2SD1803Q Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 2SD1803Q
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 20 W
Tensión colector-base (Vcb): 60 V
Tensión colector-emisor (Vce): 50 V
Tensión emisor-base (Veb): 6 V
Corriente del colector DC máxima (Ic): 5 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (fT): 180 MHz
Capacitancia de salida (Cc): 40 pF
Ganancia de corriente contínua (hFE): 70
Encapsulados: TO251
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2SD1803Q datasheet
2sb1203 2sd1803.pdf
Ordering number ENN2085B PNP/NPN Epitaxial Planar Silicon Transistors 2SB1203/2SD1803 High-Current Switching Applications Applications Package Dimensions Relay drivers, high-speed inverters, converters, and unit mm other general high-current switching applications. 2045B [2SB1203/2SD1803] 6.5 Features 2.3 5.0 0.5 4 Low collector-to-emitter saturation voltage. High c
2sd1803.pdf
Ordering number EN2085B PNP/NPN Epitaxial Planar Silicon Transistors 2SB1203/2SD1803 High-Current Switching Applications Applications Package Dimensions Relay drivers, high-speed inverters, converters, and unit mm other general high-current switching applications. 2045B [2SB1203/2SD1803] Features Low collector-to-emitter saturation voltage. High current and high fT.
2sd1803.pdf
UNISONIC TECHNOLOGIES CO., LTD 2SD1803 NPN SILICON TRANSISTOR HIGH CURRENT SWITCHING APPLICATION DESCRIPTION The UTC 2SD1803 applies to relay drivers, high-speed inverters, converters, and other general high-current switching applications. FEATURES *Low Collector-To-Emitter Saturation Voltage. *High Current And High fT. *Excellent Linearity Of hFE. *Fast Switchin
Otros transistores... 2SD1801T , 2SD1801U , 2SD1802 , 2SD1802R , 2SD1802S , 2SD1802T , 2SD1802U , 2SD1803 , 13005 , 2SD1803R , 2SD1803S , 2SD1803T , 2SD1804 , 2SD1804Q , 2SD1804R , 2SD1804S , 2SD1804T .
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