4 Low saturation voltage. Fast switching time. Large current capacity. Small and slim package making it easy to

8.9. Size:58K sanyo
2sb1202 2sd1802.pdf pdf_icon

Ordering number ENN2113B PNP/NPN Epitaxial Planar Silicon Transistors 2SB1202/2SD1802 High-Current Switching Applications Applications Package Dimensions Voltage regulators, relay drivers, lamp drivers, unit mm electrical equipment. 2045B [2SB1202/2SD1802] 6.5 Features 2.3 5.0 0.5 4 Adoption of FBET, MBIT processes. Large currrent capacity and wide ASO. Low col

8.10. Size:388K onsemi
2sb1201 2sd1801.pdf pdf_icon

Ordering number EN2112C 2SB1201/2SD1801 Bipolar Transistor http //onsemi.com ( ) ( ) ( ) ( ) 50V, 2A, Low VCE sat , PNP NPN Single TP/TP-FA Applications Voltage regulators, relay drivers, lamp drivers, electrical equipment Features Adoption of FBET, MBIT processes Large current capacitance and wide ASO Low collector-to-emitter saturation voltage Fast swit

8.11. Size:399K onsemi
2sd1805.pdf pdf_icon

Ordering number EN2115C 2SD1805 Bipolar Transistor http //onsemi.com ( ) 20V, 5A, Low VCE sat , NPN Single TP/TP-FA Applications Strobes, voltage regulators, relay drivers, lamp drivers Features Low saturation voltage Fast switching time Large current capacity Small and slim package making it easy to make 2SD1805-applied sets smaller Specifications Absolute

8.12. Size:278K onsemi
2sb1202 2sd1802.pdf pdf_icon

2SB1202/2SD1802 Bipolar Transistor ( )50 V, ( )3 A, Low VCE(sat) (PNP)NPN Single TP/TP-FA Features www.onsemi.com Adoption of FBET and MBIT Processes Large Current Capacitance and Wide ASO 2.4 Low Collector to Emitter Saturation Voltage Fast Switching Speed 1 Small and Slim Package Making it Easy to Make 2SB1202/2SD1802-used Sets Smaller 3 These Devices

8.13. Size:173K utc
2sd1802.pdf pdf_icon

UNISONIC TECHNOLOGIES CO., LTD 2SD1802 NPN SILICON TRANSISTOR HIGH CURRENT SWITCHING APPLICATION DESCRIPTION The UTC 2SD1802 applies to voltage regulators, relay drivers, lamp drivers and electrical equipment. FEATURES * Adoption of FBET, MBIT processes * Large current capacity and wide ASO * Low collector-to-emitter saturation voltage * Fast switching speed ORDERI

8.14. Size:235K utc
2sd1804.pdf pdf_icon

UNISONIC TECHNOLOGIES CO., LTD 2SD1804 NPN SILICON TRANSISTOR HIGH CURRENT SWITCHING APPLICATIONS 1 TO-220 FEATURES * Low collector-to-emitter saturation voltage * High current and high fT 1 * Excellent linerarity of hFE. TO-251 * Fast switching time * Small and slim package making it easy to make UTC 2SD1804 applied sets smaller. 1 TO-252 ORDERING INFORMATIO

8.15. Size:2971K jiangsu
2sd1802.pdf pdf_icon

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-252-2L Plastic-Encapsulate Transistors TO-252 -2L 2SD1802 TRANSISTOR (NPN) FEATURES 1.BASE Adoption of FBET,MBIT Processes 2.COLLECTOR Large Current Capacity and Wide ASO Low Collector-to-Emitter Saturation Voltage 3.EMITTER Fast Switching Speed MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Para

8.16. Size:217K lge
2sd1802.pdf pdf_icon

2SD1802(NPN) TO-251/TO-252-2L Transistor TO-251 1.BASE 2.COLLECTOR 3.EMITTER 1 2 3 Features Adoption of FBET,MBIT processes Large current capacity and wide ASO Low collector-to-emitter saturation voltage Fast switching speed TO-252-2L MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector Base Voltage 60 V VCEO Collector-Emi

8.17. Size:299K wietron
2sd1802.pdf pdf_icon

2SD1802 NPN PLASTIC ENCAPSULATE TRANSISTORS P b Lead(Pb)-Free 1.BASE 3 2.COLLECTOR 2 3.EMITTER 1 D-PAK(TO-252) ABSOLUTE MAXIMUM RATINGS (TA=25 C) Rating Symbol Limits Unit VCBO V Collector-Base Voltage 60 VCEO V Collector-Emitter Voltage 50 VEBO V Emitter-Base Voltage 6.0 Collector Current IC A 3.0 Collector Power Dissipation PD 1.0 W Junction Temperature Tj -55 to +

8.18. Size:1176K kexin
2sd1802.pdf pdf_icon

SMD Type Transistors NPN Transistors 2SD1802 TO-252 Unit mm +0.15 6.50-0.15 +0.1 2.30 -0.1 +0.2 5.30-0.2 +0.8 Features 0.50 -0.7 Low Collector-to-Emitter Saturation Voltage Fast Switching Speed Large Current Capacity and Wide ASO 0.127 +0.1 0.80-0.1 max Complementary to 2SB1202 + 0.1 1 Base 2.3 0.60- 0.1 +0.15 4.60 -0.15 2 Collector 3 Emitter

8.19. Size:1057K kexin
2sd1804.pdf pdf_icon

SMD Type Transistors NPN Transistors 2SD1804 TO-252 Unit mm +0.15 6.50-0.15 +0.1 2.30 -0.1 +0.2 5.30-0.2 +0.8 0.50 -0.7 Features Low Collector-to-Emitter Saturation Voltage Fast Switching Speed 0.127 +0.1 High Current And High fT. 0.80-0.1 max Complementary to 2SB1204 + 0.1 1 Base 2.3 0.60- 0.1 +0.15 4 .60 -0.15 2 Collector 3 Emitter Absol

8.20. Size:1586K kexin
2sd1801.pdf pdf_icon

SMD Type Transistors NPN Transistors 2SD1801 TO-252 Unit mm 6.50+0.15 -0.15 +0.1 2.30 -0.1 5.30+0.2 0.50 -0.7 -0.2 +0.8 Features Low collector-to-emitter saturation voltage. Fast switching speed. 0.127 Complementary to 2SB1201 0.80+0.1 max -0.1 2.3 0.60+ 0.1 1 Base - 0.1 +0.15 4.60 -0.15 2 Collector 3 Emitter Absolute Maximum Ratings Ta = 25 Pa

8.21. Size:1205K kexin
2sd1805.pdf pdf_icon

SMD Type Transistors NPN Transistors 2SD1805 TO-252 Unit mm +0.15 6.50-0.15 +0.1 2.30 -0.1 +0.2 5.30-0.2 +0.8 0.50 -0.7 Features Low Collector-to-Emitter Saturation Voltage Fast Switching Speed 0.127 +0.1 0.80-0.1 Large current capacity max + 0.1 1 Base 2.3 0.60- 0.1 +0.15 4.60 -0.15 2 Collector 3 Emitter Absolute Maximum Ratings Ta = 25 Par

8.22. Size:228K inchange semiconductor
2sd1802.pdf pdf_icon

INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SD1802 DESCRIPTION Large current capacitance and wide ASO Small and slim package making it easy to make2SD1802/ 2SB1202-used set smaller Low collector-to-emitter saturation voltage Fast switching speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATION

8.23. Size:212K inchange semiconductor
2sd1804.pdf pdf_icon

INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SD1804 DESCRIPTION Excellent linearity of h FE Low Collector-Emitter Breakdown Voltage- V = 50 V (BR)CEO Fast switching time Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Relay drivers, high-speed inverters , converters and Other general high current switching appl

8.24. Size:228K inchange semiconductor
2sd1801.pdf pdf_icon

INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SD1801 DESCRIPTION Large current capacitance and wide ASO Small and slim package making it easy to make 2SD1801/2SB1201-used set smaller Low collector-to-emitter saturation voltage Fast switching speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATION

8.25. Size:228K inchange semiconductor
2sd1805.pdf pdf_icon

INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SD1805 DESCRIPTION High current capacity Small and slim package making it easy to make 2SD1805-used set smaller Low collector-to-emitter saturation voltage Fast switching speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Strobes,voltage regu

8.26. Size:209K inchange semiconductor
2sd180.pdf pdf_icon

isc Silicon NPN Power Transistors 2SD180 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 70V(Min.) (BR)CEO Low Collector Saturation Voltage- V = 1.5V(Max.)@ I = 5A CE(sat) C Good Linearity of h FE Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Audio frequency power amplifier and low speed switching Suitable for

8.27. Size:205K inchange semiconductor
2sd1804l-t.pdf pdf_icon

isc Silicon NPN Power Transistor 2SD1804L-T DESCRIPTION Excellent linearity of h FE Low Collector-Emitter Breakdown Voltage- V = 50 V (BR)CEO Fast switching time Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Relay drivers, high-speed inverters , converters and Other general high current switching applications ABSOLUTE MA

8.28. Size:195K inchange semiconductor
2sd1804-t.pdf pdf_icon

INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SD1804-T DESCRIPTION Excellent linearity of h FE Low collector-to-emitter saturation voltage Fast switching speed Complementary to 2SB1204 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Relay drivers, high-speed inverters , converters and Other general high current s

Otros transistores... 2SD1801S , 2SD1801T , 2SD1801U , 2SD1802 , 2SD1802R , 2SD1802S , 2SD1802T , 2SD1802U , D880 , 2SD1803Q , 2SD1803R , 2SD1803S , 2SD1803T , 2SD1804 , 2SD1804Q , 2SD1804R , 2SD1804S .