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2SD1814 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: 2SD1814

Material: Si

Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 30 W

Tensión colector-base (Vcb): 120 V

Corriente del colector DC máxima (Ic): 10 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Ganancia de corriente contínua (hfe): 5000

Empaquetado / Estuche: TO126

Búsqueda de reemplazo de transistor bipolar 2SD1814

 

2SD1814 Datasheet (PDF)

8.1. 2sb1216 2sd1816.pdf Size:60K _sanyo

2SD1814
2SD1814

Ordering number:ENN2540APNP/NPN Epitaxial Planar Silicon Transistors2SB1216/2SD1816High-Current Switching ApplicationsApplications Package Dimensions Suitable for relay drivers, high-speed inverters,unit:mmconverters, and other general high-current switching2045Bapplications.[2SB1216/2SD1816]6.52.35.00.54Features Low collector-to-emitter saturation voltag

8.2. 2sd1815.pdf Size:154K _sanyo

2SD1814
2SD1814

Ordering number:EN2539BPNP/NPN Epitaxial Planar Silicon Transistors2SB1215/2SD1815High-Current Switching ApplicationsApplications Package Dimensions Relay drivers, high-speed inverters, converters, andunit:mmother general high-current switching applications.2045B[2SB1215/2SD1815]Features Low collector-to-emitter saturation voltage. Excllent linearity of hFE.

 8.3. 2sd1816.pdf Size:152K _sanyo

2SD1814
2SD1814

Ordering number:EN2540APNP/NPN Epitaxial Planar Silicon Transistors2SB1216/2SD1816High-Current Switching ApplicationsApplications Package Dimensions Suitable for relay drivers, high-speed inverters,unit:mmconverters, and other general high-current switching2045Bapplications.[2SB1216/2SD1816]Features Low collector-to-emitter saturation voltage. Good linearity o

8.4. 2sd1817.pdf Size:75K _sanyo

2SD1814
2SD1814

Ordering number:EN2369ANPN Epitaxial Planar Silicon Transistor2SD1817Driver ApplicationsApplications Package Dimensions Motor drivers, hammer drivers, relay drivers. unit:mm2045BFeatures [2SD1817]6.5 High DC current gain. 2.35.00.54 Small and slim package permitting the 2SD1817-applied sets to be made more compact.0.850.71.21 : Base0.60.52 : Co

 8.5. 2sb1215 2sd1815.pdf Size:60K _sanyo

2SD1814
2SD1814

Ordering number:ENN2539BPNP/NPN Epitaxial Planar Silicon Transistors2SB1215/2SD1815High-Current Switching ApplicationsApplications Package Dimensions Relay drivers, high-speed inverters, converters, andunit:mmother general high-current switching applications.2045B[2SB1215/2SD1815]6.5Features2.35.00.54 Low collector-to-emitter saturation voltage. Exclle

8.6. 2sd1818.pdf Size:196K _nec

2SD1814
2SD1814

8.7. 2sd1819a e.pdf Size:40K _panasonic

2SD1814
2SD1814

Transistor2SD1819ASilicon NPN epitaxial planer typeFor general amplificationUnit: mmComplementary to 2SB1218A2.1 0.10.425 1.25 0.1 0.425FeaturesHigh foward current transfer ratio hFE.1Low collector to emitter saturation voltage VCE(sat).S-Mini type package, allowing downsizing of the equipment and3automatic insertion through the tape packing and the magazine2

8.8. 2sd1819.pdf Size:36K _panasonic

2SD1814
2SD1814

Transistor2SD1819ASilicon NPN epitaxial planer typeFor general amplificationUnit: mmComplementary to 2SB1218A2.1 0.10.425 1.25 0.1 0.425FeaturesHigh foward current transfer ratio hFE.1Low collector to emitter saturation voltage VCE(sat).S-Mini type package, allowing downsizing of the equipment and3automatic insertion through the tape packing and the magazine2

8.9. 2sd1816.pdf Size:237K _utc

2SD1814
2SD1814

UNISONIC TECHNOLOGIES CO., LTD 2SD1816 NPN PLANAR TRANSISTOR HIGH CURRENT SWITCHIG APPLICATIONS FEATURES * Low collector-to-emitter saturation voltage * Good linearity of hFE * Small and slim package facilitating compactness of sets. * High fT * Fast switching speed ORDERING INFORMATION Ordering Number Pin Assignment Package Packing Lead Free Halogen Free 1 2 32S

8.10. 2sd1819a.pdf Size:381K _secos

2SD1814
2SD1814

2SD1819A 0.1A , 60V NPN Plastic-Encapsulate Transistor Elektronische Bauelemente 24RoHS Compliant Product A suffix of -C specifies halogen & lead-free SOT-323 FEATURES High DC Current Gain. Low collector to emitter saturation voltage VCE(sat). AL Complementary to 2SB1218A 33 Top View C B11 22APPLICATION K E General purpose amplification. DH

8.11. 2sd1815.pdf Size:442K _kexin

2SD1814

SMD Type TransistorsNPN Transistors2SD1815TO-252Unit: mm+0.156.50-0.15+0.12.30 -0.1+0.25.30-0.2 +0.80.50 -0.7 Features Low Collector-to-Emitter Saturation Voltage Fast Switching Speed0.127+0.1 High fT.0.80-0.1max Complementary to 2SB1215+ 0.11 Base2.3 0.60- 0.1+0.154 .60 -0.152 Collector3 Emitter Absolute Maximum Rati

8.12. 2sd1819a.pdf Size:838K _kexin

2SD1814
2SD1814

SMD Type TransistorsNPN Transistors2SD1819A Features Low Collector-to-Emitter Saturation Voltage High foward current transfer ratio hFE. Complementary to 2SB1218A1 Base2 Emitter3 Collector Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 60 Collector - Emitter Voltage VCEO 50 V Emitter - Base Voltage VEBO

8.13. 2sd1816.pdf Size:1132K _kexin

2SD1814
2SD1814

SMD Type TransistorsNPN Transistors2SD1816TO-252Unit: mm+0.156.50-0.15+0.12.30 -0.1+0.25.30-0.2 +0.80.50 -0.7 Features Low Collector-to-Emitter Saturation Voltage Fast Switching Speed High fT. 0.127+0.10.80-0.1max Complementary to 2SB1216+ 0.11 Base2.3 0.60- 0.1+0.154 .60 -0.152 Collector3 Emitter Absolute Maximum Ratin

8.14. 2sd1815.pdf Size:228K _inchange_semiconductor

2SD1814
2SD1814

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SD1815DESCRIPTIONExcellent linearity of hFESmall and slim package making it easy to make 2SD1815/2SB1215-used set smallerLow collector-to-emitter saturation voltageHigh fTFast switching speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICAT

8.15. 2sd1816.pdf Size:228K _inchange_semiconductor

2SD1814
2SD1814

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SD1816DESCRIPTIONExcellent linearity of hFESmall and slim package facilitating compactness of setsLow collector-to-emitter saturation voltageHigh fTFast switching speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSRelay drivers,H

8.16. 2sd1817.pdf Size:215K _inchange_semiconductor

2SD1814
2SD1814

isc NPN Epitaxial Planar Silicon Transistor 2SD1817DESCRIPTIONHigh DC current gainCollector-Emitter Breakdown Voltage-: V = 60V(Min)(BR)CEOLow Collector Saturation Voltage-: V = 1.5V(Max) @I = 2.0ACE(sat) CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSRelay drivers,High speed inverters,converters and othergeneral

Otros transistores... 2SC619 , 2SC62 , 2SC620 , 2SC620M , 2SC621 , 2SC621A , 2SC621M , 2SC622 , 2N5401 , 2SC623 , 2SC624 , 2SC626 , 2SC627 , 2SC627F , 2SC628 , 2SC629 , 2SC63 .

 

 
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