2SD1803Q . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 2SD1803Q
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 20 W
Tensión colector-base (Vcb): 60 V
Tensión colector-emisor (Vce): 50 V
Tensión emisor-base (Veb): 6 V
Corriente del colector DC máxima (Ic): 5 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 180 MHz
Capacitancia de salida (Cc): 40 pF
Ganancia de corriente contínua (hfe): 70
Paquete / Cubierta: TO251
Búsqueda de reemplazo de transistor bipolar 2SD1803Q
2SD1803Q Datasheet (PDF)
2sb1203 2sd1803.pdf
Ordering number:ENN2085BPNP/NPN Epitaxial Planar Silicon Transistors2SB1203/2SD1803High-Current Switching ApplicationsApplications Package Dimensions Relay drivers, high-speed inverters, converters, andunit:mmother general high-current switching applications.2045B[2SB1203/2SD1803]6.5Features2.35.00.54 Low collector-to-emitter saturation voltage. High c
2sd1803.pdf
Ordering number:EN2085BPNP/NPN Epitaxial Planar Silicon Transistors2SB1203/2SD1803High-Current Switching ApplicationsApplications Package Dimensions Relay drivers, high-speed inverters, converters, andunit:mmother general high-current switching applications.2045B[2SB1203/2SD1803]Features Low collector-to-emitter saturation voltage. High current and high fT.
2sb1203 2sd1803.pdf
Ordering number : EN2085C2SB1203/2SD1803Bipolar Transistorhttp://onsemi.com() () ( ) ( )50V, 5A, Low VCE sat , PNP NPN Single TP/TP-FAApplications Relay drivers, high-speed inverters, converters, and other general high-current switching applicationsFeatures Low collector-to-emitter saturation voltage High current and high fT Excellent linearity of hFE
2sd1803.pdf
UNISONIC TECHNOLOGIES CO., LTD 2SD1803 NPN SILICON TRANSISTOR HIGH CURRENT SWITCHING APPLICATION DESCRIPTION The UTC 2SD1803 applies to relay drivers, high-speed inverters, converters, and other general high-current switching applications. FEATURES *Low Collector-To-Emitter Saturation Voltage. *High Current And High fT. *Excellent Linearity Of hFE. *Fast Switchin
2sd1803.pdf
SMD Type TransistorsNPN Transistors2SD1803TO-252Unit: mm+0.156.50-0.15+0.12.30 -0.1+0.25.30-0.2 +0.80.50 -0.7 Features Low Collector-to-Emitter Saturation Voltage Fast Switching Speed0.127+0.1 High Current And High fT. 0.80-0.1max Complementary to 2SB1203+ 0.11 Base2.3 0.60- 0.1+0.154 .60 -0.152 Collector3 Emitter Absol
2sd1803.pdf
isc Silicon NPN Power Transistor 2SD1803DESCRIPTIONHigh Collector Current-I = 5.0ACLow Saturation Voltage -: V = 0.4V(Max)@ I = 3.0A, I = 0.15ACE(sat) C BGood Linearity of hFEComplement to Type 2SB1203Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSRelay drivers,high-speed inverters,converters,and other general
Otros transistores... 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
